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公开(公告)号：IT1148819B
公开(公告)日：1986-12-03
申请号：IT2131780
申请日：1980-04-11
Applicant: IBM
IPC: C07D339/08 , C07D339/06 , C07D345/00 , C07D409/04 , C07D409/14 , C07D495/04 , C07F
Abstract: The invention is directed to novel heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs having the general formula Wherein X is selected from S, Se and Te. R is selected from hydrogen, alkyl, aryl, or together form a ring of carbon atoms, cyano and dithiocarbonate groups and R1 is selected from alkali, alkaline earth and transition metals, alkyl, aryl, cyclic and heterocyclic groups. A novel method for preparing these compounds is also provided.
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12.发明专利
公开(公告)号：DE3065582D1
公开(公告)日：1983-12-22
申请号：DE3065582
申请日：1980-04-10
Applicant: IBM
IPC: C07D339/06 , C07D339/08 , C07D345/00 , C07D409/04 , C07D409/14 , C07D495/04 , C07D343/00 , C07C161/00 , C07C163/00 , C07C165/00
Abstract: The invention is directed to novel heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs having the general formula Wherein X is selected from S, Se and Te. R is selected from hydrogen, alkyl, aryl, or together form a ring of carbon atoms, cyano and dithiocarbonate groups and R1 is selected from alkali, alkaline earth and transition metals, alkyl, aryl, cyclic and heterocyclic groups. A novel method for preparing these compounds is also provided.
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Patent Agency Ranking
公开(公告)号：SG137694A1
公开(公告)日：2007-12-28
申请号：SG2005049093
申请日：2001-10-25
Applicant: IBM
Inventor： GRILL ALFRED , MEDEIROS DAVID R , PATEL VISHNUBHAI VITTHALBHAI
IPC: H01L21/768 , C23C16/40 , H01L21/312 , H01L21/316 , H01L23/522 , H01L23/532 , H01L21/311
Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.
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公开(公告)号：MY132894A
公开(公告)日：2007-10-31
申请号：MYPI9803399
申请日：1998-07-24
Applicant: IBM
Inventor： BABICH KATHERINA E , BRUNNER TIMOTHY ALLAN , CALLEGARI ALESSANDRO CESARE , GRILL ALFRED , JAHNES CHRISTOPHER V , PATEL VISHNUBHAI VITTHALBHAI
IPC: C01B31/00 , H01L21/3205 , C23C14/06 , G03F7/11 , H01L21/027
Abstract: DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.
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公开(公告)号：DE69214087T2
公开(公告)日：1997-04-03
申请号：DE69214087
申请日：1992-10-09
Applicant: IBM
Inventor： JASO MARK ANTHONY , JONES PAUL BRADLEY , MEYERSON BERNARD STEELE , PATEL VISHNUBHAI VITTHALBHAI
IPC: H01L21/304 , H01L21/306 , H01L21/3105 , H01L21/768 , H01L21/311
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