公开(公告)号：US20200227388A1

公开(公告)日：2020-07-16

申请号：US16641241

申请日：2017-09-29

Applicant: Intel IP Corporation

Inventor： Bernd Waidhas ,  Georg Seidemann ,  Thomas Wagner ,  Andreas Wolter ,  Andreas Augustin ,  Sonja Koller ,  Thomas Ort ,  Reinhard Mahnkopf

IPC: H01L25/065 ,  H01L25/00

Abstract: A semiconductor package includes a first semiconductor die, a semiconductor device comprising a second semiconductor die, and one or more wire bond structures. The wire bond structure includes a bond interface portion. The wire bond structure is arranged next to the first semiconductor die. The first semiconductor die and the bond interface portion of the wire bond structure are arranged at the same side of the semiconductor device. An interface contact structure of the semiconductor device is electrically connected to the wire bond structure.

公开(公告)号：US20190341371A1

公开(公告)日：2019-11-07

申请号：US16515979

申请日：2019-07-18

Applicant: Intel IP Corporation

Inventor： Bernd Waidhas ,  Georg Seidemann ,  Andreas Augustin ,  Laurent Millou ,  Andreas Wolter ,  Reinhard Mahnkopf ,  Stephan Stoeckl ,  Thomas Wagner

IPC: H01L25/065 ,  H01L25/10 ,  H01L21/48 ,  H01L23/48 ,  H01L25/00

Abstract: A semiconductive device stack, includes a baseband processor die with an active surface and a backside surface, and a recess in the backside surface. A recess-seated device is disposed in the recess, and a through-silicon via in the baseband processor die couples the baseband processor die at the active surface to the recess-seated die at the recess. A processor die is disposed on the baseband processor die backside surface, and a memory die is disposed on the processor die. The several dice are coupled by through-silicon via groups.

公开(公告)号：US09550670B2

公开(公告)日：2017-01-24

申请号：US14731211

申请日：2015-06-04

Applicant: Intel IP Corporation

Inventor： Christian Geissler ,  Thorsten Meyer ,  Gerald Ofner ,  Reinhard Mahnkopf ,  Andreas Augustin ,  Christian Mueller

IPC: H01L21/00 ,  B81C1/00 ,  B81B7/00 ,  H01L23/00 ,  H01L21/56

CPC classification number: B81C1/00666 ,  B81B7/0054 ,  B81C1/00261 ,  B81C1/00349 ,  B81C2203/0136 ,  B81C2203/0154 ,  H01L21/568 ,  H01L23/3135 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/24137 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73207 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73277 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.

Abstract translation: 描述了用于集成微机电系统（MEMS）的应力缓冲层。 例如，半导体封装包括具有第一和第二表面的衬底，第二表面具有外部导电触点阵列。 微机电系统（MEMS）部件设置在基板的第一表面上方。 缓冲层设置在MEMS部件上方，缓冲层具有第一杨氏模量。 模具化合物设置在缓冲层上方，模塑料具有高于第一杨氏模量的第二杨氏模量。

公开(公告)号：US20160200566A1

公开(公告)日：2016-07-14

申请号：US14403571

申请日：2013-06-28

Applicant: INTEL IP CORPORATION

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

Abstract translation: 在实施例中，封装组件可以包括专用集成电路（ASIC）和具有有源侧和无源侧的微机电系统（MEMS）。 在实施例中，MEMS可以通过一个或多个互连直接耦合到ASIC。 MEMS，ASIC和一个或多个互连可以限定或形成空腔，使得MEMS的有源部分在空腔内。 在一些实施例中，封装组件可以包括通过多个一个或多个互连件直接耦合到ASIC的多个MEMS。 可以描述和/或要求保护其他实施例。

公开(公告)号：US11037855B2

公开(公告)日：2021-06-15

申请号：US16467582

申请日：2016-12-30

Applicant: Intel IP Corporation

Inventor： Sonja Koller ,  Reinhard Mahnkopf

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/10

Abstract: A system-in-package apparatus includes a contoured heat sink that provides a first recess and a subsequent recess. The system-in-package apparatus includes a flexible printed wiring board that is wrapped onto the contoured heat sink after a manner to enclose the first semiconductive device into the first recess and a semiconductive device in the subsequent recess.

公开(公告)号：US20190103333A1

公开(公告)日：2019-04-04

申请号：US15719653

申请日：2017-09-29

Applicant: Intel IP Corporation

Inventor： Reinhard Mahnkopf ,  Andreas Wolter ,  Sonja Koller

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/498 ,  H01L27/02 ,  H01L27/12 ,  H01L21/48 ,  H01L21/762

Abstract: A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.

公开(公告)号：US10150668B2

公开(公告)日：2018-12-11

申请号：US15484765

申请日：2017-04-11

Applicant: Intel IP Corporation

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: H01L27/14 ,  B81C1/00 ,  B81B7/00

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

公开(公告)号：US10141265B2

公开(公告)日：2018-11-27

申请号：US15394388

申请日：2016-12-29

Applicant: Intel IP Corporation

Inventor： Bernd Waidhas ,  Stephan Stoeckl ,  Andreas Wolter ,  Reinhard Mahnkopf ,  Georg Seidemann ,  Thomas Wagner ,  Laurent Millou

IPC: H01L23/06 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/48 ,  H01L23/053

Abstract: A bent-bridge semiconductive apparatus includes a silicon bridge that is integral to a semiconductive device and the silicon bridge is deflected out of planarity. The silicon bridge may couple two semiconductive devices, all of which are from an integral processed die.

公开(公告)号：US20170217766A1

公开(公告)日：2017-08-03

申请号：US15484765

申请日：2017-04-11

Applicant: Intel IP Corporation

Inventor： Gerald Ofner ,  Thorsten Meyer ,  Reinhard Mahnkopf ,  Christian Geissler ,  Andreas Augustin

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.

公开(公告)号：US09209143B2

公开(公告)日：2015-12-08

申请号：US14038248

申请日：2013-09-26

Applicant: Intel IP Corporation

Inventor： Georg Seidemann ,  Sven Albers ,  Teodora Ossiander ,  Michael Skinner ,  Hans-Joachim Barth ,  Harald Gossner ,  Reinhard Mahnkopf ,  Christian Mueller ,  Wolfgang Molzer

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/09 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/03444 ,  H01L2224/0346 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05016 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06155 ,  H01L2224/06183 ,  H01L2224/08054 ,  H01L2224/08056 ,  H01L2224/08057 ,  H01L2224/08121 ,  H01L2224/08137 ,  H01L2224/08225 ,  H01L2224/09135 ,  H01L2224/09183 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/16137 ,  H01L2224/48137 ,  H01L2224/80201 ,  H01L2224/80895 ,  H01L2224/81203 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1434 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An apparatus comprises a first integrated circuit (IC) die that includes a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, a second IC die including a top layer, a bottom surface, a sidewall surface extending from a top surface of the top layer to the bottom surface, and at least one multi-surface contact pad, wherein the second IC die is arranged adjacent to the first IC die, and includes an electrically conductive bond in contact with at least one of the top surface or the side surface of the multi-surface contact pad of the first IC die and the top surface of the multi-surface contact pad of the second IC die.

Abstract translation: 一种装置包括第一集成电路（IC）芯片，其包括顶层，底表面，从顶层的顶表面延伸到底表面的侧壁表面，以及至少一个多表面接触垫，第二 IC芯片包括顶层，底面，从顶层的顶表面延伸到底表面的侧壁表面，以及至少一个多表面接触焊盘，其中第二IC管芯被布置为与第一IC 并且包括与第一IC管芯的多表面接触焊盘的顶表面或侧表面中的至少一个与第二IC管芯的多表面接触焊盘的顶表面接触的导电接合 。