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公开(公告)号:DE69025299T2
公开(公告)日:1996-08-08
申请号:DE69025299
申请日:1990-11-30
Applicant: IBM
Inventor: ELLIS WAYNE F , KLINK ERICH , NAJMANN KUNT
IPC: G11C11/401 , G11C7/22 , G11C8/18 , G11C7/00 , G11C8/00
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公开(公告)号:DE68916784D1
公开(公告)日:1994-08-18
申请号:DE68916784
申请日:1989-04-20
Applicant: IBM
Inventor: SCHETTLER HELMUT DIPL ING , LUDWIG THOMAS DIPL ING , WAGNER OTTO M DIPL-ING , HAUG WERNER O DIPL ING , KLINK ERICH , KROELL KARL E DIPL-PHYS , STAHL RAINER DIPL ING
Abstract: Integrated circuit package comprising at least one active integrated circuit chip (1) mounted and electrically connected to a power supply distribution wiring and a chip interconnection and signal wiring both formed on the topsurface of a passive semiconductor interconnection carrier (2) in which a power supply decoupling capacitor is implemented. Spaced wells (4) of a first conductivity type are provided in the surface of said carrier of a second conductivity type. The power supply distribution wiring comprises first and second conductive lines (5, 6) within a first wiring level (WL1). Said first conductive lines (5) are deposited on the surface areas of said wells (4) in an ohmic contact relationship and said second conductive lines (6) are deposited on the surface areas of said carrier (2) between said wells (4) in an ohmic contact relationship. Said first and second conductive lines are connected to first and second terminals of the power supply, respectively, so that the junction capacitance between said wells (4) and the carrier material (2) embedding said wells forms said decoupling capacitor.
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公开(公告)号:IT8022604D0
公开(公告)日:1980-06-06
申请号:IT2260480
申请日:1980-06-06
Applicant: IBM
Inventor: HEIMEIER HELMUT H , KLEIN WIELFRIED , KLINK ERICH , WERNICKE FRIEDRICH C
IPC: G11C11/41 , G11C7/00 , G11C11/24 , G11C11/40 , G11C11/402 , G11C11/411 , G11C11/414 , G11C11/416 , G11C
Abstract: Semiconductor storage in which the current necessary for reading and/or writing the storage cells is generated simply by discharging input capacitances of the non-selected storage cells and is fed directly to the selected storage cells for reading and/or writing.
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公开(公告)号:DE602007006347D1
公开(公告)日:2010-06-17
申请号:DE602007006347
申请日:2007-11-20
Applicant: IBM
Inventor: FRECH ROLAND , KLINK ERICH , SAALMUELLER JUERGEN
IPC: G01R31/28 , G01R31/02 , G01R31/3185 , H04B3/46 , H04M3/34
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公开(公告)号:AT467132T
公开(公告)日:2010-05-15
申请号:AT07847223
申请日:2007-11-20
Applicant: IBM
Inventor: FRECH ROLAND , KLINK ERICH , SAALMUELLER JUERGEN
IPC: G01R31/28 , G01R31/02 , G01R31/3185 , H04B3/46 , H04M3/34
Abstract: A method for determining current return path integrity in an electric device with a plurality of signal lines and supply lines. A library with at least one reference signal pattern of a near end crosstalk signal on a defined signal line arising from an input signal on another defined signal line is provided, a predetermined signal to a selected signal line of the electric device is applied, the near end crosstalk signal on at least one further signal line of the electric device is detected, said near end crosstalk signal is compared with the corresponding reference signal pattern from the library, and if there is a deviation between the near end crosstalk signal and the corresponding reference signal pattern, an information that there is any defect in the electric device is displayed.
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公开(公告)号:DE60037961T2
公开(公告)日:2009-01-29
申请号:DE60037961
申请日:2000-12-05
Applicant: IBM
Inventor: FRECH ROLAND DR , KLINK ERICH , REHM SIMONE , VIRAG HELMUT , WINKEL THOMAS-MICHAEL DR , CHAMBERLIN BRUCE , BECKER WIREN DALE , MA WAI MON
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公开(公告)号:DE68916784T2
公开(公告)日:1995-01-05
申请号:DE68916784
申请日:1989-04-20
Applicant: IBM
Inventor: SCHETTLER HELMUT DIPL ING , LUDWIG THOMAS DIPL ING , WAGNER OTTO M DIPL-ING , HAUG WERNER O DIPL ING , KLINK ERICH , KROELL KARL E DIPL-PHYS , STAHL RAINER DIPL ING
Abstract: Integrated circuit package comprising at least one active integrated circuit chip (1) mounted and electrically connected to a power supply distribution wiring and a chip interconnection and signal wiring both formed on the topsurface of a passive semiconductor interconnection carrier (2) in which a power supply decoupling capacitor is implemented. Spaced wells (4) of a first conductivity type are provided in the surface of said carrier of a second conductivity type. The power supply distribution wiring comprises first and second conductive lines (5, 6) within a first wiring level (WL1). Said first conductive lines (5) are deposited on the surface areas of said wells (4) in an ohmic contact relationship and said second conductive lines (6) are deposited on the surface areas of said carrier (2) between said wells (4) in an ohmic contact relationship. Said first and second conductive lines are connected to first and second terminals of the power supply, respectively, so that the junction capacitance between said wells (4) and the carrier material (2) embedding said wells forms said decoupling capacitor.
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公开(公告)号:IT1174672B
公开(公告)日:1987-07-01
申请号:IT2260480
申请日:1980-06-06
Applicant: IBM
Inventor: HEIMEIER HELMUT H , KLEIN WIELFRIED , KLINK ERICH , WERNICKE FRIEDRICH C
IPC: G11C11/41 , G11C7/00 , G11C11/24 , G11C11/40 , G11C11/402 , G11C11/411 , G11C11/414 , G11C11/416 , G11C
Abstract: Semiconductor storage in which the current necessary for reading and/or writing the storage cells is generated simply by discharging input capacitances of the non-selected storage cells and is fed directly to the selected storage cells for reading and/or writing.
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公开(公告)号:BR8404041A
公开(公告)日:1985-09-03
申请号:BR8404041
申请日:1984-08-13
Applicant: IBM
Inventor: BROSCH RUDOLF , KEINERT JOACHIM , KLINK ERICH , WERNICKE FRIEDRICH C
Abstract: A phase splitter with latch comprises a true complement generator in the form of a current switch (T1, T2, T3, R3) which supplies two complementary output signals in response to an input signal (VIN). The outputs of this true complement generator are in each case connected to an associated emitter follower (T4, T5). The two emitter followers (T4, T5) have identical emitter resistors (R6, R7) which simultaneously serve as collector load resistors of two cross-coupled transistors (T6, T7) also comprise identical but higher emitter resistors (R13, R14) than the emitter followers (T6, T7). The emitters of the cross-coupled transistors (T6, T7) are each connected to one of the two inputs of an output stage (T8, T9, T11) consisting of a current switch. This current switch is connected to operating voltage (VEE) through a clock-controlled transitor (T11). Upon actuation of the output stage, i.e., when transistor (T11) is on, the active emitter resistance of one of the cross-coupled transistors (T6, T7) is pulled below the value of the emitter resistors (R6, R7) of the emitter followers (T4, T5), thus causing the latch circuit to be latched as a function of the input signal.
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20.
公开(公告)号:DE3068118D1
公开(公告)日:1984-07-12
申请号:DE3068118
申请日:1980-09-15
Applicant: IBM
Inventor: HEUBER KLAUS , KLINK ERICH , RUDOLPH VOLKER DR , WIEDMANN SIEGFRIED DR
IPC: G11C11/414 , G11C11/40 , G11C11/4063 , G11C11/413 , H01L21/822 , H01L21/8229 , H01L27/02 , H01L27/04 , H01L27/102
Abstract: Disclosed is a simulated storage cell structure for use as a reference voltage generator in a semiconductor store fabricated in Merged Transistor Logic (MTL) technology. The simulated storage cell structure includes n elongated regions of P-type diffusion arranged in parallel to each other in an N-type trough of semiconductor material. The elongated P-type regions are alternately designed as collector and Injector strips.
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