公开(公告)号：DE10341059B4

公开(公告)日：2007-05-31

申请号：DE10341059

申请日：2003-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  SCHWERD MARKUS ,  GOEBEL THOMAS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  SECK MARTIN ,  TORWESTEN HOLGER

IPC: H01L27/08 ,  H01G9/042 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L23/522 ,  H01L27/01 ,  H01L27/06

Abstract: An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

公开(公告)号：DE102005055280B3

公开(公告)日：2007-04-12

申请号：DE102005055280

申请日：2005-11-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  HELNEDER JOHANN ,  TORWESTEN HOLGER

IPC: H01L23/50 ,  H01L21/60

Abstract: Connecting elements (1) are located between contact faces (4) of a semiconductor chip (5) which are arranged on the chip in indentations (8) on the top side (9) of an insulating covering layer (10) and are freely accessible. The connecting elements have a mushroom shape (11) from the first metal area (12) of the connecting element which fills out the indentations and extends with the mushroom top (13) over the edges of the indentations. A second metal area (16) is arranged on the mushroom top and contains the high temperature refractory inter-metallic phases of the metals of a solder (18) and the metal (19) of the contact connecting faces (6) of the circuit carrier (7). An independent claim is included for the production of a semiconductor wafer with connecting elements where contact faces of a chip are arranged in indentations of cover layer, a first metal is precipitated on the contact faces forming a mushroom shape to fill out the indentations and a second metal is applied to the mushroom top which has a lead-free solder.

公开(公告)号：DE10344389A1

公开(公告)日：2005-05-19

申请号：DE10344389

申请日：2003-09-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  SCHWERD MARKUS ,  GOEBEL THOMAS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  HOMMEL MARTINA

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/316 ,  H01L21/822

Abstract: A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.

公开(公告)号：DE10218530B4

公开(公告)日：2005-02-24

申请号：DE10218530

申请日：2002-04-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER WOLFGANG ,  HELNEDER JOHANN ,  SCHWERD MARKUS ,  KOERNER HEINRICH ,  GLASOW ALEXANDER VON ,  FISCHER ARMIN

IPC: H01L27/08 ,  H01L23/522

Abstract: Metallic structures serve as thermal shielding and as devices for transferring heat to a substrate and have first metallic crosspieces (16a-f) in a first metallized layer that stretch crosswise across strip resistors (10a-c), parallel to which and beneath which run second cross pieces (18a-i). The first crosspieces link to the substrate via metallic ridges (20a-d) to produce heat.

公开(公告)号：DE10218530A1

公开(公告)日：2003-11-20

申请号：DE10218530

申请日：2002-04-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WALTER WOLFGANG ,  HELNEDER JOHANN ,  SCHWERD MARKUS ,  KOERNER HEINRICH ,  GLASOW ALEXANDER VON ,  FISCHER ARMIN

IPC: H01L27/08 ,  H01L23/522

Abstract: Metallic structures serve as thermal shielding and as devices for transferring heat to a substrate and have first metallic crosspieces (16a-f) in a first metallized layer that stretch crosswise across strip resistors (10a-c), parallel to which and beneath which run second cross pieces (18a-i). The first crosspieces link to the substrate via metallic ridges (20a-d) to produce heat.

公开(公告)号：DE102006040585B4

公开(公告)日：2013-02-07

申请号：DE102006040585

申请日：2006-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN

IPC: H01L21/768 ,  H01L21/283

Abstract: Verfahren zum Auffüllen eines Grabens (5) in einem Halbleiterprodukt (1), umfassend: Abscheiden eines ersten Materials (12a) auf ein Halbleiterprodukt (1), das eine Oberfläche (4), in der mindestens ein Graben (5) ausgebildet ist, aufweist, wodurch innerhalb des Grabens (5) und auf der Oberfläche (4) des Halbleiterprodukts (1) außerhalb des Grabens (5) eine erste Schicht (12) gebildet wird, wobei das erste Material (12a) elektrisch leitfähig ist, Abscheiden eines zweiten Materials (14a), wodurch über der ersten Schicht (12) außerhalb des Grabens (5) eine zweite Schicht (14) gebildet und der Graben (5) aufgefüllt wird, chemisch-mechanisches Polieren, wodurch über der ersten Schicht (12) außerhalb des Grabens (5) die zweite Schicht (14) entfernt wird und wodurch die erste Schicht (12) außerhalb des Grabens (5) zumindest freigelegt wird, und Entfernen restlichen ersten Materials (12a) der ersten Schicht (12) durch nasschemisches Ätzen, wobei das nasschemische Ätzen als rein chemisches Ätzen ohne mechanischen Abrieb durch...

公开(公告)号：DE10360206A1

公开(公告)日：2005-07-21

申请号：DE10360206

申请日：2003-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  TORWESTEN HOLGER

IPC: H01L21/288 ,  C25D5/02 ,  H01L21/768 ,  H05K3/22 ,  H05K3/24

公开(公告)号：DE10355953A1

公开(公告)日：2005-07-07

申请号：DE10355953

申请日：2003-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  TORWESTEN HOLGER

IPC: H01L21/288 ,  H01L21/60 ,  H01L23/485 ,  H01L21/3213 ,  H01L23/488

Abstract: A method for electroplating is provided in which a copper layer is patterned using a resist. A barrier layer lies below the copper layer and is used to supply the electroplating current in regions without the copper layer. The method makes it possible to produce high-quality soldering bumps.

公开(公告)号：DE10348641A1

公开(公告)日：2005-05-25

申请号：DE10348641

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HELNEDER JOHANN ,  SCHWERD MARKUS ,  GOEBEL THOMAS ,  MITCHELL ANDREA ,  KOERNER HEINRICH ,  DREXL STEFAN ,  SECK MARTIN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/76 ,  H01L27/08