公开(公告)号：US08852974B2

公开(公告)日：2014-10-07

申请号：US13707168

申请日：2012-12-06

Applicant: Epistar Corporation

Inventor： Chien-Fu Huang ,  Yi-Ming Chen ,  Yi-Tang Lai ,  Chia-Liang Hsu ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu

IPC: H01L21/00 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.

Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供包括表面的多层半导体膜; 使多层半导体膜的表面粗糙化，形成散射面; 在散射表面上重新生长半导体层; 并使所述半导体层变粗糙以在所述散射面上形成副散射部; 其中所述副散射部分在结构上小于所述散射表面。

公开(公告)号：US20130228802A1

公开(公告)日：2013-09-05

申请号：US13767217

申请日：2013-02-14

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Sian Wang ,  Chia-Liang Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai

IPC: H01L27/15

CPC classification number: H01L25/0753 ,  F21K9/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A two dimensional array light-emitting diode device is disclosed, which includes a transparent substrate including a first surface; a plurality of adjacent light-emitting diode units arranged on the first surface, wherein each of the light-emitting diode units including a plurality of sides and a circumference; and a plurality of conductive connecting structures arranged on the first surface, electrically connecting the plurality of light-emitting diode units mentioned above; wherein the sides of each of the light-emitting diode units have a plurality of vertical distances between the closest light-emitting diode units, and when the plurality of vertical distances larger than 50 μm, the sides are not near the closest light-emitting diode units; wherein the ratio of the total length of the sides not near the light-emitting diode units of each light-emitting diode unit and the circumference of the light-emitting diode unit is larger than 50%.

Abstract translation: 公开了一种二维阵列发光二极管装置，其包括：包括第一表面的透明基板; 布置在第一表面上的多个相邻的发光二极管单元，其中每个发光二极管单元包括多个边和圆周; 以及布置在所述第一表面上的多个导电连接结构，电连接上述多个发光二极管单元; 其中每个发光二极管单元的侧面在最近的发光二极管单元之间具有多个垂直距离，并且当多个垂直距离大于50um时，侧面不靠近最近的发光二极管 单位; 其中，各个发光二极管单元的发光二极管单元附近的边的总长度与发光二极管单元的周长之比大于50％。

公开(公告)号：US20230010081A1

公开(公告)日：2023-01-12

申请号：US17860749

申请日：2022-07-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Jun-Yi Li ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Yi-Ming Chen ,  Chang-Hsiu Wu ,  Wen-Luh Liao ,  Chen Ou ,  Wei-Wun Jheng

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/44 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

公开(公告)号：US11349047B2

公开(公告)日：2022-05-31

申请号：US17114012

申请日：2020-12-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US09825088B2

公开(公告)日：2017-11-21

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Yi-Ming Chen ,  Yu-Ren Peng ,  Chun-Yu Lin ,  Chun-Fu Tsai ,  Tzu-Chieh Hsu

IPC: H01L29/06 ,  H01L31/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

公开(公告)号：US09515225B2

公开(公告)日：2016-12-06

申请号：US14953876

申请日：2015-11-30

Applicant: Epistar Corporation

Inventor： Ching-Huai Ni ,  Chia-Liang Hsu ,  Yi-Ming Chen

IPC: H01L31/12 ,  H01L27/32 ,  H01L33/10 ,  H01L33/24 ,  H01L33/38 ,  H01L33/30 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016

Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.

Abstract translation: 本公开的实施例的发光器件包括衬底; 包括第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠，其中第一类型半导体层包括非平面粗糙表面; 形成在所述基板和所述半导体叠层之间的接合层; 以及多个凹部，每个凹部包括比所述非平面粗糙表面低的底面; 以及物理地埋置在第一类型半导体层中的多个埋置电极，其中多个埋入电极分别形成在多个凹槽中，并且多个埋入电极中的一个包括比第一类型半导体的非平面粗糙化表面高的上表面 层。

公开(公告)号：US09508894B2

公开(公告)日：2016-11-29

申请号：US14908886

申请日：2013-07-29

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

IPC: H01L33/62 ,  H01L33/00 ,  H01L21/683

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

公开(公告)号：US09461209B2

公开(公告)日：2016-10-04

申请号：US14853511

申请日：2015-09-14

Applicant: Epistar Corporation

Inventor： Min-Yen Tsai ,  Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Bo-Jiun Hu ,  Tzu-Yao Tseng ,  Jia-Kuen Wang ,  Kuan-Yi Lee ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/0012 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。

公开(公告)号：US20160284939A1

公开(公告)日：2016-09-29

申请号：US15176890

申请日：2016-06-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Yi-Ming Chen ,  Shih-Chang Lee ,  Yao-Ning Chan ,  Tzu-Chieh Hsu

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/30

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An optoelectronic device is provided. The optoelectronic device comprises: an optoelectronic system for emitting light; multiple contact regions on the optoelectronic system and separated from one another; and multiple fingers on the optoelectronic system and opposite to the multiple contact regions; wherein a first contact region in the multiple contact regions is between two adjacent fingers, and a first distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a second distance between the two adjacent fingers.

Abstract translation: 提供了一种光电器件。 光电子器件包括：用于发光的光电子系统; 光电子系统上的多个接触区域并且彼此分离; 和多个手指在光电子系统上并且与多个接触区域相对; 其中所述多个接触区域中的第一接触区域位于两个相邻的指状物之间，并且所述第一接触区域和所述相邻指状物之一之间的第一距离在所述两个相邻指状物之间的第二距离的5％至50％之间。

公开(公告)号：US09293634B2

公开(公告)日：2016-03-22

申请号：US14328020

申请日：2014-07-10

Applicant: Epistar Corporation

Inventor： Hsin-Ying Wang ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Chi-Hsing Chen ,  Hsiang-Ling Chang

IPC: H01L27/00 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42 ,  H01L27/15 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14636 ,  H01L27/156 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/42

Abstract: A semiconductor optoelectronic device comprises an operating substrate; a semiconductor epitaxial stack unit disposed on the operating substrate comprising a first semiconductor material layer having a first electrical conductivity disposed on the operating substrate and a second semiconductor material layer having a second electrical conductivity disposed on the first semiconductor material layer; a transparent conductive layer disposed on the second semiconductor material layer, wherein the transparent conductive layer comprises a first surface, a directly contacting part disposed on the first surface and directly contacting with the second semiconductor material layer, a second surface substantially parallel with the first surface, and a directly contacting corresponding part disposed on the second surface corresponding to the directly contacting part; and a first electrode disposed on the operating substrate and electrically connected with the semiconductor epitaxial stack by the transparent conductive layer, wherein the first electrode is connected with the transparent conductive layer by an area excluding the directly contacting part and the directly contacting corresponding part.

Abstract translation: 半导体光电子器件包括操作衬底; 设置在所述操作基板上的半导体外延堆叠单元，包括设置在所述操作基板上的具有第一导电性的第一半导体材料层和设置在所述第一半导体材料层上的具有第二导电性的第二半导体材料层; 设置在所述第二半导体材料层上的透明导电层，其中所述透明导电层包括第一表面，设置在所述第一表面上并与所述第二半导体材料层直接接触的直接接触部分，所述第二表面基本上平行于所述第一表面 以及设置在与直接接触部分相对应的第二表面上的直接接触的对应部件; 以及第一电极，其设置在所述操作基板上并且通过所述透明导电层与所述半导体外延层电连接，其中所述第一电极通过除了直接接触部分和直接接触的对应部分之外的区域与所述透明导电层连接。