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    11.
    发明专利
    未知

    公开(公告)号：DE602005005302T2

    公开(公告)日：2009-03-12

    申请号：DE602005005302

    申请日：2005-01-13

    Applicant: IBM

    Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV ,  MITCHELL PETER ,  NESBIT LARRY ALAN

    IPC: H01L51/30 ,  H01L21/78 ,  H01L27/28

    Abstract: Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.

    12.
    发明专利
    未知

    公开(公告)号：DE602005005302D1

    公开(公告)日：2008-04-24

    申请号：DE602005005302

    申请日：2005-01-13

    Applicant: IBM

    Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK CHARLES ,  HOLMES STEVEN JOHN ,  HORAK DAVID VACLAV ,  MITCHELL PETER ,  NESBIT LARRY ALAN

    IPC: H01L51/30 ,  H01L21/78 ,  H01L27/28

    Abstract: Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.

    14.
    发明专利
    未知

    公开(公告)号：DE3585047D1

    公开(公告)日：1992-02-13

    申请号：DE3585047

    申请日：1985-04-17

    Applicant: IBM

    Inventor： BADAMI DINESH ARVINDLAL ,  HAKEY MARK CHARLES ,  MORITZ HOLGER

    IPC: H01L21/027 ,  G03F7/039 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/30 ,  H01L21/00 ,  H01L21/308

    Abstract: A optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fragile photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate (10). The photoresist is exposed through a photomask (30) to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas (24) between the exposed (22) and unexposed areas (26) formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100 DEG C for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas (24) react, freezing the solubility of the partially exposed areas (24) with respect to that of the unexposed areas (26). The photoresist is then blanket exposed and developed in a solvent, leaving the partially exposed areas (24) on the substrate. The resulting thin resist lines can be used to form narrow isolation trenches by coating the substrate with a quartz film and lifting off the resist lines.

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