公开(公告)号：CA1241111A

公开(公告)日：1988-08-23

申请号：CA503759

申请日：1986-03-11

Applicant: IBM

Inventor： JONES ROBERT E JR ,  LEE RODNEY E ,  YEH TSU-HSING

IPC: G11B5/31 ,  G11B5/17

Abstract: SA984-022 A thin film magnetic transducer having a magnetic circuit having nickel-iron layers which encloses a portion of first and second windings. The portions of each winding traversing the nickel-iron layers have conductor segments equal in number and separated from each other in parallel planes. The conductor segments of each winding have a center-to-center spacing different from the remaining winding selected to avoid contact with the transition regions of the nickel-iron layers and which results in a common inductance for each winding. The windings are joined at one end to form a center tapped winding.

公开(公告)号：FR2357065A1

公开(公告)日：1978-01-27

申请号：FR7717613

申请日：1977-06-02

Applicant: IBM

Inventor： BEYER KLAUS D ,  DAS GOBINDA ,  POPONIAK MICHAEL R ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：CA915830A

公开(公告)日：1972-11-28

申请号：CA915830D

Applicant: IBM

Inventor： YEH TSU-HSING ,  VIVA OSVALDO R ,  JOSHI MADHUKAR L ,  MASTERS BURTON J

IPC: H01L21/00 ,  H01L21/8222 ,  H01L29/167

公开(公告)号：DE1277827B

公开(公告)日：1968-09-19

申请号：DEJ0025547

申请日：1964-03-26

Applicant: IBM

Inventor： YEH TSU-HSING

IPC: C30B31/06 ,  H01L21/00 ,  H01L21/316 ,  H01L29/00

Abstract: 1,052,379. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. March 31, 1964 [March 28, 1963], No.13157/64. Heading H1K. N-type impurity is diffused into an intermetallic compound semi-conductor body through a thin film of material which prevents the formation of an undesired compound resulting from reaction between the impurity and the body, which compound would prevent satisfactory diffusion of the impurity. In one example, silicon monoxide is evaporated to form a layer 11 (Fig. 2) on a P-type gallium arsenide body and an N-type impurity such as sulphur. selenium or tellurium is then diffused through the monoxide layer by heating for 120 to 260 hours at a temperature of 950‹ to 1150‹ C., to form an N-type layer 13, 2500 Š thick. Some arsenic may be included with the impurity source to suppress any tendency for dissociation of arsenic from the Ga As. The monoxide films tends to prevent formation of gallium sulphide, selenide or telluride (which would hinder diffusion) and also acts to prevent undesirable pitting of the surface. A portion, or the whole, of the monoxide layer may be etched away to allow for the provision of an ohmic connection to the P-type layer and a metallic plate may be secured to the N-type portion to provide a diode. Alternatively, further diffusion of a P- type impurity such as zinc or cadmium may be diffused into part of the N-type layer to form an emitter region, electrodes when being added to provide a transistor. In a further modification, N-type impurity is diffused through the monoxide layer into an N-type aluminium arsenide body to form an N + region and a pellet of gold and tin alloy is alloyed into the opposite surface of the N-type region to form a diode with a low-voltage drop in the bulk of its semi-con ductor material.

公开(公告)号：DE2728985A1

公开(公告)日：1978-01-05

申请号：DE2728985

申请日：1977-06-28

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  DAS GOBINDA ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L29/32

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：DE2330515A1

公开(公告)日：1974-01-31

申请号：DE2330515

申请日：1973-06-15

Applicant: IBM

Inventor： KEENAN WILLIAM ANDREW ,  POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L21/66 ,  G01N21/95 ,  G01R31/265 ,  G01R31/26

Abstract: An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means.

公开(公告)号：CA932876A

公开(公告)日：1973-08-28

申请号：CA161044

申请日：1973-01-11

Applicant: IBM

Inventor： DUFFY M ,  YEH TSU-HSING ,  SCHUMANN P JR

公开(公告)号：DE1966236A1

公开(公告)日：1971-12-16

申请号：DE1966236

申请日：1969-07-29

Applicant: IBM

Inventor： CHARLES DUFFY MICHAEL ,  AUGUST SCHUMANN JUN PAUL ,  YEH TSU-HSING

IPC: H01L21/76 ,  H01L21/00 ,  H01L21/265 ,  H01L21/322 ,  H01L21/331 ,  H01L21/337 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/00 ,  H01L27/04 ,  H01L29/08 ,  H01L29/167 ,  H01L29/73 ,  H01L29/808 ,  H01L7/54

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.

公开(公告)号：CA1090005A

公开(公告)日：1980-11-18

申请号：CA281576

申请日：1977-06-28

Applicant: IBM

Inventor： BEYER KLAUS D ,  DAS GOBINDA ,  POPONIAK MICHAEL R ,  YEH TSU-HSING

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/28 ,  H01L21/322 ,  H01L21/331 ,  H01L21/70

Abstract: SEMICONDUCTOR FABRICATION METHOD FOR IMPROVED DEVICE YIELD A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

公开(公告)号：DE2642206A1

公开(公告)日：1977-06-23

申请号：DE2642206

申请日：1976-09-20

Applicant: IBM

Inventor： POPONIAK MICHAEL ROBERT ,  YEH TSU-HSING

IPC: H01L27/08 ,  H01L21/265 ,  H01L21/322 ,  H01L21/48 ,  H01L21/76 ,  H01L29/32 ,  H01L29/78 ,  H01L21/72 ,  H01L27/04