公开(公告)号：DE19902462B4

公开(公告)日：2004-02-05

申请号：DE19902462

申请日：1999-01-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRACK HELMUT ,  TIHANYI JENOE

IPC: H01L25/065 ,  H01L25/07 ,  H01L23/538

公开(公告)号：DE10024518A1

公开(公告)日：2001-11-29

申请号：DE10024518

申请日：2000-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  STRACK HELMUT

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/32 ,  H01L29/78 ,  H01L23/62 ,  H01L25/07

Abstract: Integrated semiconductor switching element comprises a first connecting zone (10) of first conductivity type (n) to which an electrically conducting first electrode (12) is connected; a second connecting zone (20) of first conductivity type (n); a substrate zone (30) of second conductivity type (p) arranged between the two connecting zones; and a control electrode arranged next to the substrate zone and insulated from the connecting zones and the substrate zone. Impurity atoms are inserted in the transition region between the first connecting zone and the substrate zone to produce an ohmic resistance (R) between the substrate zone and the first connecting zone. An Independent claim is also included for a process for the production of a semiconductor switching element. Preferred Features: The impurity atoms are argon, phosphorus or boron atoms.

公开(公告)号：DE19942677C2

公开(公告)日：2001-08-16

申请号：DE19942677

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78

公开(公告)号：DE102019118803A1

公开(公告)日：2021-01-14

申请号：DE102019118803

申请日：2019-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KONRATH JENS PETER ,  STEGNER ANDRE RAINER ,  STRACK HELMUT

IPC: H01L21/266 ,  H01L21/02 ,  H01L21/331 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78

Abstract: Vorgeschlagen wird ein Verfahren zum Herstellen einer Halbleitervorrichtung. Ein Siliziumcarbid-, SiC-, Halbleiterkörper (102) wird bereitgestellt. Ionen werden durch eine erste Oberfläche (108) des SiC-Halbleiterkörpers (102) mittels zumindest eines Ionenimplantationsprozesses in den SiC-Halbleiterkörper (102) eingebracht. Danach wird auf der ersten Oberfläche (108) des SiC-Halbleiterkörpers (102) eine SiC-Vorrichtungsschicht (110) ausgebildet. Elemente einer Halbleitervorrichtung werden in oder über der SiC-Vorrichtungsschicht (110) ausgebildet.

公开(公告)号：DE102005011967B4

公开(公告)日：2007-07-19

申请号：DE102005011967

申请日：2005-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01C7/112 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

公开(公告)号：DE102005011967A1

公开(公告)日：2006-10-05

申请号：DE102005011967

申请日：2005-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01C7/112 ,  H01L29/739 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

Abstract: A ditch structure is formed between the electrodes (5,6) and at part of the drift distance (4) in the semiconductor body (3). Diodes or resistors (10) are arranged in alternating sections (11,12) that are stacked together in the ditch structure. The potential distribution on a diode pile or the resistors is based on the diode or resistor voltage. The drift distance enables the concentration of dopant to increase while keeping the maximum voltage unchanged. An independent claim is also included for a semiconductor component manufacturing method.

公开(公告)号：DE102005001151A1

公开(公告)日：2006-07-20

申请号：DE102005001151

申请日：2005-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  HOSSEINI KHALIL ,  STRACK HELMUT

IPC: H01L23/28 ,  H01L23/48 ,  H01L29/78

Abstract: Component arrangement has semiconductor chip (10), load connections, and control port whereby first and second load connection are arranged on opposite sides of semiconductor chip. Chip carrier (21), on which semiconductor chip is arranged, is connected electrically and thermally leading with first load connection of semiconductor body. Contact part (22) is arranged which is connected to second load connection and is electrically and thermally leading. Dielectric mass is surrounded by semiconductor chip, carrier chip and contact part and form a housing. Chip carrier lies exposed at first side (31) of housing and contact part lies exposed on second side (32) of housing opposite to first side. Control port is connected electrically leading with a connection leg (23), which is led out from the housing. An independent claim is also included for the component cascade with two pile-like component arrangement arranged one on another.

公开(公告)号：DE102004063959A1

公开(公告)日：2006-06-29

申请号：DE102004063959

申请日：2004-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L21/28

Abstract: A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes establishing a positive temperature gradient in a vertical direction of the semiconductor body proceeding from the one side. The temperature in the region of the one side is higher than the eutectic temperatures of system, so that the metal of the metal layer migrates in the vertical direction into the semiconductor body. The method also includes discontinuing the temperature gradient once the metal reaches the predetermined vertical position in the semiconductor body, in order thereby to obtain the metallic layer at the predetermined position.

公开(公告)号：DE59909045D1

公开(公告)日：2004-05-06

申请号：DE59909045

申请日：1999-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PORST ALFRED ,  STRACK HELMUT ,  MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  BRUNNER HEINRICH ,  BAUER JOSEF ,  BARTHELMESS REINER

IPC: H01L29/744 ,  H01L29/10 ,  H01L29/12 ,  H01L29/36 ,  H01L29/739 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/861

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

公开(公告)号：DE10245089A1

公开(公告)日：2004-04-08

申请号：DE10245089

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  STRACK HELMUT

IPC: H01L21/329 ,  H01L29/08 ,  H01L29/32 ,  H01L29/74 ,  H01L29/861 ,  H01L29/868 ,  H01L21/328 ,  H01L29/739 ,  H01L29/78

Abstract: Doping process comprises preparing a semiconductor body (2) with a base dopant of first conductivity, producing crystal defects in the semiconductor body, introducing hydrogen ions from a first surface (3, 4) into the semiconductor body, and heat treating in which temperature and duration are selected so that hydrogen atoms are introduced over the whole crystal defect region of the semiconductor body. An Independent claim is also included for a semiconductor component produced by the above process.