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公开(公告)号：JP2003234506A
公开(公告)日：2003-08-22
申请号：JP2003020947
申请日：2003-01-29
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EISERT DOMINIK , KAISER STEPHAN , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device that uses a nitride-compound semiconductor as a base, has an improved contact metallizing section, and emits radiations. SOLUTION: In the semiconductor device that is equipped with a semiconductor body (1) having a nitride-compound semiconductor, arranges a contact metallizing section (3) on a surface (2) of the semiconductor body, and emits radiations, the contact metallizing section (3) can transmit radiations, and is at least partially covered with a conductive contact layer (4) that can transmit radiations. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003086838A
公开(公告)日：2003-03-20
申请号：JP2002236672
申请日：2002-08-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EISERT DOMINIK , STRAUS UWE , BAUR JOHANNES
Abstract: PROBLEM TO BE SOLVED: To provide an light emitting device with its light emitting efficiency further improved. SOLUTION: A window is equipped with a side face having a 1st partial area vertical to a primary surface and a 2nd partial area oblique to the same. The 1st area forms an edge together with the primary surface and is away from the primary surface by a distance d changing gradually into the 2nd area, and the boundary of the radially formed plane in its lateral direction is positioned with a distance l from the edge formed by the 1st area and the primary surface. In this context, l>=d/tanβ, wherein β=arccos (n1 /n2 ), wherein n1 is the refraction factor of the multilayer structure, n2 is the refraction factor of the window, and n1
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13.发明申请
公开(公告)号：WO0139282A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004089
申请日：2000-11-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
Abstract translation: 具有多量子阱结构的光学半导体器件堆叠在阱层和不同类型的半导体层的势垒层交替层叠，所述阱层（6A）的基础上，具有第一电子能量和势垒层的氮化物半导体材料的第一组合物（6b）中的一个 的氮化物半导体材料的第二组合物被提供相对于所述第一电子能量更高的电子能量，其中一个辐射量子阱有源层（图6c）的下游布置为在生长的方向，为此，上游基本上无辐射阱层（6a）和阻挡层（6b）的形成的超晶格看到 ，
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14.发明专利
公开(公告)号：DE112013004802A5
公开(公告)日：2015-07-23
申请号：DE112013004802
申请日：2013-09-02
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STOLL ION , EISERT DOMINIK , GÖÖTZ BRITTA , SCHULZ ROBERT
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公开(公告)号：DE50115638D1
公开(公告)日：2010-11-04
申请号：DE50115638
申请日：2001-07-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER , JACOB ULRICH , PLASS WERNER , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH
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Patent Agency Ranking
公开(公告)号：DE10203809B4
公开(公告)日：2010-05-27
申请号：DE10203809
申请日：2002-01-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER , KAISER STEPHAN
Abstract: A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.
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公开(公告)号：DE50114925D1
公开(公告)日：2009-07-16
申请号：DE50114925
申请日：2001-07-10
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EISERT DOMINIK , HAERLE VOLKER , STRAUSS UWE , ZEHNDER ULRICH
Abstract: Recesses interrupt an active layer on a semiconductor chip to improve the coupling out of light. As a result, side faces of the active layer appear, as seen from a light-generating point, at a large solid angle and the paths of light in the active layer are shortened.
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公开(公告)号：DE10139798B4
公开(公告)日：2006-08-03
申请号：DE10139798
申请日：2001-08-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BAUR JOHANNES , EISERT DOMINIK , STRAUS UWE
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公开(公告)号：DE10254457A1
公开(公告)日：2003-07-24
申请号：DE10254457
申请日：2002-11-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： PLOESL ANDREAS , HAHN BERTHOLD , EISERT DOMINIK , KAISER STEPHAN
Abstract: Semiconductor layers are fabricated by applying a useful layer containing semiconductor layer(s) to a carrier, applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer at a joining temperature, and mechanically stripping away the carrier. Fabrication of semiconductor layers involves applying a useful layer containing semiconductor layer(s) to a carrier (1), applying an auxiliary carrier to the side of the useful layer remote from the carrier with a connecting layer disposed between the auxiliary carrier and useful layer (2) at a joining temperature, and mechanically stripping away the carrier at temperature greater than or equal to the joining temperature and less than a melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier (3) is stripped away from the carrier.
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公开(公告)号：WO2004032247A3
公开(公告)日：2004-09-02
申请号：PCT/DE0302954
申请日：2003-09-05
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , EISERT DOMINIK , ILLEK STEFAN , SCHMID WOLFGANG
Inventor： EISERT DOMINIK , ILLEK STEFAN , SCHMID WOLFGANG
CPC classification number: H01L33/20 , H01L23/3677 , H01L24/29 , H01L24/83 , H01L24/95 , H01L2224/29014 , H01L2224/29124 , H01L2224/29164 , H01L2224/29169 , H01L2224/83203 , H01L2924/12042 , H01L2924/351 , H01L2924/3512 , H01L2924/00
Abstract: The aim of the invention is to reduce or compensate thermal stress created within a semiconductor component. Said aim is achieved by a semiconductor component comprising a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact points, and a vertically or horizontally structured carrier substrate, and a method for producing a semiconductor component. Thermal stress is created by changes in temperature during processing and operation as well as due to the different coefficients of expansion of the semiconductor and the carrier substrate. The inventive carrier substrate is structured in such a way that thermal stress is reduced or compensated to a degree that is sufficient for the component not to break down.
Abstract translation: 为了减少或补偿组件中的热应力，具有半导体发光层或发光半导体元件，两个接触点和一个垂直或水平结构的载体基材，以及一种制造半导体器件的方法的半导体器件的开发。 的热应力引起的，因为半导体的膨胀和载体基板的不同的系数的处理和操作过程中的温度变化和。 所述载体基片的结构，使得热应力充分地减少或补偿在该组件不沉淀。
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