Light-emitting semiconductor chip and method for manufacturing semiconductor chip of this type
    1.
    发明专利
    Light-emitting semiconductor chip and method for manufacturing semiconductor chip of this type 审中-公开
    用于制造这种类型的半导体芯片的发光半导体芯片和方法

    公开(公告)号:JP2005244245A

    公开(公告)日:2005-09-08

    申请号:JP2005054738

    申请日:2005-02-28

    CPC classification number: H01L33/44

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor chip 1 which comprises an array 3 of semiconductor layers containing an activity layer 2 which forms electromagnetic radiation, and a passivation layer 12, disposed in the exit side of the array of the layers and which enables radiation emission to be adjusted and set to a target range during the manufacturing period to be more simple and lower cost than in the conventional technology. SOLUTION: The passivation layer has partially absorbing properties, and the transmittance to the radiation emitted from the array of the semiconductor layers during the operation of the semiconductor chip, can be adjusted during the manufacturing period of the passivation layer. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题:提供一种发光半导体芯片1,其包括包含形成电磁辐射的活性层2的半导体层阵列3和钝化层12,该钝化层设置在阵列的出射侧 使得能够在制造期间将辐射调节和设定为目标范围的层比现有技术更简单且更低的成本。 解决方案:钝化层具有部分吸收特性,并且可以在钝化层的制造周期期间调整在半导体芯片的操作期间从半导体层的阵列发射的辐射的透射率。 版权所有(C)2005,JPO&NCIPI

    METHOD FOR STRUCTURING AT LEAST ONE LAYER AND ELECTRIC COMPONENT WITH STRUCTURES FROM SAID LAYER
    5.
    发明申请
    METHOD FOR STRUCTURING AT LEAST ONE LAYER AND ELECTRIC COMPONENT WITH STRUCTURES FROM SAID LAYER 审中-公开
    方法构建至少一层和电气构件技术结构从层

    公开(公告)号:WO2005103818A3

    公开(公告)日:2006-02-23

    申请号:PCT/DE2005000736

    申请日:2005-04-21

    CPC classification number: H01L21/32139 H01L2924/0002 H01L2924/00

    Abstract: The invention provides a method for producing at least one structured layer (10A), whereby a mask structure (20), with a first (20A) and second structure (20B), is produced on a layer (10), located on a substrate (5). By means of said mask structure (20), the first structure (20A) and the second structure (20B) respectively are transferred onto the layer (10) by isotropic structuring methods and anisotropic structuring methods. The inventive method allows the production of two structures (20A, 20B) in at least one layer with only one mask structure.

    Abstract translation: 本发明提供了一种用于至少产生其中的掩模结构产生(20),其具有在衬底上的第一(20A)和第二结构(20B)(5)位于层(10)的图案化层(10A), 是。 通过该掩模图案(20)穿过其中,所述第一结构(20A)通过各向同性结构化方法的装置和由在该层上的各向异性图案化工艺的装置,所述第二结构(20B)(10)被发送。 本发明的方法允许与单个掩模结构生产中的至少一个层的两个结构(20A,20B)的。

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