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    INTEGRATED INK JET PRINTING HEAD AND ITS PRODUCTION
    11.
    发明专利
    INTEGRATED INK JET PRINTING HEAD AND ITS PRODUCTION 失效

    公开(公告)号：JPH1170659A

    公开(公告)日：1999-03-16

    申请号：JP18305098

    申请日：1998-06-29

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  MAGGI RICCARDO

    IPC: B41J2/05 ,  B41J2/125 ,  B41J2/14 ,  B41J2/16

    Abstract: PROBLEM TO BE SOLVED: To reduce power consumption and the stress received by a heater element to extend the life of the heater element and to check the function of the constitutional elements thereof. SOLUTION: An ink jet printing head 30 has a mini-gun and a sensor integrated on a single crystal silicon wafer 1 and the mini-gun is formed of an ink chamber 21 and an orifice 23 communicating with the ink chamber 21 and the sensor includes a resistance element 4 provided under the ink chamber 21. The resistance element 4 depends on the pressure acting on the element, 4 and receives repulsive motion when the mini-gun ejects ink droplets to be changed in its pressure and resistance and this resistance change is detected by a proper circuit for specifying the presence of the ejection of ink droplets and the ejection time of ink droplets.

    INTEGRATED DEVICE INCLUDING ELECTROMECHANICAL MICROMINIATURE STRUCTURE BODY ACCOMPANIED WITH NO RESIDUAL STRESS AND MANUFACTURE THEREOF
    14.
    发明专利
    INTEGRATED DEVICE INCLUDING ELECTROMECHANICAL MICROMINIATURE STRUCTURE BODY ACCOMPANIED WITH NO RESIDUAL STRESS AND MANUFACTURE THEREOF 失效

    公开(公告)号：JP2000233400A

    公开(公告)日：2000-08-29

    申请号：JP2000031704

    申请日：2000-02-09

    Applicant: ST MICROELECTRONICS SRL

    Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  LORA CASTOLDI ,  MARCO FERUREA

    IPC: B81B3/00 ,  G01P15/08

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an microminiature integrated structural body capable of removing or reducing residual stress considerably. SOLUTION: A sacrifice region 21 is formed on a substrate 20 of a semiconductor material, an epitaxial layer 25 grows, then a stress release groove 31 is formed by surrounding a region 33 of the epitaxial layer 25 in which an electromechanical microminiature integrated structural body is formed, and then a wafer 28 is heat-treated to release residual stress. In succession, a seal region of a dielectric material is filled in the stress release groove 31 to form an integrated microminiature constituting element. Finally, a groove defining the ultra-micro structural body is formed on an inner side of a region surrounded by the seal region, then the sacrifice region is removed, and the microminiature integrated structual body without residual stress is formed.

    INTEGRATED DEVICE AND MANUFACTURE THEREOF
    15.
    发明专利
    INTEGRATED DEVICE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JP2000133616A

    公开(公告)日：2000-05-12

    申请号：JP29937499

    申请日：1999-10-21

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  MASTROMATTEO UBALDO

    IPC: H01L21/28 ,  H01L23/482 ,  H01L23/522 ,  H01L29/84

    Abstract: PROBLEM TO BE SOLVED: To easily and safely form a suspension connection line in an integrated device. SOLUTION: This integrated device contains an epitaxial layer 22 where the first and the second regions to be separated at least by an air gap 24 are formed. The suspension mass of an accelerometer is formed. A bridge element 26 is extended to the air gap 24, and the element 26 has an electric suspension connection line 28, which electrically connects the first and the second regions 23 and 45, and the protective structure 29 made of etching resist material and surrounding the electric connection line 28 on the whole side face. The protective structure 29 is formed by the silicon nitride lower part 31a and a silicon carbide upper part 32a, and an electric line 28 is surrounded by the upper part and the side face of the silicon carbide.

    INTEGRATED TYPE DEVICE CONTAINING SEMICONDUCTOR MATERIAL MICRO-ACTUATOR
    16.
    发明专利
    INTEGRATED TYPE DEVICE CONTAINING SEMICONDUCTOR MATERIAL MICRO-ACTUATOR 失效

    公开(公告)号：JP2000082207A

    公开(公告)日：2000-03-21

    申请号：JP20756799

    申请日：1999-07-22

    Applicant: ST MICROELECTRONICS SRL

    Inventor： CINI DARIO ,  VIGNA BENEDETTO

    IPC: G11B5/56 ,  G11B5/596 ,  G11B21/02 ,  H02N1/00

    Abstract: PROBLEM TO BE SOLVED: To reduce the occupancy area of a micro-actuator and to prevent the weight increase in a suspension unit in the case of the using it to start a read/write head. SOLUTION: This integrated device is provided with a micro-actuator 1' containing an electrostatic coupled external stator and an internal rotor, the internal rotor contains spring like mess 6 and plural movable arms prolonging from it in the radial direction, and the external stator contains plural first fixed arms prolonging for the spring like mass 6 in the radial direction and facing oppositely to the movable arms. Then, the micro-actuator 1' is connected to a drive means 30 for fixed arms and is connected to a measurement means 32 for measuring the position of the internal rotor in relation with the external stator and a capacitive non-connection means arranged between the drive means 30 and the measurement means 32 contains at least one of the fixed arm and the movable arm.

    INTEGRATED MICROACTUATOR
    17.
    发明专利
    INTEGRATED MICROACTUATOR 失效

    公开(公告)号：JP2000067539A

    公开(公告)日：2000-03-03

    申请号：JP21666599

    申请日：1999-07-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  ZERBINI SARAH ,  SASSOLINI SIMONE ,  MENESCARDI CARLO

    IPC: G11B5/596 ,  G11B21/02 ,  G11B21/10 ,  H02N1/00

    Abstract: PROBLEM TO BE SOLVED: To prevent a microactuator from external dust by providing an actuator element being a different body and a transmission structure to be arranged between the actuator element and a motor element and allowing the transmission structure to transmit the motion of the motor element to a motion corresponding to the actuator element to prevent damage and static electric interference. SOLUTION: A microactuator 30 is integrated with the die 31 firmly fixed to gymbals. The microactuator 30 is provided with a motor element 32, an actuator element 34 which is separated from the motor element 32 and also to which R/W transducers 6 are firmly fixed and a transmission structure 36 which is arranged between the motor element 32 and the actuator element 34. The transmission structure 36 transmits the rotational motion of the motor element 32 to the actuator element 34 and the R/W transducers 6 fixed to the element 34. The motor element 32 is provided with the stator 38 of an inner side which is integrated with the die 31 and the rotor 40 of an outer side. The rotor 40 is connected to the actuator element 34 with the transmission structure 36.

    MANUFACTURE OF INTEGRATED MICROSCOPIC STRUCTURE OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL
    18.
    发明专利
    MANUFACTURE OF INTEGRATED MICROSCOPIC STRUCTURE OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIAL 失效

    公开(公告)号：JPH11102893A

    公开(公告)日：1999-04-13

    申请号：JP21667698

    申请日：1998-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MURARI BRUNO ,  FERRARI PAOLO ,  VIGNA BENEDETTO

    IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  H01L21/3063 ,  H01L21/764 ,  H01L29/84

    Abstract: PROBLEM TO BE SOLVED: To reduce the cost of manufacturing without the possibility of breaking an erected structure by a method, wherein a sacrificial region of porous material is formed in the main body of single-crystal semiconductor material, and the sacrificial region is removed through the aperture of the main body. SOLUTION: A part of a substrate 2 on the lower part of the aperture of a mask is converted into porous silicon from single-crystal silicon when anodic oxidation treatment is performed, and a porous sacrificial region is formed. subsequently, the mask is removed, and a P-type epitaxial layer 7 is formed on a wafer. The epitaxial layer 7 is plasma etched using a carbide mask 25 having the aperture which is slightly larger than the resist mask, and a groove 27 extending to the porous sacrificial region from the surface of the epitaxial layer 7 is formed. At this time, etching is on the porous sacrificial region stopped automatically. The silicon porous sacrificial region is oxidized through the groove 27, and the first oxidative sacrificial region 28 is formed. Lastly, the oxidative sacrificial region 28 is removed in hydrofluoric acid, and after the mask 25 has been removed, a erected structure 30 is obtained on a gap 31 and is separated by groove 32.

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