公开(公告)号：DE60041350D1

公开(公告)日：2009-02-26

申请号：DE60041350

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

公开(公告)号：AU2003270533A8

公开(公告)日：2004-04-08

申请号：AU2003270533

申请日：2003-09-10

Applicant: LAM RES CORP

Inventor： KISTLER RODNEY ,  GOTKIS YEHIEL ,  BRIGHT NICOLAS ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID

IPC: B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  H01L21/321 ,  H01L21/66 ,  G01N27/72

Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

公开(公告)号：AU2003270533A1

公开(公告)日：2004-04-08

申请号：AU2003270533

申请日：2003-09-10

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS ,  KISTLER RODNEY

IPC: B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  H01L21/321 ,  H01L21/66 ,  G01N27/72

Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

公开(公告)号：AU3082201A

公开(公告)日：2001-05-30

申请号：AU3082201

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01J37/00

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

公开(公告)号：SG177912A1

公开(公告)日：2012-02-28

申请号：SG2011094984

申请日：2007-12-12

Applicant: LAM RES CORP

Inventor： BRIGHT NICOLAS ,  HEMKER DAVID ,  REDEKER FRITZ ,  DORDI YEZDI

Abstract: PROCESS INTEGRATION SCHEME TO LOWER OVERALL DIELECTRIC CONSTANT IN BEOL INTERCONNECT STRUCTURESAbstractBack-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive linesFigure: 9B

公开(公告)号：AT420455T

公开(公告)日：2009-01-15

申请号：AT00991021

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  BRIGHT NICOLAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.