Abstract:
Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
Abstract:
Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &Dgr;SP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. &Dgr;SP=SPF−SPI (1)
Abstract:
PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in an exposure latitude (EL) and line width roughness (LWR) and excellent in release property of a space pattern on a stepped substrate, which is particularly suitable for a method of forming a negative pattern by organic solvent development, and more particularly, which is suitable for KrF exposure, and to provide a pattern forming method, a resist film, a method for manufacturing an electronic device, and an electronic device using the above composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises a resin (A) which includes an aromatic group and (i) a repeating unit having a group that is decomposed by an action of an acid to generate a polar group, and which may include (ii) a repeating unit having a polar group other than a phenolic hydroxyl group. The total of the repeating units (i) and (ii) is 51 mol% or more with respect to the whole repeating units in the resin (A).
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method giving excellent exposure latitude, line width roughness and focus margin and hardly causing pattern collapse, and to provide an actinic ray-sensitive or radiation-sensitive resin composition to be used for the method.SOLUTION: The pattern forming method comprises steps of: forming a film comprising an actinic ray-sensitive or radiation-sensitive resin composition, which comprises a resin (A) having a repeating unit expressed by general formula (I) and a compound (B) that generates an acid by irradiation with actinic rays or radiation; irradiating the film with actinic rays or radiation; and developing the film by using a developing solution containing an organic solvent to form a negative pattern.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern formation method which is excellent in sensitivity, capability of reducing development defects, and pattern shape in negative pattern formation with a developer containing an organic solvent, and to provide a chemical amplification type resist composition and resist film.SOLUTION: A pattern formation method includes the steps of: (i) forming a film from a chemical amplification type resist composition which contains (A) a resin of which solubility in developer containing an organic solvent reduces due to increased polarity by an action of acid, (B) a compound which generates an acid upon exposure to actinic rays or radiation, and (C) a tertiary alcohol; (ii) exposing the film; and (iii) developing with the developer containing an organic solvent.
Abstract:
PROBLEM TO BE SOLVED: To provide a pattern forming method for forming a pattern having a small number of development defects, and to provide a resist composition.SOLUTION: The pattern forming method includes (A) forming a film using the resist composition, (B) exposing the film, and (C) developing the exposed film using developing solution containing an organic solvent. The resist composition contains resin containing a repeating unit having a group that is decomposed by action of acid to generate an alcoholic hydroxy group, and a solvent containing at least one of the following component (S1) and component (S2). The component (S1) is propylene glycol monochrome alkyl ether carboxylate. The component (S2) is at least one selected from a group including propylene glycol monochrome alkyl ether, lactate, acetic acid ester, alkoxy propionic acid ester, chain ketone, cyclic ketone, lactone, and alkylene carbonate.