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    MICRO-ELECTROMECHANICAL SWITCH HAVING A DEFORMABLE ELASTOMERIC CONDUCTIVE ELEMENT
    11.
    发明公开
    MICRO-ELECTROMECHANICAL SWITCH HAVING A DEFORMABLE ELASTOMERIC CONDUCTIVE ELEMENT 审中-公开
    微机电开关，可变形的弹性LEITFüHIGEN元

    公开(公告)号：EP1535296A4

    公开(公告)日：2007-04-04

    申请号：EP02746591

    申请日：2002-06-14

    Applicant: IBM

    Inventor： DELIGIANNI HARIKLIA ,  GREENBERG DAVID R ,  JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

    IPC: H01H57/00 ,  H01H59/00 ,  H01L21/00

    CPC classification number: H01H59/0009

    Abstract: A micro-electromechanical switch (MEMS) having a deformable elastomeric element (1) which exhibits a large change in conductivity with a small amount of displacement. The deformable elastomeric element (1) is displaced by an electrostatic force that is applied laterally resulting in a small transverse displacement. The transversal displacement, in turn, pushes a metallic contact (7) against two conductive paths (5, 6), allowing passage of electrical signals. The elastomer (1) is provided on two opposing sids with embedded metallic elements (9, 10), such as impregnated metallic rods, metallic sheets, metallic particles, or conductive paste. Actuation electrodes (18, 8) are placed parallel to the conductive sides of the elastomer. A voltage applied between the conductive side of the elastomer and the respective actuation electrodes (18, 8) generate the electrostatic attractive force that compresses the elastomer (1), creating the transverse displacement that closes the MEMS. The elastomeric based MEMS extends the lifetime of the switch by extending fatigue life of the deformable switch elements.

    COAXIAL THROUGH-SILICON VIA
    12.
    发明申请
    COAXIAL THROUGH-SILICON VIA 审中-公开
    同轴通过硅

    公开(公告)号：WO2011056374A3

    公开(公告)日：2011-07-28

    申请号：PCT/US2010052594

    申请日：2010-10-14

    Applicant: IBM ,  VOLANT RICHARD P ,  FAROOQ MUKTA G ,  FINDEIS PAUL F ,  PETRARCA KEVIN S

    Inventor： VOLANT RICHARD P ,  FAROOQ MUKTA G ,  FINDEIS PAUL F ,  PETRARCA KEVIN S

    IPC: H01L21/768

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate 40. The TSV structure is provided with two or more independent electrical conductors 50, 60 insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. A method of fabricating such a TSV structure is also described.

    Abstract translation: 在硅衬底40内形成独特的同轴或三轴互连的贯通硅通孔（TSV）结构.TSV结构设置有两个或更多个独立的电导体50,60，与其彼此绝缘并与衬底绝缘。 电导体可以连接到不同的电压或接地，使得可以将TSV结构作为同轴或三轴装置进行操作。 使用各种绝缘材料的多层可用作绝缘体，其中根据介电性能，填充性能，界面粘合性，CTE匹配等来选择层。 TSV结构克服了外绝缘层中可能导致泄漏的缺陷。 还描述了制造这种TSV结构的方法。

    MICRO-ELECTROMECHANICAL INDUCTIVE SWITCH
    13.
    发明申请
    MICRO-ELECTROMECHANICAL INDUCTIVE SWITCH 审中-公开
    微机电感应开关

    公开(公告)号：WO2004078638A3

    公开(公告)日：2004-10-28

    申请号：PCT/US0334630

    申请日：2003-10-28

    Applicant: IBM

    Inventor： VOLANT RICHARD P ,  FLORKEY JOHN E ,  GROVES ROBERT A

    IPC: B81B3/00 ,  H01F7/06 ,  H01F7/14 ,  H01H59/00 ,  H03K17/965 ,  H01F21/04

    CPC classification number: H03K17/965 ,  H01F7/066 ,  H01F7/14 ,  H01F2007/068 ,  H01H59/0009

    Abstract: A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils (20, 30) on a moveable platform (15) and a second plurality of coils (40, 50) on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements or coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.

    Abstract translation: 描述了能够感应耦合和去耦电信号的微机电（MEM）开关。 电感式MEM开关包括在可移动平台（15）上的第一组多个线圈（20,30）和固定平台或基板上的第二组多个线圈（40,50），可移动平台上的线圈位于 低于固定基板的。 通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和去耦。 分别在可移动和固定基板上的不同布置或线圈允许多极和多位置切换配置。 所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。 本发明的MEMS开关可以使用标准CMOS技术制造。

    METHOD FOR FABRICATING MIM(METAL/INSULATOR/METAL) STRUCTURE USING ANODE OXIDATION PROCESS
    16.
    发明专利
    METHOD FOR FABRICATING MIM(METAL/INSULATOR/METAL) STRUCTURE USING ANODE OXIDATION PROCESS 审中-公开

    公开(公告)号：JP2002280458A

    公开(公告)日：2002-09-27

    申请号：JP2002002593

    申请日：2002-01-09

    Applicant: IBM

    Inventor： VOLANT RICHARD P ,  JOHN M COTTE ,  PETRARCA KEVIN S ,  STEIN KENNETH J

    IPC: H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822

    Abstract: PROBLEM TO BE SOLVED: To provide a process for fabricating a metal/insulator/metal capacitor(MIM cap) structure in a semiconductor substrate efficiently at low cost. SOLUTION: A metal oxide layer 18 is formed on a deposited underlying metal layer 16 using an anode oxidation procedure, a second metal 20 is deposited thereon and planarized by chemical mechanical polishing or other procedure to fabricate a metal/insulator/metal capacitor structure in a semiconductor substrate. This process is not a conventional etching process for forming a capacitor structure but an extra process. This process is applicable to the field of damascene structure and can be used for forming a variety of capacitor structures while decreasing the number of mask layers required for formation.

    ENCAPSULATING METAL STRUCTURE FOR SEMICONDUCTOR DEVICE AND MIM CAPACITOR INCLUDING THE SAME STRUCTURE
    17.
    发明专利
    ENCAPSULATING METAL STRUCTURE FOR SEMICONDUCTOR DEVICE AND MIM CAPACITOR INCLUDING THE SAME STRUCTURE 失效

    公开(公告)号：JP2002026018A

    公开(公告)日：2002-01-25

    申请号：JP2001127214

    申请日：2001-04-25

    Applicant: IBM

    Inventor： PETRARCA KEVIN S ,  DONALD CANAPERI ,  KERRISHIRNAN MAHADEVAJAY ,  KENNETH J STAIN ,  VOLANT RICHARD P

    IPC: H01L21/288 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal structure encapsulated in a feature formed in a substrate. SOLUTION: A side wall and bottom surface of a feature are covered with a barrier layer, and the feature is filled with metal preferably by electrolytical plating. A recess is made in the metal, an upper surface of the metal is covered to deposit an additional barrier layer contacted with a first barrier layer. The additional barrier layer is planarized preferably by chemical mechanical polishing. This method can be used to manufacture an MIM capacitor. In this case, the encapsulated metal structure functions as a lower plate of the capacitor. A second substrate layer is deposited on an upper surface of the substrate and an opening is made in an upper surface of the encapsulated metal structure. A dielectric layer is deposited on the opening to thereby cover the encapsulated metal structure at the bottom of the opening. An additional layer acting as the upper plate of the capacitor is deposited to cover the dielectric layer and fill the opening. The dielectric layer and additional layer are planarized preferably by the CMP method.

    SELECTIVE PLATING PROCESS
    18.
    发明专利
    SELECTIVE PLATING PROCESS 失效

    公开(公告)号：JP2002020891A

    公开(公告)日：2002-01-23

    申请号：JP2001127259

    申请日：2001-04-25

    Applicant: IBM

    Inventor： VOLANT RICHARD P ,  PETER S LOCKE ,  PETRARCA KEVIN S ,  DAVID M ROCKWELL ,  SESHADORI SUBANA

    IPC: C25D7/12 ,  C25D5/02 ,  C25D5/48 ,  H01L21/28 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

    Abstract: PROBLEM TO BE SOLVED: To provide an electric plating method of a metal structure in a feature formed in a substrate. SOLUTION: A liner material 22 is adhered to an upper surface of the substrate and a bottom surface and a side wall of the feature 21. Next, a seed layer 23 is adhered onto the liner by the CVD. The seed layer is selectively removed from the upper surface of the substrate so that the seed layer is left behind only on the bottom surface of the feature. The metal is electrically plated by using this part of the seed layer so that the metal fills the feature. The upper surface is not electrically plated because the seed layer is removed from the upper surface of the substrate.

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