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公开(公告)号：SG60131A1
公开(公告)日：1999-02-22
申请号：SG1997003800
申请日：1997-10-20
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , CHAINER TIMOTHY JOSEPH , ETZOLD KARL-FRIEDRICH , SCHRECK ERHARD THEORDOR
IPC: G01B21/08 , G01K15/00 , G01N25/72 , G11B5/00 , G11B5/012 , G11B5/455 , G11B5/48 , G11B5/58 , G01N25/70
Abstract: Apparatus and methods for calibrating a thermal proximity sensor are disclosed. Thermal responses from a thermal proximity sensor are used to sense the instantaneous distance between the sensor and a medium over which the sensor is moved, in a data storage system. Sensing the instantaneous distance results in detection of topographical variations on the medium. Calibration techniques for the sensor are disclosed herein and involve, in one aspect, using primarily electrical measurements to calibrate the sensor; and in another aspect, varying the distance between the sensor and the medium, obtaining actual thermal responses from the sensor, and using the actual responses (via direct comparison or curve fitting) to calibrate the sensor. In one embodiment, the sensor is a magnetoresistive access element used to access data on the medium.
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公开(公告)号：CA2481583C
公开(公告)日：2007-01-02
申请号：CA2481583
申请日：2002-11-15
Applicant: IBM
Inventor： TROUILLOUD PHILIP LOUIS , ABRAHAM DAVID WILLIAM
IPC: G11C11/15 , G11C11/18 , G11C7/02 , G11C7/04 , G11C11/00 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：DE69307833D1
公开(公告)日：1997-03-13
申请号：DE69307833
申请日：1993-11-03
Applicant: IBM
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公开(公告)号：AT148558T
公开(公告)日：1997-02-15
申请号：AT93308790
申请日：1993-11-03
Applicant: IBM
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公开(公告)号：DE112014001247T5
公开(公告)日：2016-01-21
申请号：DE112014001247
申请日：2014-01-21
Applicant: IBM
Inventor： GAMBETTA JAY , CHOW JERRY , CORCOLES ANTONIO , ABRAHAM DAVID WILLIAM
IPC: H03K19/19
Abstract: Ein System, ein Verfahren und ein Chip zum Steuern von Purcell-Verlust werden beschrieben. Der Chip enthält auf einer ersten Oberfläche des Substrats ausgebildete Qubits. Das Verfahren beinhaltet ein Ermitteln von Frequenzen der Qubits und Steuern einer Trennung zwischen den Frequenzen der Qubits und den Chipmodenfrequenzen des Chips.
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Patent Agency Ranking
公开(公告)号：GB2526477A
公开(公告)日：2015-11-25
申请号：GB201515685
申请日：2014-01-21
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , GAMBETTA JAY , CHOW JERRY , CORCOLES ANTONIO
IPC: G06N99/00
Abstract: A system, method, and chip to control Purcell loss are described. The chip includes qubits formed on a first surface of a substrate. The method includes determining frequencies of the qubits, and controlling a separation between the frequencies of the qubits and chip mode frequencies of the chip.
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公开(公告)号：CA2757477A1
公开(公告)日：2010-12-29
申请号：CA2757477
申请日：2010-04-12
Applicant: IBM
IPC: G11C11/00
Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.
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公开(公告)号：DE69923244T2
公开(公告)日：2006-01-12
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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公开(公告)号：DE69903206D1
公开(公告)日：2002-11-07
申请号：DE69903206
申请日：1999-01-20
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
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公开(公告)号：CA2107048C
公开(公告)日：1998-08-11
申请号：CA2107048
申请日：1993-09-27
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , HAMMOND JAMES MICHEAL , KLOS MARTIN ALLEN , ROESSLER KENNETH GILBERT , STOWELL ROBERT MARSHALL , WICKRAMASINGHE HEMANTHA KUMAR
Abstract: A sample carriage, for receiving a sample to be scanned and positionable in a scanning probe microscope, is used for physically decoupling the sample from the scanning probe microscope assembly. The sample carriage, constructed from low thermal coefficient material, is physically decoupled by releasably clamping a sample carriage to a bridge support.
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