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公开(公告)号：US20170275153A1
公开(公告)日：2017-09-28
申请号：US15080356
申请日：2016-03-24
Inventor： Chih-Ming Chen , Ping-Yin Liu , Chung-Yi Yu , Yeur-Luen Tu
CPC classification number: B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/052 , B81C1/00269 , B81C1/00357 , B81C2201/013 , B81C2203/0109 , B81C2203/019 , B81C2203/036 , H01L24/03 , H01L24/09 , H01L2224/02163 , H01L2224/05082 , H01L2224/05109 , H01L2224/05117 , H01L2224/05124 , H01L2224/05138 , H01L2224/05144 , H01L2224/05147 , H01L2924/01014 , H01L2924/01032 , H01L2924/1461
Abstract: An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.
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公开(公告)号：US20170235124A1
公开(公告)日：2017-08-17
申请号：US15583355
申请日：2017-05-01
Applicant: InPhenix, Inc.
Inventor： Mohammad Kamal , Tongning Li , David Eu , Qinian Qi
CPC classification number: G02B26/001 , B81C1/00317 , B81C2201/013 , G02B1/11 , G02B1/12 , H01L33/46 , H01L39/2467 , H01L2924/1461 , H01S3/08027 , H01S3/083 , H01S3/105 , H01S3/1062 , H01S5/141 , H01S5/18366
Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.
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203.发明申请公开(公告)号：US20170231518A1
公开(公告)日：2017-08-17
申请号：US15501426
申请日：2015-08-07
Applicant: The Regents of the University of California
Inventor： Shadi A. DAYEH , Farid AZZAZY , Sang Heon LEE
IPC: A61B5/0478 , B81C1/00 , B81B1/00
CPC classification number: A61B5/0478 , B81B1/00 , B81B2201/0292 , B81B2203/0361 , B81B2203/04 , B81C1/00111 , B81C2201/013
Abstract: A preferred conformal penetrating multi electrode array includes a plastic substrate that is flexible enough to conform to cortical tissue. A plurality of penetrating semiconductor micro electrodes extend away from a surface of the flexible substrate and are stiff enough to penetrate cortical tissue. Electrode lines are encapsulated at least partially within the flexible substrate and electrically connected to the plurality of penetrating semiconductor microelectrodes. The penetrating semiconductor electrodes preferably include pointed metal tips. A preferred method of fabrication permits forming stiff penetrating electrodes on a substrate that is very flexible, and providing electrical connection to electrode lines within the substrate.
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公开(公告)号：US09718680B2
公开(公告)日：2017-08-01
申请号：US14738645
申请日：2015-06-12
Applicant: InvenSense, Inc.
Inventor： Daesung Lee , Jongwoo Shin , Jong Il Shin , Peter Smeys
IPC: H01L21/768 , B81C1/00 , H01L23/522
CPC classification number: B81C1/00301 , B81C2201/013 , B81C2203/036 , H01L21/76877 , H01L21/76898 , H01L23/5226
Abstract: A method for forming a MEMS device is disclosed. The MEMS device includes a MEMS substrate and a base substrate. The MEMS substrate, where includes a handle layer, a device layer and an insulating layer in between. The method includes the sequential steps of: providing a standoff on the device layer; etching a via through the device layer and the insulating layer; providing a contact layer within the via, wherein the contact layer provides electrical connection between the device layer and the handle layer; providing a bonding layer on the standoff; and bonding the bonding layer to pads on the base substrate.
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公开(公告)号：US20170166443A1
公开(公告)日：2017-06-15
申请号：US15197418
申请日：2016-06-29
Applicant: HYUNDAI MOTOR COMPANY
Inventor： Ilseon YOO
IPC: B81C1/00
CPC classification number: B81C1/00269 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2203/04 , B81C2201/013 , B81C2201/0159 , B81C2203/0118 , B81C2203/031 , B81C2203/035 , B81C2203/036
Abstract: A manufacturing method of a MEMS sensor includes forming a first substrate, wherein the first substrate includes a lower electrode provided at one surface thereof, forming a second substrate, wherein the second substrate includes a first concave-convex portion provided at one surface thereof, first-bonding one surface of the first substrate and one surface of the second substrate to face each other, forming a third substrate, wherein the third substrate includes an upper electrode provided at one surface thereof, second-bonding another surface of the second substrate and one surface of the third substrate to face each other, and forming an electrode line on another surface of the third substrate to be connected to the lower electrode and the upper electrode.
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Patent Agency Ranking
公开(公告)号：US20170159194A1
公开(公告)日：2017-06-08
申请号：US15438074
申请日：2017-02-21
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Peter Mardilovich , Qingqiao Wei , Irina Nikolaevna Milonova , Anthony M. Fuller
CPC classification number: C25D1/006 , B81C1/00031 , B81C2201/013 , B81C2201/0197 , C25D11/045 , C25D11/08 , C25D11/10 , C25D11/12 , C25D11/24 , C25D11/26
Abstract: In an example of a method for making a nano-structure, an aluminum layer is partially anodized to form a porous anodic alumina structure. The aluminum layer is positioned on an oxidizable material layer. The porous anodic alumina structure is exposed to partial anisotropic etching to form tracks within the porous anodic alumina structure. A remaining portion of the aluminum layer is further anodized to form paths where the tracks are formed. The oxidizable material layer is anodized to from an oxide, where the oxide grows through the paths formed within the porous anodic alumina structure to form a set of super nano-pillars.
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207.发明申请公开(公告)号：US20170158490A1
公开(公告)日：2017-06-08
申请号：US15437727
申请日：2017-02-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. JAHNES , Anthony K. STAMPER
CPC classification number: B81B3/0072 , B81B3/0021 , B81B2201/01 , B81B2201/014 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81C1/0015 , B81C1/00365 , B81C1/00476 , B81C1/00619 , B81C1/00626 , B81C1/00666 , B81C2201/0109 , B81C2201/013 , B81C2201/0167 , B81C2201/017 , B81C2203/0136 , B81C2203/0172 , G06F17/5068 , G06F17/5072 , H01H1/0036 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/1136 , H01L2924/0002 , Y10S438/937 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49105 , Y10T29/49121 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/5313 , H01L2924/00
Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
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208.发明申请公开(公告)号：US20170121172A1
公开(公告)日：2017-05-04
申请号：US15405911
申请日：2017-01-13
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Jia Jie Xia , Nagarajan Ranganathan , Rakesh Kumar , Aveek Nath Chatterjee
CPC classification number: B81B7/007 , B81B2201/016 , B81B2201/0271 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C1/00253 , B81C2201/013 , B81C2201/019 , B81C2201/053 , B81C2203/0735 , B81C2203/0771 , B81C2203/0792
Abstract: Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.
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209.发明申请公开(公告)号：US20170113920A1
公开(公告)日：2017-04-27
申请号：US15299600
申请日：2016-10-21
Applicant: Robert Bosch GmbH
Inventor： Frank Reichenbach , Jochen Reinmuth , Jens Frey , Julia Amthor
CPC classification number: B81B7/0048 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/00293 , B81C1/00325 , B81C2201/013 , B81C2203/0145
Abstract: A method for manufacturing a micromechanical component including a substrate and a cap connected to the substrate and together with the substrate enclosing a first cavity, a first pressure prevailing and a first gas mixture with a first chemical composition being enclosed in the first cavity. An access opening, connecting the first cavity to surroundings of the micromechanical component, is formed in the substrate or the cap. The first pressure and/or the first chemical composition is adjusted in the first cavity. The access opening is sealed by introducing energy and heat into an absorbing part of the substrate or cap with the aid of a laser. A recess is formed in a surface of the substrate or of the cap facing away from the first cavity in the area of the access opening for accommodating a material area of the substrate or the cap converted into a liquid aggregate state.
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公开(公告)号：US20170107100A1
公开(公告)日：2017-04-20
申请号：US15176365
申请日：2016-06-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shyh-Wei Cheng , Chih-Yu Wang , Hsi-Cheng Hsu , Hsin-Yu Chen , Ji-Hong Chiang , Jui-Chun Weng , Wei-Ding Wu
CPC classification number: B81B7/0041 , B81B3/0081 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/09 , B81C1/00293 , B81C2201/013 , B81C2203/0109 , B81C2203/0118 , B81C2203/037 , B81C2203/038 , B81C2203/0735 , H01L28/20
Abstract: The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.
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