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    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    11.
    发明申请
    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS 审中-公开
    多层叠加计量目标和综合覆盖度量度测量系统

    公开(公告)号：WO2012018673A3

    公开(公告)日：2012-05-18

    申请号：PCT/US2011045778

    申请日：2011-07-28

    Applicant: KLA TENCOR CORP ,  KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  COHEN GUY

    Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  COHEN GUY

    IPC: H01L21/027

    CPC classification number: G03F7/70633 ,  G03F7/70683

    Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

    Abstract translation: 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构，每个目标结构包括一组两个或多个模式元素，其中目标结构被配置为在目标结构对准时共享公共对称中心，每个目标结构 目标结构相对于公共对称中心不变为N度旋转，其中N等于或大于180度，其中两个或更多个图案元素中的每一个具有单独的对称中心，其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的，其中M等于或大于180度。

    ADVANCED PROCESS CONTROL OPTIMIZATION
    12.
    发明申请
    ADVANCED PROCESS CONTROL OPTIMIZATION 审中-公开
    高级过程控制优化

    公开(公告)号：WO2011159625A3

    公开(公告)日：2012-04-05

    申请号：PCT/US2011040216

    申请日：2011-06-13

    Applicant: KLA TENCOR CORP ,  CHOI DONGSUB ,  WIDMANN AMIR ,  KANDEL DANIEL ,  TIEN DAVID

    Inventor： CHOI DONGSUB ,  WIDMANN AMIR ,  KANDEL DANIEL ,  TIEN DAVID

    IPC: H01L21/027

    CPC classification number: G03F7/70525

    Abstract: A method for automatic process control (APC) performance monitoring may include, but is not limited to: computing one or more APC performance indicators for one or more production lots of semiconductor devices; and displaying a mapping of the one or more APC performance indicators to the one or more production lots of semiconductor devices.

    Abstract translation: 用于自动过程控制（APC）性能监控的方法可以包括但不限于：计算一个或多个半导体器件生产批次的一个或多个APC性能指标; 以及将所述一个或多个APC性能指示符的映射显示给所述一个或多个半导体器件的生产批次。

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    14.
    发明公开
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    FOKUSMESSUNGEN MIT SCATTEROMETRIE

    公开(公告)号：EP3126893A4

    公开(公告)日：2017-10-04

    申请号：EP15774184

    申请日：2015-03-30

    Applicant: KLA-TENCOR CORP

    Inventor： EL KODADI MOHAMMED ,  AMIR NURIEL ,  VOLKOVICH ROIE ,  LEVINSKI VLADIMIR ,  FELER YOEL ,  KANDEL DANIEL ,  GUTMAN NADAV ,  PANDEV STILIAN ,  SANKO DZMITRY

    IPC: G02B15/14 ,  G01N21/47 ,  G03F7/20 ,  G06F17/50 ,  H04N7/18

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元素的周期性结构。 元件沿着垂直于第一方向的第二方向以第二节距周期性地定向，并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。 在产生的目标中，第一间距可以是大约设备间距，并且第二间距可以大几倍。 可以产生第一焦点不敏感图案以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    15.
    发明公开
    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS 审中-公开
    MEHRSCHICHTIGESÜBERLAPPUNGSMETROLOGIE-ZIEL UND ENTSPRECHENDEÜBERLAPPUNGSMETROLOGIE-MESSSYSTEME

    公开(公告)号：EP2601675A4

    公开(公告)日：2017-08-23

    申请号：EP11815104

    申请日：2011-07-28

    Applicant: KLA-TENCOR CORP

    Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  COHEN GUY

    IPC: H01L21/027

    CPC classification number: G03F7/70633 ,  G03F7/70683

    Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

    Abstract translation: 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构，每个目标结构包括一组两个或更多个模式元素，其中目标结构被配置为在目标结构对齐时共享对称的共同中心，每个 目标结构围绕所述公共对称中心不变为N度旋转，其中N等于或大于180度，其中所述两个或更多个图案元件中的每一个具有单独的对称中心，其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的，其中M等于或大于180度。

    SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION
    17.
    发明公开
    SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION 有权

    公开(公告)号：EP2386114A4

    公开(公告)日：2017-10-25

    申请号：EP10729404

    申请日：2010-01-04

    Applicant: KLA-TENCOR CORP

    Inventor： ADEL MICHAEL E ,  MANASSEN AMNON ,  KANDEL DANIEL

    IPC: G03F7/20 ,  H01L21/66

    CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

    Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION
    18.
    发明公开
    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION 审中-公开
    方法和系统提供PROZESSWERKZEUGKORRIGIERBARER使用优化的扫描方案智能插值

    公开(公告)号：EP2537180A4

    公开(公告)日：2016-05-04

    申请号：EP11745086

    申请日：2011-02-14

    Applicant: KLA TENCOR CORP

    Inventor： IZIKSON PAVEL ,  KANDEL DANIEL ,  ROBINSON JOHN

    IPC: H01L21/66 ,  H01L21/027

    CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

    Abstract translation: 本发明可以包括经由在全知采样处理的第一批晶圆的晶片上执行第一测量，计算第一组处理工具可校正值的利用通过在全知采样过程所执行的测量的一个或多个结果，随机地选择一个 集的第一批晶圆的晶片的场的采样位置的，通过施加到内插处理，以随机选择的组场采样位置的，worin内插处理计算第二组处理工具可校正值的利用来自所述第一组工艺的值 工具可校正值用于为了计算可校正值对未包括在所述一组随机选择的视野的第一批次的晶片的字段中的随机选择的组场采样位置的，和确定性采矿子采样方案，通过比较所述第一组处理工具的 可校正值到第二组可校正值的。

    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL
    19.
    发明公开
    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
    用于提供改进的过程控制的质量方法的方法和系统

    公开(公告)号：EP2694983A4

    公开(公告)日：2014-10-29

    申请号：EP12768608

    申请日：2012-04-04

    Applicant: KLA TENCOR CORP

    Inventor： KANDEL DANIEL ,  COHEN GUY ,  KLEIN DANA ,  LEVINSKI VLADIMIR ,  SAPIENS NOAM ,  SHULMAN ALEX ,  KAMENETSKY VLADIMIR ,  AMIT ERAN ,  VAKSHTEIN IRINA

    IPC: G01N37/00 ,  G03F7/20

    CPC classification number: G03F7/70633 ,  G01N2223/6116

    Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

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