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    A METHOD OF FORMING A DEVICE
    11.
    发明专利
    A METHOD OF FORMING A DEVICE 未知

    公开(公告)号：MY167491A

    公开(公告)日：2018-08-30

    申请号：MYPI2013702254

    申请日：2013-11-25

    Applicant: MIMOS BERHAD

    Inventor： DANIEL BIEN CHIA SHENG ,  LEE WAI YEE ,  LEE HING WAH ,  KHAIRUL ANUAR BIN ABD WAHID

    IPC: B82Y30/00 ,  B82Y40/00 ,  H01L51/10

    Abstract: THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A DEVICE, MORE PARTICULARLY THE PRESENT INVENTION RELATES TO A METHOD OF FORMING A GRAPHENE DEVICE BY EFFECTIVELY TRANSFERRING A GRAPHENE LAYER COMPRISING THE STEPS OF PROVIDING AT LEAST A FIRST MATERIAL (11) LAYER, DEPOSITING AT LEAST A SECOND MATERIAL (12) LAYER ON SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND DEPOSITING AT LEAST A CATALYST LAYER (21) ON SAID AT LEAST A SECOND MATERIAL (12) LAYER FOR FORMING NANOSTRUCTURES (22), ETCHING SAID AT LEAST A FIRST MATERIAL (11) LAYER, AND TRANSFERRING REMAINING LAYERS OF SAID AT LEAST A SECOND MATERIAL (12) LAYER WITH NANOSTRUCTURES (22) ONTO AT LEAST A SUBSTRATE (13). MOST ILLUSTRATIVE DRAWING:

    AN ION SENSITIVE FIELD EFFECT TRANSISTOR
    12.
    发明专利
    AN ION SENSITIVE FIELD EFFECT TRANSISTOR 未知

    公开(公告)号：MY186247A

    公开(公告)日：2021-06-30

    申请号：MYUI2012005558

    申请日：2012-12-21

    Applicant: MIMOS BERHAD

    Inventor： DANIEL BIEN CHIA SHENG ,  MOHD ROFEI MAT HUSSIN ,  NASIMAH SAIDIN ,  WAN AZLI WAN ISMAIL ,  MOHD ISMAHADI SYONO

    Abstract: The present invention relates to a multigate electrode ion sensitive filed effect transistor comprising: a semiconductor substrate (101); a channel region (103) having doped polysilicon layer (104) of at least 5e16 per cubic centimeter for conducting the current, formed over the semiconductor substrate (101); a drain region (105); a source region (107), wherein the channel region (103) is stacked between the source region (107) and the drain region (105); a gate insulating layer (109); and a sensing membrane layer (111); characterized in that the gate insulating layer (109) and the sensing membrane layer (111) are formed covering planar surfaces and the stack structure of the channel region (103), the source region (107) and the drain region (105) to create multigate electrodes.

    NANOSTRUCTURED SENSING DEVICE AND METHOD OF FABRICATING SAME
    15.
    发明专利
    NANOSTRUCTURED SENSING DEVICE AND METHOD OF FABRICATING SAME 未知

    公开(公告)号：MY158140A

    公开(公告)日：2016-09-15

    申请号：MYPI2011003250

    申请日：2011-07-11

    Applicant: MIMOS BERHAD

    Inventor： ANEES BT ABDUL AZIZ ,  DANIEL BIEN CHIA SHENG

    IPC: G01N27/12

    Abstract: THE PRESENT INVENTION RELATES GENERALLY TO A NANOSTRUCTURED SENSING DEVICE COMPRISES OF A SUPPORT STRUCTURE (101), AT LEAST ONE SUSPENDED RESISTOR STRUCTURE (103) WHICH IS FORMED PERPENDICULAR TO SAID SUPPORT STRUCTURE (101) AND A PLURALITY OF SENSING ELEMENTS (209) BEING ASSEMBLED ONTO SAID RESISTOR STRUCTURE (103), WHEREIN SAID RESISTOR STRUCTURE (103) IS ANCHORED TO SAID SUPPORT STRUCTURE (101) VIA AT LEAST ONE HINGE PAD (105). SAID SENSING DEVICE OF THE PRESENT INVENTION CAN BE FABRICATED BY TWO DIFFERENT APPROACHES, EITHER SAID HINGE PAD (105) IS BEING DEPOSITED FIRST AND FOLLOWED BY THE GROW OF SAID PLURALITY OF SENSING ELEMENTS (209) ON BOTH TOP AND BOTTOM OF SAID RESISTOR STRUCTURE (103) OR SAID PLURALITY OF SENSING ELEMENTS (209) IS GROWN BEFORE SAID HINGE PAD (105) IS DEPOSITED. (THE MOST ILLUSTRATIVE

    AN APPARATUS FOR SENSOR APPLICATIONS AND METHOD OF MANUFACTURING THEREOF
    16.
    发明专利
    AN APPARATUS FOR SENSOR APPLICATIONS AND METHOD OF MANUFACTURING THEREOF 未知

    公开(公告)号：MY178645A

    公开(公告)日：2020-10-19

    申请号：MYUI2011002143

    申请日：2011-05-12

    Applicant: MIMOS BERHAD

    Inventor： DANIEL BIEN CHIA SHENG ,  MASURI OTHMAN ,  ALI ZAINI ABDULLAH

    Abstract: The present invention relates to an apparatus for sensor applications and method of manufacturing thereof, more particularly the present invention relates to sensors in a channel of an apparatus and method of manufacturing the apparatus. The apparatus comprises a substrate (11) having an insulating layer (l2), at least a channel (13) on the substrate (11) for providing a flow path, at least a sensor (l4) including an interface (15) associated with the sidewall of the channel (13) for detecting samples, and at least a contact means (16) attached to the sensor (14) for electrical connectivity. Most illustrative drawing: Figure 1

    A RESISTANCE TEMPERATURE DETECTOR DEVICE
    17.
    发明专利
    A RESISTANCE TEMPERATURE DETECTOR DEVICE 未知

    公开(公告)号：MY176767A

    公开(公告)日：2020-08-21

    申请号：MYPI2015702215

    申请日：2015-07-07

    Applicant: MIMOS BERHAD

    Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  SURAYA BINTI SULAIMAN ,  KHAIRUL ANUAR BIN ABDUL WAHID ,  LEE HING WAH

    Abstract: The present invention disclosed a thin-film resistance temperature detector (RTD) device with a single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to a plurality of sensor electrodes (60). A method for fabricating the thin-film RTD device with the single RTD structure, dual interconnecting RTD structures, and dual interconnecting RTD structures paired to the plurality of sensor electrodes (60) are also disclosed herein. The RTD pattern (10) (20) is connected in series, while the dual RTD structures are connected via a concentric square pad (30) in a stacking and parallel manner. Further, the RTD pattern (10) (20) is arranged in a continuous array and provides a localised and user-selectable point resistance value via a plurality of contact pads (50A) (50B) and a secondary busbar connection line (40) which allows the RTD device to continue operating even when any of the RTD patterns or the RTD structures are broken.

    FLEXIBLE PRESSURE-SENSING DEVICE AND PROCESS FOR ITS FABRICATION
    18.
    发明专利
    FLEXIBLE PRESSURE-SENSING DEVICE AND PROCESS FOR ITS FABRICATION 未知

    公开(公告)号：MY171435A

    公开(公告)日：2019-10-14

    申请号：MYPI2014701545

    申请日：2014-06-11

    Applicant: MIMOS BERHAD

    Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  SAAT SHUKRI BIN EMBONG

    IPC: G01L1/18

    Abstract: A pressure-sensing device (10) and a process for fabricating it is disclosed. In a preferred embodiment, a sacrificial oxide layer (11) is first formed onto a silicon substrate (30). A bottom polymer film (14) is then formed on oxide layer (11). Conductive elements including electrodes (12a, 12b) and/or contact pads (18a, 18b) are formed on the bottom polymer film (14). A graphene sheet (20) is deposited to electrically connect the electrodes (12a, 12b). A top polymer film (16) is then laid on top so that the conductive elements (12, 18) and graphene (20) are sandwiched and encapsulated in between the top and bottom polymer layers (14, 16) chosen from polyimide or poly dimethylsiloxane (PDMS). Openings (19a, 19b) on top polymer layer (16) may optionally be provided to allow for interconnection of the contact pads (18a, 18b). The sacrificial oxide (11) is then etched to release the completed device (10) from the substrate (30) may be reused.

    METHOD OF FABRICATING NANO-RESISTORS
    19.
    发明专利
    METHOD OF FABRICATING NANO-RESISTORS 未知

    公开(公告)号：MY169590A

    公开(公告)日：2019-04-22

    申请号：MYPI2010700005

    申请日：2010-02-02

    Applicant: MIMOS BERHAD

    Inventor： DANIEL BIEN CHIA SHENG ,  AZLINA MOHD ZAIN ,  LEE HING WAH

    Abstract: The present invention describes a novel method of fabricating nano-resistors (22) which allows full integration with standard CMOS fabrication process. The resistor comprises long and thin nano-structures as resistive element. It is formed by conductive nano-spacers (18B) using oxide (16) as mould on insulating layer. An embodiment of such structure is polysilicon nano-structures doped or implanted with n-type or p-type ions (20) to improve material conductance. The electrical properties of the device will change with respect to the dimension of these nano-structures. Resistors with polysilicon nano-structures down to 10 nm can be produced with resulting measured resistance in the MOhm scale.

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