Abstract:
A method of making released structures by using at least two directional etching steps. Cantilevers, bridges and many other structures can be made with the present invention. In a preferred embodiment, two directional etching steps are performed at opposing angles nonnormal to the substrate surface such that the substrate is undercut and a structure is released. Alternatively, more than two directional etching steps may be performed at various angles. For example, the substrate may be rotated continuously during the directional etching process. A cantilever formed by the method of the present invention necessarily has a substantially triangular cross section. Directional etching processes that can be used include focused ion beam etching and ECR plasma etching. Some directional etching processes may require the use of a patterned etch resist layer. Other etching processes such as focused ion beam etching may use scanning techniques to select which regions are etched. A backside etch can be performed to remove remaining substrate material under the released micromachined structure. The method is particularly well suited for making released cantilevers.
Abstract:
A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2
Abstract:
A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.
Abstract:
A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.
Abstract:
Methods and apparatuses for measuring static and dynamic pressures in harsh environments are disclosed. A pressure sensor according to one embodiment of the present invention may include a diaphragm constructed from materials designed to operate in harsh environments. A waveguide may be operably connected to the diaphragm, and an electromagnetic wave producing and receiving (e.g., sensing) device may be attached to the waveguide, opposite the diaphragm. A handle may be connected between the diaphragm and the waveguide to provide both structural support and electrical functionality for the sensor. A gap may be included between the handle and the diaphragm, allowing the diaphragm to move freely. An antenna and a ground plane may be formed on the diaphragm or the handle. Electromagnetic waves may be reflected off the antenna and detected to directly measure static and dynamic pressures applied to the diaphragm.
Abstract:
For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.
Abstract:
Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.
Abstract:
A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.
Abstract:
The invention relates to a component (4) of a biosensor, comprising at least one first device (6) for receiving a sample liquid, wherein the device (6) is connected via a distributor channel (7) to further receiving devices (8 to 11), into each of which a feed channel (71, 72, 73, 74) branching off from the distributor channel (7) opens, and the feed channels (71, 72, 73, 74) are arranged in succession in flow direction (S) of the sample liquid passed on through the distributor channel (7). In accordance with the invention, it is envisaged that, in the distributor channel (7), in each case between two immediately successive feed channels (71, 72; 72, 73; 73, 74) in flow direction (S), at least one region (K) for at least temporary slowing or stoppage of the capillary flow of the sample liquid has been inserted. It is thus possible to control the capillary flow of the sample liquid such that always only one receiving device (8, 9, 10, 11) is filled with the volume flow of sample liquid available before the next is filled, and effectively simultaneous filling of the receiving devices (8, 9, 10, 11) is prevented. This leads to rapid and complete filling of the respective receiving device (8, 9, 10, 11). Additionally presented is a process with which the regions (K) can be inserted into the distributor channel (7) in a simple manner.
Abstract:
The present invention relates to methods for joining materials as well as articles manufactured using such processes. The invention pertains to a process for joining a first substrate to a second substrate. The process includes irradiating a portion of a first substrate with a laser beam having a first wavelength and intensity sufficient to increase the absorbance of the first substrate to light having a second, different wavelength. The laser beam may carbonize at least a portion of the irradiated portion of the first substrate imparting a higher absorbance to light than non-irradiated portions of the first substrate. A second substrate is then placed in contact with the irradiated portion of the first substrate. The first substrate is then irradiated with a second laser having a second wavelength, different to the first wavelength; with a sufficient intensity to heat and, preferably melt, the irradiated portion of the first substrate.