公开(公告)号：DE3669016D1

公开(公告)日：1990-03-15

申请号：DE3669016

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：SG43376A1

公开(公告)日：1997-10-17

申请号：SG1996010140

申请日：1996-06-24

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  DEBROSSE JOHN KENNETH ,  WONG HING

IPC: H01L21/8242 ,  H01L27/108 ,  H01L21/768 ,  H01L27/00

Abstract: An improved method for isolating electrical conductors which are positioned over each other is disclosed. These conductors would normally contact each other because of the somewhat imprecise patterning and etching steps used to fabricate a multitude of conductive elements, e.g., in a very dense semiconductor structure. The method involves forming a recess in the upper surface of the lower conductor, and then at least partially filling the recess with an oxide-type material. This method is particularly valuable in the construction of stacked capacitor cells. Cells prepared using this technique also form part of this invention.

公开(公告)号：DE69114759D1

公开(公告)日：1996-01-04

申请号：DE69114759

申请日：1991-04-13

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  PREVITI-KELLY ROSEMARY ANN ,  RYAN JAMES GARDNER

IPC: C08L79/08 ,  H01L21/312 ,  H01L21/768 ,  H01L23/528 ,  H01L23/485

公开(公告)号：DE69114346D1

公开(公告)日：1995-12-14

申请号：DE69114346

申请日：1991-04-13

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  PREVITI-KELLY ROSEMARY ANN ,  RYAN JAMES GARDNER ,  LEE PEI-ING PAUL ,  YOON JUNG HOON

IPC: C08G73/10 ,  G03F7/038 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H05K3/00 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L23/485

公开(公告)号：DE68917695T2

公开(公告)日：1995-03-30

申请号：DE68917695

申请日：1989-11-03

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  LEACH MICHAEL ALBERT

IPC: H05K3/40 ,  H01L21/3205 ,  H01L21/48 ,  H01L21/768 ,  H01L27/00 ,  H05K3/00 ,  H05K3/06 ,  H05K3/10 ,  H05K3/46

公开(公告)号：DE68917695D1

公开(公告)日：1994-09-29

申请号：DE68917695

申请日：1989-11-03

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  KAANTA CARTER WELLING ,  LEACH MICHAEL ALBERT

IPC: H05K3/40 ,  H01L21/3205 ,  H01L21/48 ,  H01L21/768 ,  H01L27/00 ,  H05K3/00 ,  H05K3/06 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

公开(公告)号：DE3872579D1

公开(公告)日：1992-08-13

申请号：DE3872579

申请日：1988-04-08

Applicant: IBM

Inventor： CRONIN JOHN EDWARD ,  LEE PEI-ING PAUL

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/90 ,  H01L23/52

公开(公告)号：DE3871457D1

公开(公告)日：1992-07-02

申请号：DE3871457

申请日：1988-07-12

Applicant: IBM

Inventor： ABERNATHEY JOHN ROBERT ,  CRONIN JOHN EDWARD ,  LASKY JEROME BRETT

IPC: H01L29/78 ,  H01L21/225 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L21/90

公开(公告)号：BR8604547A

公开(公告)日：1987-05-26

申请号：BR8604547

申请日：1986-09-23

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/88 ,  H01L27/04

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.