TWO-WAFER MEMS IONIZATION DEVICE
    11.
    发明申请
    TWO-WAFER MEMS IONIZATION DEVICE 有权
    双波长MEMS离子化装置

    公开(公告)号:US20130168781A1

    公开(公告)日:2013-07-04

    申请号:US13338425

    申请日:2011-12-28

    Abstract: A microelectromechanical system (MEMS) assembly includes at least one emission source; a top wafer having a plurality of side walls and a generally horizontal portion, the horizontal portion having a thickness between a first side and a directly opposed second side, at least one window in the horizontal portion extending between the first and second sides and a transmission membrane across the at least one window; and a bottom wafer having a first portion with a first substantially planar surface, an intermediate surface directly opposed to the first substantially planar surface, a second portion with a second substantially planar surface, the at least one emission source provided on the second substantially planar surface; where the top wafer bonds to the bottom wafer at the intermediate surface and encloses a cavity within the top wafer and the bottom wafer.

    Abstract translation: 微机电系统(MEMS)组件包括至少一个发射源; 具有多个侧壁和大致水平部分的顶部晶片,所述水平部分具有在第一侧和直接相对的第二侧之间的厚度,所述水平部分中的至少一个窗口在所述第一侧和第二侧之间延伸, 膜穿过至少一个窗口; 以及底部晶片,其具有第一部分和第二基本上平坦的表面,与所述第一基本上平坦的表面直接相对的中间表面,具有第二基本平坦表面的第二部分,所述至少一个发射源设置在所述第二基本上平坦的表面上 ; 其中顶部晶片在中间表面处接合到底部晶片并且在顶部晶片和底部晶片内包围空腔。

    SOURCE OF A COLLIMATED ELECTRONIC BEAM WITH COLD CATHODE
    13.
    发明申请
    SOURCE OF A COLLIMATED ELECTRONIC BEAM WITH COLD CATHODE 审中-公开
    具有冷阴极的收缩电子束的源

    公开(公告)号:WO2010139740A3

    公开(公告)日:2011-01-27

    申请号:PCT/EP2010057734

    申请日:2010-06-02

    Abstract: The invention relates in general terms to the field of "cold cathode" electronic cathodes including an electrically conductive flat substrate (2) and an emitter comprising a tip (1) with a micrometric or nanometric diameter arranged vertically above the surface of the substrate. The cathode according to the invention comprises a single annular electrode (6) electrically insulated from the substrate by an insulating layer (3) and centred on the emitter, the source comprising a means for applying a potential difference of several dozen volts between the substrate and the annular electrode, enough to cause the emission of an electronic beam from the tip of the emitter, the annular electrode being large enough to focus said electronic beam. A source of an electronic beam can comprise a plurality of identical cathodes arranged in a specific pattern.

    Abstract translation: 本发明一般涉及“冷阴极”电子阴极领域,包括导电平面基底(2)和发射体,其包括垂直于基底表面布置的具有微米或纳米直径的尖端(1)。 根据本发明的阴极包括通过绝缘层(3)与衬底电绝缘并以发射器为中心的单个环形电极(6),源极包括用于在衬底和衬底之间施加几十伏特的电位差的装置 环形电极足以引起来自发射器尖端的电子束的发射,环形电极足够大以聚焦所述电子束。 电子束的源可以包括以特定图案布置的多个相同的阴极。

    SOURCE DE FAISCEAU ELECTRONIQUE COLLIMATE A CATHODE FROIDE
    14.
    发明申请
    SOURCE DE FAISCEAU ELECTRONIQUE COLLIMATE A CATHODE FROIDE 审中-公开
    具有冷阴极的收缩电子束的源

    公开(公告)号:WO2010139740A2

    公开(公告)日:2010-12-09

    申请号:PCT/EP2010/057734

    申请日:2010-06-02

    Abstract: Le domaine général de l'invention est celui des cathodes électroniques de type « cathode froide » comprenant un substrat plan (2) électriquement conducteur et un émetteur comportant une pointe (1) de diamètre micrométrique ou nanométrique disposée verticalement au-dessus de la surface du substrat. La cathode selon l'invention comporte une et une seule électrode annulaire (6) isolée électriquement du substrat par une couche d'isolant (3) et centrée sur l'émetteur, la source comportant des moyens permettant d'appliquer une différence de potentiel de plusieurs dizaines de volts entre le substrat et l'électrode annulaire, suffisante pour provoquer l'émission d'un faisceau électronique à la pointe de l'émetteur, l'électrode annulaire étant de dimension suffisante pour assurer la focalisation dudit faisceau électronique. Une source de faisceau électronique peur comporter une pluralité de cathodes identiques agencées selon un motif particulier.

    Abstract translation: 本发明一般涉及“冷阴极”电子阴极领域,包括导电平面基底(2)和发射体,其包括垂直于基底表面布置的具有微米或纳米直径的末端(1)。 根据本发明的阴极包括通过绝缘层(3)与衬底电绝缘并以发射器为中心的单个环形电极(6),源极包括用于在衬底和衬底之间施加几十伏特的电位差的装置 环形电极足以引起来自发射器尖端的电子束的发射,环形电极足够大以聚焦所述电子束。 电子束的源可以包括以特定图案布置的多个相同的阴极。

    Particle sources and methods for manufacturing the same
    20.
    发明授权
    Particle sources and methods for manufacturing the same 有权
    粒子来源及其制造方法

    公开(公告)号:US09017562B2

    公开(公告)日:2015-04-28

    申请号:US13726971

    申请日:2012-12-26

    Inventor: Huarong Liu

    Abstract: The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    Abstract translation: 本公开提供了一种制造颗粒源的方法,包括:将金属丝放置在真空中,引入活性气体和催化剂气体,调节金属丝的温度,以及向金属丝施加正高电压V以使 在金属线的表面处的活性气体,以在金属线的头部的外周表面上产生进行场诱导化学蚀刻(FICE)的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场,使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后,引起FICE和场蒸发之间的相互调节,直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时,停止FICE和场蒸发。

Patent Agency Ranking