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212.发明公开니켈 산화물 박막 형성방법과 이를 이용한 비정질 실리콘박막의 결정화 방법 및 박막 트랜지스터 제조 방법. 有权镍氧化物薄膜的制备方法和使用其制造非晶硅薄膜的方法和使用该薄膜的薄膜晶体管的制造方法
公开(公告)号：KR1020070081218A
公开(公告)日：2007-08-16
申请号：KR1020060012989
申请日：2006-02-10
IPC: H01L29/786
CPC classification number: H01L21/02672 , H01L27/1277 , H01L29/66757
Abstract: A method for crystallizing an amorphous silicon thin film using a method for forming a nickel oxide thin film is provided to form a uniform thin film while adjusting the average thickness of a nickel oxide thin film to a scope of several to several tens of angstroms by using a nickel amino-alkoxide compound as a nickel supply source and by forming a nickel oxide thin film by an ALD method. A nickel supply source is supplied to the upper surface of an amorphous silicon thin film formed on a glass substrate to form a nickel deposition layer. An unreacted nickel supply source and reaction byproducts are removed from the amorphous silicon thin film. An oxygen supply source is supplied to the nickel deposition layer to form a nickel oxide thin film on the amorphous silicon thin film through an oxide reaction(S120). An unreacted oxygen supply source and reaction byproducts are eliminated from the nickel oxide thin film. Each one of the abovementioned processes can be performed in a cycle of 1~50.
Abstract translation: 提供一种使用氧化镍薄膜形成方法使非晶硅薄膜结晶的方法，以形成均匀的薄膜，同时通过使用将氧化镍薄膜的平均厚度调节至几到几十埃的范围 镍氨基醇盐化合物作为镍供应源，并通过ALD法形成氧化镍薄膜。 将镍供给源供给到形成在玻璃基板上的非晶硅薄膜的上表面，形成镍沉积层。 从非晶硅薄膜中除去未反应的镍源和反应副产物。 向镍沉积层供给氧供给源，通过氧化物反应在非晶硅薄膜上形成氧化镍薄膜（S120）。 从氧化镍薄膜中除去未反应的氧供应源和反应副产物。 上述处理中的每一个可以以1〜50的周期进行。
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213.发明授权
公开(公告)号：KR100704914B1
公开(公告)日：2007-04-06
申请号：KR1020050077746
申请日：2005-08-24
Applicant: 한국화학연구원
IPC: C23C16/40
Abstract: 본 발명은 하기 화학식 1의 니켈 아미노알콕사이드 선구 물질을 니켈의 원료 화합물로 하여 금속 유기물 화학 증착법(metal organic chemical vapor deposition, MOCVD)으로 니켈 산화물 박막을 제조하는 방법에 관한 것으로, 본 발명의 방법에 따르면 기존의 금속 유기물 화학 증착법에 비해 더 온화한 공정 조건에서 품질이 좋은 니켈 산화물 박막을 얻을 수 있다.
[화학식 1]
상기 식에서, m은 1 내지 3 범위의 정수고, R
1 , R
2 , R
3 및 R
4 는 독립적으로 C
1 -C
4 선형 또는 분지형 알킬기다.
니켈 산화물 박막, MOCVD, 니켈 아미노알콕사이드-
公开(公告)号：KR100695466B1
公开(公告)日：2007-03-16
申请号：KR1020060031633
申请日：2006-04-06
Applicant: 한국화학연구원
CPC classification number: C07F19/00 , C23C16/40 , C23C16/45525
Abstract: A novel gadolinium oxide precursor material is provided to be thermally stable and have increased volatility, thereby forming a good quality gadolinium oxide film. The gadolinium oxide precursor material is represented by the formula(1), Gd[N(Si(CH3)3)2]x[O-A-N(R^3)-B-NR^1R^2]_3-x, and is prepared by reacting a compound represented by the formula(5), Gd[N(Si(CH3)3)2]3, obtained by reacting a gadolinium compound represented by the formula(3), GdCl3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2], with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl, and x is an 0 or 1.
Abstract translation: 提供了一种新型的氧化钆前体材料以使其热稳定并且具有增加的挥发性，从而形成了优质的氧化钆膜。 氧化钆前体材料由式（1），Gd [N（Si（CH 3）3）2] x [OAN（R 3 3）-B-NR 1 1R 2] 3-x表示，并且被制备 通过使式（5）表示的化合物与通式（3）所示的钆化合物GdCl 3反应得到的Gd [N（Si（CH 3）3）2] 3与由 式（4），M [N（Si（CH 3）3）2]与式（6）表示的醇化合物，HO-AN（R ^ 3）-B-NR 1 1R 2，其中M 是Li，Na或K，A是C2-5亚烷基，B是C1-4亚烷基，A和B能够被至少一个直链或支链C 1-5烷基进一步取代，每个R 1，R ^ 2和R 4独立地为H或直链或支链C 1-5烷基，x为0或1。
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215.发明公开
公开(公告)号：KR1020070023299A
公开(公告)日：2007-02-28
申请号：KR1020050077746
申请日：2005-08-24
Applicant: 한국화학연구원
IPC: C23C16/40
Abstract: 본 발명은 하기 화학식 1의 니켈 아미노알콕사이드 선구 물질을 니켈의 원료 화합물로 하여 금속 유기물 화학 증착법(metal organic chemical vapor deposition, MOCVD)으로 니켈 산화물 박막을 제조하는 방법에 관한 것으로, 본 발명의 방법에 따르면 기존의 금속 유기물 화학 증착법에 비해 더 온화한 공정 조건에서 품질이 좋은 니켈 산화물 박막을 얻을 수 있다.
[화학식 1]
상기 식에서, m은 1 내지 3 범위의 정수고, R
1 , R
2 , R
3 및 R
4 는 독립적으로 C
1 -C
4 선형 또는 분지형 알킬기다.
니켈 산화물 박막, MOCVD, 니켈 아미노알콕사이드Abstract translation: 本发明涉及一种方法，用于制造氧化镍薄膜，以金属有机化学气相沉积（金属有机化学气相沉积，MOCVD）于式（1）作为原料，镍的化合物的镍 - 氨基 - 烷氧基前体，根据本发明的方法 与传统的金属有机化学气相沉积法相比，在较温和的工艺条件下可以获得高质量的氧化镍薄膜。
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Patent Agency Ranking
公开(公告)号：KR100675983B1
公开(公告)日：2007-01-30
申请号：KR1020060021093
申请日：2006-03-06
Applicant: 한국화학연구원
Abstract: A novel cobalt compound precursor material is provided to be thermally stable and show increased volatility so as to form good quality cobalt, cobalt oxide thin film and nano particles, and a compound including cobalt such as LiCoO2, LiNi1-yCoyO2, FeCo, PtCo, CoZrO2, CoCrO4, and CoCr2O4. The cobalt amino-alkoxide complex is represented by the formula(1), Co[O-A-NF^1R^2]2, and is prepared by reacting a cobalt compound represented by the formula(3), Co(NH3)5X]X2, with an amino alkoxide alkaline metal salt compound represented by the formula(4), MO-A-NR^1R^2. In the formulae, X is Cl, Br or I, M is Li, Na, or K, A is linear or branched C2-10 alkylene substituted or unsubstituted by halogen, and each R^1 and R^2 is independently linear or branched C2-7 alkyl substituted or unsubstituted by halogen.
Abstract translation: 新型钴化合物前体材料被提供为热稳定的并且显示出增加的挥发性以便形成优质的钴，氧化钴薄膜和纳米颗粒，以及包含钴的化合物例如LiCoO 2，LiNi 1-yCoyO 2，FeCo，PtCo，CoZrO 2 ，CoCrO4和CoCr2O4。 所述钴氨基醇盐配合物由式（1）表示，并且通过使由式（3）表示的钴化合物，Co（NH 3）5 X] x 2 与式（4）代表的氨基醇盐碱金属盐化合物MO-A-NR 2 R 1 R 2。 在通式中，X是Cl，Br或I，M是Li，Na或K，A是被卤素取代或未取代的直链或支链C 2-10亚烷基，并且每个R 1和R 2独立地为直链或支链 被卤素取代或未被取代的C 2-7烷基。
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公开(公告)号：KR1020060116421A
公开(公告)日：2006-11-15
申请号：KR1020050038683
申请日：2005-05-10
Applicant: 한국화학연구원
Abstract: A process for preparing a nano-sized silver particle colloid dispersed into organic solvents is provided to prepare silver nanoparticles with several nanometer particle size and uniform particle distribution by overcoming an existing problem in restrictively synthesizing silver nanoparticles in an aqueous solution, and prepare a stable silver colloid by dispersing the silver nanoparticles into various organic solvents. A process for preparing a nano-silver colloid monodispersed into organic solvents comprises the steps of: (a) mixing a silver salt or an aqueous silver salt solution with a covering ligand dissolved into an organic solvent; (b) slowly adding a reductant to the mixed solution; (c) precipitating nanosilver particles in a polar organic solvent, and separating the nanosilver particles; (d) dispersing prepared nanosilver particles into a non-polar organic solvent, and adding a dispersant to the solution. The covering ligand is formed of a nonionic, cationic, anionic or amphoteric hydrocarbon-based compound having solubility in the organic solvent, or a mixture of two or more thereof. The silver salt is selected from silver acetate, silver nitrate, silver carbonate, and silver perchlorate. The reductant is selected from sodium borohydride, hydrazine, lithium borohydride, lithium aluminumhydride, or citrate.
Abstract translation: 提供分散在有机溶剂中的纳米尺寸银粒子胶体的制备方法，通过克服在水溶液中限制性合成银纳米粒子的现有问题制备几纳米粒度和均匀粒子分布的银纳米颗粒，并制备稳定的银 通过将银纳米颗粒分散到各种有机溶剂中来制备胶体。 制备单分散在有机溶剂中的纳米银胶体的方法包括以下步骤：（a）将银盐或银盐溶液与溶解在有机溶剂中的覆盖配体混合; （b）向混合溶液中缓慢加入还原剂; （c）在极性有机溶剂中沉淀纳米银颗粒，并分离纳米银颗粒; （d）将制备的纳米银颗粒分散在非极性有机溶剂中，并向溶液中加入分散剂。 覆盖配体由在有机溶剂中具有溶解性的非离子，阳离子，阴离子或两性烃基化合物或其两种或更多种的混合物形成。 银盐选自乙酸银，硝酸银，碳酸银和高氯酸银。 还原剂选自硼氢化钠，肼，硼氢化锂，氢化铝锂或柠檬酸盐。
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公开(公告)号：KR100644163B1
公开(公告)日：2006-11-10
申请号：KR1020050050826
申请日：2005-06-14
Applicant: 한국화학연구원
IPC: H01L21/20
Abstract: A method for manufacturing a zinc oxide thin film is provided to improve the qualities without an additional oxygen source by performing a metal organic chemical deposition using amino alkyl acid alkyl zinc as a thin film precursor material. Amino alkyl acid alkyl zinc is vaporized. A zinc oxide thin film is formed on a base member by using the vaporized amino alkyl acid alkyl zinc. The base member is made of one selected from a group consisting of a silicon substrate, a sapphire substrate and a zinc oxide substrate. The base member is performed with a surface oxidation. When the zinc oxide thin film is formed on the base member, the temperature of the base member is in a predetermined range of 250 to 400 ‹C.
Abstract translation: 通过使用氨基烷基酸烷基锌作为薄膜前体材料进行金属有机化学沉积，提供了一种用于制造氧化锌薄膜的方法，以在没有附加氧源的情况下提高质量。 氨基烷基酸烷基锌被汽化。 通过使用汽化的氨基烷基酸烷基锌在基底部件上形成氧化锌薄膜。 基材由选自硅基板，蓝宝石基板和氧化锌基板中的一种材料构成。 基材采用表面氧化进行。 当在基件上形成氧化锌薄膜时，基件的温度在250-400℃的预定范围内。
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公开(公告)号：KR1020060042614A
公开(公告)日：2006-05-15
申请号：KR1020040091344
申请日：2004-11-10
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , C23C16/40 , H01L21/205
Abstract: 본 발명은 하기 화학식 1의 란탄족 화합물 및 그 제조방법에 관한 것으로, 본 발명에 따라 합성하는 란탄족 화합물은 열적으로 안정하고 휘발성이 개선되어 란탄계 산화물 박막 제조에 유리하게 사용할 수 있다.
상기 식에서,
M은 세륨, 프라세오디뮴, 란탄 또는 어븀이고,
R 및 R'은 각각 독립적으로 C
1 -C
4 의 선형 또는 분지형 알킬기이며,
Y는 OR" 또는 NR
2 " (여기서, R"은 C
1 -C
4 선형 또는 분지형 알킬기임)이다.-
公开(公告)号：KR1020060000060A
公开(公告)日：2006-01-06
申请号：KR1020040048917
申请日：2004-06-28
Applicant: 한국화학연구원
CPC classification number: C07F9/00 , C23C16/34 , C23C16/45525 , H01L21/20
Abstract: 본 발명은 하기 화학식 1로 표시한 탄탈럼 질화물 선구 물질과 이의 제조 방법에 관한 것으로, 본 발명에 따른 탄탈럼 질화물 선구 물질은 열적으로 안정하고 휘발성이 높아 양질의 탄탈럼 질화물 박막을 제조하는 데 유리하게 이용할 수 있다.
RN=Ta(NR'
2 )
n (OCR"
2 CH
2 NR
*
2 )
3-n
상기 식에서, R은 이소프로필기거나 t-부틸기고, R'은 메틸, 에틸, 이소프로필, t-부틸 또는 알킬실릴 기고, R"은 C
1 -C
4 선형 또는 분지형 알킬기고, R
＊ 는 C
1 -C
4 선형 또는 분지형 알킬 또는 알킬실릴 기고, n은 0, 1 또는 2다.
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