公开(公告)号：EP1483419A4

公开(公告)日：2005-07-06

申请号：EP03707862

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL J SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  C22C1/00

CPC classification number: C22C13/00 ,  B23K35/262 ,  B23K2201/36 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  H01L2924/00

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90 %. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates (57, 58) is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling δT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0 % or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate (57, 58) formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5 %.

公开(公告)号：JP2002151170A

公开(公告)日：2002-05-24

申请号：JP2001210998

申请日：2001-07-11

Applicant: IBM

Inventor： GRAHAM TERESITA O ,  KANG SUNG K ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH MARIE ,  SARAF RAVI F

IPC: C08K9/02 ,  B22F1/00 ,  B22F1/02 ,  B22F7/08 ,  C08L101/00 ,  C09D5/24 ,  C09J9/02 ,  C09J11/00 ,  C09J11/02 ,  C09J11/04 ,  C09J101/02 ,  C09J183/08 ,  C09J191/00 ,  C09J197/00 ,  C09J201/00 ,  C23C24/08 ,  H01B1/00 ,  H01B1/22 ,  H01L21/60 ,  H01L23/498 ,  H01R4/04 ,  H05K1/18 ,  H05K3/32

Abstract: PROBLEM TO BE SOLVED: To provide conductive paste material safe for the environment and manufacturable at a low cost. SOLUTION: The paste material is made from a polymeride material and particles of Cu, etc., having conductive coatings, for example Sn coating. Coupling is established by melting the coatings of adjoining particles with heat. The polymeride material should be of thermoplastic type and is applied to two surfaces having electric conductivity, for example between a chip and the pad of a substrate so that electric connection and adhesion between the pads are established.

公开(公告)号：MY128248A

公开(公告)日：2007-01-31

申请号：MYPI20030490

申请日：2003-02-13

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K101/42 ,  B23K35/26 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34

Abstract: A SOLDER COMPOSITION AND ASSOCIATED METHOD OF FORMATION. THE SOLDER COMPOSITION COMPRISES A SUBSTANTIALLY LEAD-FREE ALLOY THAT INCLUDES TIN (Sn), SILVER (Ag), AND COPPER. THE TIN HAS A WEIGHT PERCENT CONCENTRATION IN THE ALLOY OF AT LEAST ABOUT 90% THE SILVER HAS A WEIGHT PERCENT CONCENTRATION X IN THE ALLOY. X IS SUFFICIENTLY SMALL THAT FORMATION OF Ag3Sn PLATES IS SUBSTANTIALLY SUPPRESSED WHEN THE ALLOY INA LIQUEFIED STATE IS BEING SOLIDIFIED BY BEING COOLED TO A LOWER TEMPERATURE AT WHICH THE SOLID Sn PHASE IS NUCLEATED. THIS LOWER TEMPERATURE CORRESPONDS TO AN UNDERCOOLING oT RELATIVE TO THE EUTECTIC MELTING TEMPERATURE OF THE ALLOY. ALTERNATIVELY, X MAY BE ABOUT 4.0% OR LESS , WHEREIN THE LIQUIFIED ALLOY IS COOLED AT A COOLING RATE THAT IS HIGH ENOUGH TO SUBSTANTIALLY SUPPRESS Ag3Sn PLATE FORMATION IN THE ALLOY. THE COPPER HAS A WEIGHT PERCENT CONCENTRATION IN THE ALLOY NOT EXCEEDING ABOUT 1.5%.(FIG 16)

公开(公告)号：CA2475491A1

公开(公告)日：2003-08-28

申请号：CA2475491

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  PUTTLITZ KARL SR ,  SHIH DA-YUAN

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn) , silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90 %. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates (57, 58 ) is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phas e is nucleated. This lower temperature corresponds to an undercooling .delta.T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0 % or less, wherein the liquefied alloy is cooled at a cooli ng rate that is high enough to substantially suppress Ag3Sn plate (57, 58) formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5 %.

公开(公告)号：SG33468A1

公开(公告)日：1996-10-18

申请号：SG1995001167

申请日：1995-08-21

Applicant: IBM

Inventor： KANG SUNG K ,  GRAHAM TERESITA O ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH MARIE ,  SARAF RAVI F

IPC: H01R4/02 ,  H05K3/34 ,  H05K3/42

公开(公告)号：MY118121A

公开(公告)日：2004-09-30

申请号：MYPI9502913

申请日：1995-09-29

Applicant: IBM

Inventor： KANG SUNG K ,  GRAHAM TERESITA O ,  PURUSHOTHAMAN SAMPATH ,  ROLDAN JUDITH MARIE ,  SARAF RAVI F

IPC: C08K9/02 ,  H05K3/32 ,  B22F1/00 ,  B22F1/02 ,  B22F7/08 ,  C08L101/00 ,  C09D5/24 ,  C09J9/02 ,  C09J11/00 ,  C09J11/02 ,  C09J11/04 ,  C09J101/02 ,  C09J183/08 ,  C09J191/00 ,  C09J197/00 ,  C09J201/00 ,  C23C24/08 ,  H01B1/00 ,  H01B1/22 ,  H01L21/60 ,  H01L23/498 ,  H01R4/04 ,  H05K1/18

Abstract: A STRUCTURE AND METHOD OF FABRICATION ARE DESCRIBED. THE STRUCTURE (30) IS A COMBINATION OF A POLYMERIC MATERIAL (36) AND PARTICLES (32), E.G. CU, HAYING AN ELECTRICALLY CONDUCTIYE COATING (34), E.G. SN. HEAT IS APPLIED TO FUSE THE COATING OF ADJACENT PARTICLES. THE POLYMERIC MATERIAL IS A THERMOPLASTIC. THE STRUCTURE IS DISPOSED BETWEEN TWO ELECTRICALLY CONDUCTIYE SURFACES (40, 42), E.G. CHIP AND SUBSTRATE PADS, TO PROYIDE ELECTRICAL INTERCONNECTION AND ADHESION BETWEEN THEIR PADS. (FIGURE 3)

公开(公告)号：CA2089791C

公开(公告)日：1998-11-24

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  MARINO JEFFREY R ,  FARRELL CURTIS E ,  KANG SUNG K ,  PURUSHOTHAMAN SAMPATH ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used as a surface of conductors i n electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these s urfaces. These materials are used as a surface coating for lead frames for packaging inte grated circuit chips. These materials can be decal transferred onto conductor surfaces or elect rolessly or electrolytically disposed thereon.

公开(公告)号：BR9301497A

公开(公告)日：1993-10-26

申请号：BR9301497

申请日：1993-04-12

Applicant: IBM

Inventor： BRADY MICHAEL J ,  FARREL CURTIS E ,  KANG SUNG K ,  MARINO JEFFREY R ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  TOOLE TERRENCE R O ,  PURUSHOTHAMAN SAMPATH ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532 ,  H01L21/40

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

公开(公告)号：CA2089791A1

公开(公告)日：1993-10-25

申请号：CA2089791

申请日：1993-02-18

Applicant: IBM

Inventor： BRADY MICHAEL J ,  FARRELL CURTIS E ,  KANG SUNG K ,  MARINO JEFFREY R ,  MIKALSEN DONALD J ,  MOSKOWITZ PAUL A ,  O'SULLIVAN EUGENE J ,  O'TOOLE TERRENCE R ,  PURUSHOTHAMAN SAMPATH ,  RIELEY SHELDON C ,  WALKER GEORGE F

IPC: H01L21/60 ,  C23C18/50 ,  C25D3/54 ,  H01L21/288 ,  H01L21/603 ,  H01L21/768 ,  H01L23/495 ,  H01L23/498 ,  H01L23/532

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

公开(公告)号：BR0307719A

公开(公告)日：2005-04-26

申请号：BR0307719

申请日：2003-02-11

Applicant: IBM

Inventor： CHOI WON K ,  GOLDSMITH CHARLES C ,  GOSSELIN TIMOTHY A ,  HENDERSON DONALD W ,  KANG SUNG K ,  SHIH DA-YUAN ,  PUTTLITZ KARL SR

IPC: B23K1/00 ,  B23K35/26 ,  B23K101/42 ,  C22C13/00 ,  H01L21/60 ,  H01L23/12 ,  H05K3/34 ,  H01L23/488

Abstract: A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag3Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling deltaT relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4.0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag3Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1.5%.