Abstract:
PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor chip 1 which comprises an array 3 of semiconductor layers containing an activity layer 2 which forms electromagnetic radiation, and a passivation layer 12, disposed in the exit side of the array of the layers and which enables radiation emission to be adjusted and set to a target range during the manufacturing period to be more simple and lower cost than in the conventional technology. SOLUTION: The passivation layer has partially absorbing properties, and the transmittance to the radiation emitted from the array of the semiconductor layers during the operation of the semiconductor chip, can be adjusted during the manufacturing period of the passivation layer. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor chip suitable for high radiation output so that output efficiency of radiation generated in the semiconductor chip is improved. SOLUTION: At least one vertical surface of a semiconductor chip, which is used as an output surface, is longer than a lateral surface in an extending direction of an active zone. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device capable of improving quantum efficiency. SOLUTION: An indium content of at least one well layer is increased in a step of growing the well layer. In the optical semiconductor device, the well layer has a first composition based on a nitride semiconductor material with first electron energy, and a barrier layer has a second composition based on the nitride semiconductor material with second electron energy higher than the first electron energy. A beam activated quantum well layer is grown on the barrier layer. Non-radiative well layers and the barrier layers form a superlattice for the beam activated quantum well layer. The layer thickness of the beam activated quantum well layer is larger than the layer thickness of the well layer of the superlattice. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
The invention relates to a radiation-emitting semiconductor component with an improved radiation yield and to a method for producing the same. The semiconductor element has a multilayer structure (2) with an active layer (3) for generating the radiation within the multilayer structure (2) and a window (1) with a first and a second primary surface. The multilayer structure adjoins the first primary surface (5) of the window (1). At least one recess is formed in the window (1), starting from the second primary surface (6), for increasing the radiation yield. The recess preferably has a trapezoidal cross-section, which tapers towards the first primary surface (5) and can be produced, for example, by sawing into the window.
Abstract:
The invention provides a method for producing at least one structured layer (10A), whereby a mask structure (20), with a first (20A) and second structure (20B), is produced on a layer (10), located on a substrate (5). By means of said mask structure (20), the first structure (20A) and the second structure (20B) respectively are transferred onto the layer (10) by isotropic structuring methods and anisotropic structuring methods. The inventive method allows the production of two structures (20A, 20B) in at least one layer with only one mask structure.
Abstract:
A light-emitting chip (3) comprises a lens-shaped output window (4), the base surface (5) of which is provided with a mirror surface (6). A sequence of layers (9) is arranged on an output surface (7) of the output window (4) with a photon-emitting p-n junction (10). The photons emitted by the p-n junction are reflected at the mirror surface (6) and can leave the output window (4) through the output surface (7).
Abstract:
The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.