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    GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA
    11.
    发明公开
    GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA 审中-公开
    具有大表面接地的CONTROLS RING

    公开(公告)号：EP2417627A4

    公开(公告)日：2015-09-23

    申请号：EP10762276

    申请日：2010-04-06

    Applicant: LAM RES CORP

    Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H05H1/24

    CPC classification number: H01J37/32642 ,  H01J37/32422 ,  H01J37/32495 ,  H01J37/32623

    Abstract: A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section.

    PLASMA CONFINEMENT RING ASSEMBLIES HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS
    13.
    发明公开
    PLASMA CONFINEMENT RING ASSEMBLIES HAVING REDUCED POLYMER DEPOSITION CHARACTERISTICS 有权
    TEN EN TEN EN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN TEN

    公开(公告)号：EP1869228A4

    公开(公告)日：2010-11-03

    申请号：EP06738371

    申请日：2006-03-15

    Applicant: LAM RES CORP

    Inventor： DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  ROGERS JAMES H ,  TRUSSELL DAVID

    IPC: C23C16/00

    CPC classification number: H01J37/32623 ,  H01J37/32477 ,  Y10S156/914 ,  Y10S156/915

    Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.

    Abstract translation: 提供了等离子体约束环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免在这些表面上的聚合物沉积。 等离子体限制环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。 热扼流圈减少从这些部分到环的其他部分的热传导，这导致环等离子体处理期间环的选定部分达到期望的温度。

    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL
    17.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
    用于等离子体电压控制的系统，方法和装置

    公开(公告)号：WO2013070472A3

    公开(公告)日：2015-06-11

    申请号：PCT/US2012062867

    申请日：2012-10-31

    Applicant: LAM RES CORP

    Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

    IPC: C23C14/34

    CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

    Abstract: A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

    Abstract translation: 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

    SHOWERHEAD ELECTRODE
    18.
    发明申请
    SHOWERHEAD ELECTRODE 审中-公开
    喷头电极

    公开(公告)号：WO2012030382A3

    公开(公告)日：2012-08-23

    申请号：PCT/US2011001500

    申请日：2011-08-25

    Applicant: LAM RES CORP ,  DE LA LLERA ANTHONY ,  MANKIDY PRATIK ,  KELLOGG MICHAEL C ,  DHINDSA RAJINDER

    Inventor： DE LA LLERA ANTHONY ,  MANKIDY PRATIK ,  KELLOGG MICHAEL C ,  DHINDSA RAJINDER

    IPC: H01L21/3065 ,  H01L21/205 ,  H05H1/46

    CPC classification number: H01R13/20

    Abstract: Abstract A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

    Abstract translation: 摘要在等离子体反应室中用于蚀刻半导体衬底的喷头电极，衬垫组件及其组件提供了改进的气体喷射孔图案，定位精度和减少的翘曲，这导致等离子体处理速率的均匀性提高。 将内部电极和垫圈组装到支撑构件上的方法包括同时接合凸轮锁。

    METHODS FOR CONTROLLING PLASMA CONSTITUENT FLUX AND DEPOSITION DURING SEMICONDUCTOR FABRICATION AND APPARATUS FOR IMPLEMENTING THE SAME
    19.
    发明申请
    METHODS FOR CONTROLLING PLASMA CONSTITUENT FLUX AND DEPOSITION DURING SEMICONDUCTOR FABRICATION AND APPARATUS FOR IMPLEMENTING THE SAME 审中-公开
    用于控制半导体制造期间等离子体成分通量和沉积的方法以及实现该方法的装置

    公开(公告)号：WO2012036923A3

    公开(公告)日：2012-05-31

    申请号：PCT/US2011050379

    申请日：2011-09-02

    Applicant: LAM RES CORP ,  DHINDSA RAJINDER

    Inventor： DHINDSA RAJINDER

    IPC: H01L21/3065

    CPC classification number: H01L21/67069 ,  C23F1/08 ,  G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67248

    Abstract: A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time- dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

    Abstract translation: 确定在等离子体处理期间施加的时间依赖的衬底温度。 基于在给定时间对等离子体成分的粘着系数的控制来确定在任何给定时间的时间依赖的衬底温度。 还确定了在等离子体处理期间将施加的上部等离子体边界与衬底之间的时间依赖性温度差。 基于在给定时间控制指向衬底的等离子体成分的通量来确定在任何给定时间的随时间变化的温差。 取决于时间的衬底温度和时间依赖的温度差以适合由定义的温度控制装置使用的数字格式存储并连接到上部等离子体边界和衬底的直接温度控制。 还提供了用于在等离子体处理期间实现上部等离子体边界和衬底温度控制的系统。

    RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS
    20.
    发明申请
    RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 审中-公开
    无线电频率（RF）地面返回安排

    公开(公告)号：WO2011026129A3

    公开(公告)日：2011-06-16

    申请号：PCT/US2010047379

    申请日：2010-08-31

    Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KOSHISHI AKIRA ,  MARAKHTANOV ALEXEI

    Inventor： DHINDSA RAJINDER ,  KOSHISHI AKIRA ,  MARAKHTANOV ALEXEI

    IPC: H01L21/3065

    CPC classification number: H01J37/32807 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32642

    Abstract: A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.

    Abstract translation: 提供射频（RF）接地返回装置，用于在处理基板期间为等离子体处理室的处理室内的RF电流提供低阻抗RF返回路径。 RF接地返回装置包括一组约束环，其被配置为围绕限制室体积，该限制室容积被配置为在衬底处理期间维持用于蚀刻衬底的等离子体。 RF接地返回装置还包括下电极支撑结构。 RF接地返回装置还包括RF接触部件，其在所述一组约束环和下部电极支撑结构之间提供RF接触，使得低阻抗RF返回路径有助于将RF电流返回到RF源。

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