SEMICONDUCTOR LASER DEVICES
    11.
    发明专利

    公开(公告)号:GB2128402B

    公开(公告)日:1986-03-05

    申请号:GB8326055

    申请日:1983-09-29

    Applicant: SONY CORP

    Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

    Semiconductor lasers
    12.
    发明专利

    公开(公告)号:GB2163288A

    公开(公告)日:1986-02-19

    申请号:GB8518182

    申请日:1985-07-18

    Applicant: SONY CORP

    Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.

    SEMICONDUCTOR LASER DEVICES
    13.
    发明专利

    公开(公告)号:GB2128402A

    公开(公告)日:1984-04-26

    申请号:GB8326055

    申请日:1983-09-29

    Applicant: SONY CORP

    Abstract: A semiconductor laser device having a stripe light emission region formed in an active layer, a bent portion formed in the active layer on a light end portion of the light emission region in a range of approximately the width of the light emission region, and a flat portion formed in the active layer the width of which is made larger than that of the light emission region inside of the end portion of the light emission region.

    BIOASSAY METHOD, BIOASSAY DEVICE, AND BIOASSAY SUBSTRATE

    公开(公告)号:AU2003235387A1

    公开(公告)日:2003-12-02

    申请号:AU2003235387

    申请日:2003-05-21

    Applicant: SONY CORP

    Abstract: Disclosed is a bioassay method in which, by controlling the electric field formation in the reaction region where an interaction between substances, such as a hybridization, is performed, the efficiency of the interaction can be improved. Also disclosed is a bioassay apparatus in which the method can be favorably carried out. In the method, an interaction between substances is detected by a detecting element 1 (10), the detecting element including at least a detection surface S (S') which is surface-treated for immobilizing a detecting substance D, a reaction region R (R') which provides a field for interaction between the detecting substance D immobilized on the detection surface S (S') and a target substance T, and an electric field-forming means E which forms an electric field in the reaction region R (R') by applying a potential difference in the reaction region R (R'), and the method includes at least a step of turning on/off the electric field formation by the electric field-forming means E at a predetermined timing.

Patent Agency Ranking