公开(公告)号：FR2964789A1

公开(公告)日：2012-03-16

申请号：FR1003633

申请日：2010-09-10

Applicant: COMMISSARIAT ENERGIE ATOMIQUE ,  ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： CASSET FABRICE ,  CADIX LIONEL ,  COUDRAIN PERCEVAL ,  FARCY ALEXIS ,  CHAPELON LAURENT LUC ,  FELK YACINE ,  ANCEY PASCAL

IPC: H01L23/495 ,  H01L21/027 ,  H01L21/441

Abstract: Le circuit intégré comporte un substrat de support (1) ayant des première et seconde faces principales (2a, 2b) opposées. Une cavité traverse le substrat de support (1) et relie les première et seconde faces principales (2a, 2b). Le circuit intégré comporte un dispositif à élément mobile (5) dont l'élément mobile (6) et un couple d'électrodes (7) associées sont inclus dans une cavité. Un nœud d'ancrage de l'élément mobile (6) est localisé au niveau de la première face principale (2a). Le circuit intégré comprend une première puce (3) élémentaire disposée au niveau de la première face principale (2a) et connectée électriquement au dispositif à élément mobile (5).

公开(公告)号：FR2905207B1

公开(公告)日：2009-01-30

申请号：FR0653487

申请日：2006-08-28

Applicant: ST MICROELECTRONICS SA

Inventor： VOLATIER ALEXANDRE ,  ANCEY PASCAL ,  DUBUS BERTRAND

IPC: H03H9/58

Abstract: The filter (100) has an acoustic resonator (108) comprising a resonant layer (110) that is placed between electrodes (112, 114). An acoustic resonator (118) comprises a resonant layer (120) that is placed between electrodes (122, 124), where the resonator (118) is acoustically coupled with the resonator (108). One of the electrodes (114, 122) is placed between the layers (110, 120), where the layers are made of an electrostrictive material. An acoustic insulation unit (104) is provided such that the resonator (108) is placed between the resonator (118) and the unit (104). An independent claim is also included for a signal transmission and/or reception device comprising an antenna connected to a switchable filter.

公开(公告)号：DE602005001245T2

公开(公告)日：2008-01-24

申请号：DE602005001245

申请日：2005-09-15

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

公开(公告)号：FR2890229B1

公开(公告)日：2007-11-09

申请号：FR0552645

申请日：2005-08-31

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： BOUCHE GUILLAUME ,  CASSET FABRICE ,  ANCEY PASCAL

IPC: H01G5/16 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L29/92

公开(公告)号：FR2875339B1

公开(公告)日：2006-12-08

申请号：FR0452070

申请日：2004-09-16

Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

IPC: H01L29/94 ,  B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01L29/84

Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

公开(公告)号：DE60306196D1

公开(公告)日：2006-07-27

申请号：DE60306196

申请日：2003-11-27

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  CARUYER GREGORY ,  ANCEY PASCAL

IPC: H03H9/05 ,  H01L23/14 ,  H01L27/20 ,  H01L41/04 ,  H03H9/17 ,  H03H9/58

公开(公告)号：FR2848339B1

公开(公告)日：2005-08-26

申请号：FR0215370

申请日：2002-12-05

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  ANCEY PASCAL ,  FROMENT BENOIT

IPC: B81B7/00 ,  H01S5/022 ,  H01L23/31 ,  B81C3/00

Abstract: The adhesion of a first element (1), of which at least a part of the surface is coated with silicon, on a second element (2), of which at least a part of the surface is coated with nickel, incorporates an adhesion stage effected by NiSi welding at greater than 250degreesC, the rugosity between the two parts of the surface of the two elements being less than 1 micron. An Independent claim is also included for an integrated circuit incorporating two elements joined by NiSi welding.

公开(公告)号：FR2848036B1

公开(公告)日：2005-08-26

申请号：FR0214967

申请日：2002-11-28

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  CARUYER GREGORY ,  ANCEY PASCAL

IPC: H01L23/14 ,  H01L27/20 ,  H01L41/04 ,  H03H9/05 ,  H03H9/17 ,  H03H9/58

公开(公告)号：FR2853473B1

公开(公告)日：2005-07-01

申请号：FR0304039

申请日：2003-04-01

Applicant: ST MICROELECTRONICS SA

Inventor： BOUCHE GUILLAUME ,  SMEARS NICK ,  ANCEY PASCAL ,  CARUYER GREGORY

IPC: H01L27/20 ,  H03H9/15 ,  H03H9/58

Abstract: The electronic component has two resonators (3, 4) that are disposed on an upper surface of a silicon substrate. Each resonator has a lower electrode in contact with the upper surface, a piezoelectric active component disposed on the lower electrode and an upper electrode disposed on the active component. The respective lower electrodes are made of aluminum and molybdenum, to obtain frequencies at different resonance. Independent claims are also included for the following (a) an integrated circuit including the electronic component (b) a hybrid circuit including the electronic component (c) a filter comprising a electronic component (d) a process of fabrication of the electronic component.

公开(公告)号：FR2833106B1

公开(公告)日：2005-02-25

申请号：FR0115594

申请日：2001-12-03

Applicant: ST MICROELECTRONICS SA

Inventor： FARCY ALEXIS ,  CORONEL PHILIPPE ,  ANCEY PASCAL ,  TORRES JOAQUIM

IPC: B81B7/00 ,  B81C3/00 ,  H01L21/50 ,  H01L21/56 ,  B81C1/00

Abstract: The circuit includes a first semiconductor substrate supporting the electronic circuit, and a second substrate carrying an electromechanical component. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component. The first phase of manufacture includes forming the semiconductor chip (PC) within a first substrate, and forming a cavity in the upper surface of this substrate to accommodate an auxiliary component. A wall remains around the cavity, leaving the cavity as a well. The second phase includes formation of the auxiliary component (CAX) on a second semiconductor substrate (SB2), separate from the first. The second substrate is then turned over and applied to the first substrate as a lid with the auxiliary component hanging within the cavity of the first substrate. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component.