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公开(公告)号：GB2505600A
公开(公告)日：2014-03-05
申请号：GB201321798
申请日：2012-03-14
Applicant: IBM
Inventor： JAHNES CHRISTOPHER V , STAMPER ANTHONY K
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes (105') in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.
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公开(公告)号：GB2368457A
公开(公告)日：2002-05-01
申请号：GB0108448
申请日：2001-04-03
Applicant: IBM
Inventor： DALTON TIMOTHY JOSEPH , JAHNES CHRISTOPHER V , LIU JOYCE C , PURUSHOTHAMAN SAMPATH
IPC: H01L21/28 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/52
Abstract: A permanent protective hardmask 40 protects the dielectric properties of a main bulk dielectric layer 30 having a desirably low dielectric constant in a semiconductor device from undesirable increases in the dielectric constant, undesirable increases in current leakage, and low device yield from surface scratching during subsequent processing steps. The protective hardmask 40 further includes a single layer 50 or dual layer 50,60 sacrificial hardmask particularly useful when interconnect structures such as via openings and/or lines are formed in the low dielectric material during the course of making the final product. The sacrificial hardmask layers 50,60 and the permanent hardmask layer 40 may be formed in a single step from a same precursor wherein process conditions are altered to provide films of differing dielectric constants. Most preferably, a dual damascene structure has a tri-layer hardmask comprising silicon carbide, PECVD silicon nitride, and PECVD silicon dioxide, respectively, formed over a bulk low dielectric constant interlevel dielectric prior to forming the interconnect structures in the interlevel dielectric. The protective hardmask 40 has a low dielectric constant k which may be the same or similar to that of the bulk dielectric layer 30.
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公开(公告)号：DE69029024D1
公开(公告)日：1996-12-05
申请号：DE69029024
申请日：1990-08-29
Applicant: IBM
Inventor： BASEMAN ROBERT J , JAHNES CHRISTOPHER V , KHANDROS IGOR Y , MIRZAMAANI SEYYED M , RUSSAK MICHAEL A
Abstract: A magnetic storage medium is composed of a non-wettable substrate (10) upon which a transient liquid metal layer (18) is deposited and maintained as a distribution of discontinuous liquid features. A magnetic film layer (14) is deposited on the transient liquid metal layer (18) resulting in a reaction of the liquid metal with the magnetic film. The topology of the magnetic film is controllable by adjusting the thickness of the transient liquid metal layer (18).
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公开(公告)号：DE102012223968A1
公开(公告)日：2013-07-04
申请号：DE102012223968
申请日：2012-12-20
Applicant: IBM
Inventor： JAHNES CHRISTOPHER V , STAMPER ANTHONY K
Abstract: Es werden Strukturen mit mikroelektromechanischem System (MEMS), Verfahren zur Herstellung und Designstrukturen offenbart. Das Verfahren beinhaltet das Bilden von wenigstens einer festen Elektrode auf einem Substrat. Das Verfahren beinhaltet des Weiteren das Bilden eines Arms eines mikroelektromechanischen Systems (MEMS) mit einer variierenden Breitenabmessung von einer Oberseite des MEMS-Arms aus gesehen über der wenigstens einen festen Elektrode.
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公开(公告)号：DE112010004190T8
公开(公告)日：2013-03-14
申请号：DE112010004190
申请日：2010-07-29
Applicant: IBM
Inventor： COTTE JOHN M , JAHNES CHRISTOPHER V , PENG HONGBO , ROSSNAGEL STEPHEN M
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Patent Agency Ranking
公开(公告)号：GB2488928A
公开(公告)日：2012-09-12
申请号：GB201209216
申请日：2010-07-29
Applicant: IBM
Inventor： COTTE JOHN M , JAHNES CHRISTOPHER V , PENG HONGBO , ROSSNAGEL STEPHEN M
Abstract: A filter includes a membrane having a plurality of nanochannels (14) formed therein. A first surface charge material (18) is deposited on an end portion of the nanochannels. The first surface charge material includes a surface charge to electrostatically influence ions in an electrolytic solution (20) such that the nanochannels reflect ions back into the electrolytic solution while passing a fluid of the electrolytic solution. Methods for making and using the filter are also provided.
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公开(公告)号：MY132894A
公开(公告)日：2007-10-31
申请号：MYPI9803399
申请日：1998-07-24
Applicant: IBM
Inventor： BABICH KATHERINA E , BRUNNER TIMOTHY ALLAN , CALLEGARI ALESSANDRO CESARE , GRILL ALFRED , JAHNES CHRISTOPHER V , PATEL VISHNUBHAI VITTHALBHAI
IPC: C01B31/00 , H01L21/3205 , C23C14/06 , G03F7/11 , H01L21/027
Abstract: DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.
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公开(公告)号：AU2002331725A1
公开(公告)日：2004-03-11
申请号：AU2002331725
申请日：2002-08-26
Applicant: IBM
Inventor： JAHNES CHRISTOPHER V , LUND JENNIFER L , SAENGER KATHERINE L , VOLANT RICHARD P
Abstract: A micro-electromechanical (MEM) RF switch provided with a deflectable membrane ( 60 ) activates a switch contact or plunger ( 40 ). The membrane incorporates interdigitated metal electrodes ( 70 ) which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane ( 60 ), and is used to mechanically displace the switch contact ( 30 ). An RF gap area ( 25 ) located within the cavity ( 250 ) is totally segregated from the gaps ( 71 ) between the interdigitated metal electrodes ( 70 ). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity ( 250 ); at least one conductive path ( 20 ) integral to a first surface bordering the cavity; a flexible membrane ( 60 ) parallel to the first surface bordering the cavity ( 250 ), the flexible membrane ( 60 ) having a plurality of actuating electrodes ( 70 ); and a plunger ( 40 ) attached to the flexible membrane ( 60 ) in a direction away from the actuating electrodes ( 70 ), the plunger ( 40 ) having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.
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公开(公告)号：DE102012223968B4
公开(公告)日：2021-09-23
申请号：DE102012223968
申请日：2012-12-20
Applicant: IBM
Inventor： JAHNES CHRISTOPHER V , STAMPER ANTHONY K
Abstract: Verfahren, das aufweist:- Bilden von wenigstens einer festen Elektrode (14) auf einem Substrat (10);- Bilden eines Arms (45) eines mikroelektromechanischen Systems (MEMS) mit einer von oben auf den MEMS-Arm (45) gesehen entlang der Länge des MEMS-Arms (45) variierenden Breitenabmessung über der wenigstens einen festen Elektrode (14);- Bilden von Aktuatorerhöhungen (22a) aus Isolatormaterial, die sich von einer Oberfläche des MEMS-Arms (45) in Richtung des Substrats (10) erstrecken,- wobei die Höhe der Aktuatorerhöhungen (22a) und der Abstand der Aktuatorerhöhungen (22a) voneinander entlang der Länge des MEMS-Arms (45) in Abhängigkeit von der Steifheit des MEMS-Arms (45) variieren.
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公开(公告)号：DE112012001816B4
公开(公告)日：2018-10-11
申请号：DE112012001816
申请日：2012-03-14
Applicant: IBM
Inventor： JAHNES CHRISTOPHER V , STAMPER ANTHONY K
Abstract: Verfahren zum Bilden einer MEMS-Struktur, aufweisend:Strukturieren einer Verdrahtungsschicht auf einem Substrat, um feste Aktuator-Elektroden und einen Kontaktpunkt zu bilden;Bilden eines Opfermaterials auf der Verdrahtungsschicht;Strukturieren des Opfermaterials mit einem Array von Gräben über der Verdrahtungsschicht, wobei die Gräben auf eine vorbestimmte Höhe und Breite dimensioniert sind;Füllen des Arrays von Gräben mit Material;Bilden eines MEMS-Balkens über dem gefüllten Array von Gräben und in Kontakt mit dem Material in dem Array von Gräben;Bilden von zusätzlichem Opfermaterial über dem MEMS-Balken;Bilden eines Deckels über dem zusätzlichen Opfermaterial über dem MEMS-Balken;Bilden mindestens eines Austreiblochs in dem Deckel; undAustreiben des Opfermaterials unter dem MEMS-Balken und des zusätzlichen Opfermaterials über dem MEMS-Balken derart, dass das Material in dem Array von Gräben von einer Unterseite des MEMS-Balkens frei hängt, um ein Array von Aktuator-Höckern mit der vorbestimmten Höhe und Breite zu bilden.
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