公开(公告)号：CA2159234A1

公开(公告)日：1996-04-21

申请号：CA2159234

申请日：1995-09-27

Applicant: IBM

Inventor： GRAHAM TERESITA O ,  KANG SUNG K ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH M ,  SARAF RAVI F

IPC: C08K9/02 ,  B22F1/00 ,  B22F1/02 ,  B22F7/08 ,  C08L101/00 ,  C09D5/24 ,  C09J9/02 ,  C09J11/00 ,  C09J11/02 ,  C09J11/04 ,  C09J101/02 ,  C09J183/08 ,  C09J191/00 ,  C09J197/00 ,  C09J201/00 ,  C23C24/08 ,  H01B1/00 ,  H01B1/22 ,  H01L21/60 ,  H01L23/498 ,  H01R4/04 ,  H05K1/18 ,  H05K3/32 ,  B23K35/26 ,  H01B5/00 ,  B23K1/00

Abstract: A structure and method of fabrication are described. The structure is a combination of a polymeric material and particles, e.g. Cu, having an electrically conductive coating, e.g. Sn. Heat is applied to fuse the coating of adjacent particles. The polymeric material is a thermoplastic. The structure is disposed between two electrically conductive surfaces, e.g. chip and substrate pads, to provide electrical interconnection and adhesion between their pads.

公开(公告)号：CA2024012A1

公开(公告)日：1991-02-26

申请号：CA2024012

申请日：1990-08-24

Applicant: IBM

Inventor： KANG SUNG K ,  PALMER MICHAEL J ,  REILEY TIMOTHY C ,  TOPA ROBERT D

IPC: B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/60 ,  H01L21/603

Abstract: A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

公开(公告)号：CA2475491C

公开(公告)日：2012-03-27

申请号：CA2475491

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  C22C13/00 ,  B23K35/26 ,  B23K101/42 ,  H01L21/60 ,  H01L23/12 ,  H01L23/488 ,  H05K3/34

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90 %. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates (57, 58) is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling .delta.T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0 % or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate (57, 58) formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5 %.

公开(公告)号：AU2003209129A8

公开(公告)日：2003-09-09

申请号：AU2003209129

申请日：2003-02-11

Applicant: IBM

Inventor： KANG SUNG K ,  GOSSELIN TIMOTHY A ,  CHOI WON K ,  PUTTLITZ KARL SR ,  HENDERSON DONALD W ,  GOLDSMITH CHARLES C ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

公开(公告)号：AU2003209129A1

公开(公告)日：2003-09-09

申请号：AU2003209129

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.

公开(公告)号：SG77619A1

公开(公告)日：2001-01-16

申请号：SG1997004678

申请日：1995-08-21

Applicant: IBM

Inventor： KANG SUNG K ,  GRAHAM TERESITA O ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH MARIE ,  SARAF RAVI F

IPC: C08K9/02 ,  B22F1/00 ,  B22F1/02 ,  B22F7/08 ,  C08L101/00 ,  C09D5/24 ,  C09J9/02 ,  C09J11/00 ,  C09J11/02 ,  C09J11/04 ,  C09J101/02 ,  C09J183/08 ,  C09J191/00 ,  C09J197/00 ,  C09J201/00 ,  C23C24/08 ,  H01B1/00 ,  H01B1/22 ,  H01L21/60 ,  H01L23/498 ,  H01R4/04 ,  H05K1/18 ,  H05K3/32

Abstract: A structure and method of fabrication are described. The structure is a combination of a polymeric material (36) and particles (32), e.g. Cu, having an electrically conductive coating (34), e.g. Sn. Heat is applied to fuse the coating of adjacent particles. The polymeric material (36) is a thermoplastic. The structure is disposed between two electrically conductive surfaces (40,42), e.g. chip and substrate pads, to provide electrical interconnection and adhesion between their pads.