Transmission circuit board structure, transmission circuit board, and connector having the same
    221.
    发明公开
    Transmission circuit board structure, transmission circuit board, and connector having the same 审中-公开
    Struktur einerÜbertragungsleiterplatte,Übertragungsleiterplatteund Verbinder

    公开(公告)号:EP1631131A2

    公开(公告)日:2006-03-01

    申请号:EP05018487.8

    申请日:2005-08-25

    Abstract: A transmission circuit board structure comprises at least one signal layer formed by a plurality of signal lines (20) arranged side by side, at least one ground layer formed of a ground plate (30) and provided in parallel to the signal layer, and a support member (10) made of a dielectric material, formed integrally with the signal lines to support the signal lines. The support member (10) has at least one connection member (12), which abuts against the ground plate (30) at a position where the insulation layer made by an air space is produced between the signal lines (20) and the ground plate (30).

    Abstract translation: 传输电路板结构包括由并排布置的多个信号线(20)形成的至少一个信号层,由接地板(30)形成并且与信号层平行设置的至少一个接地层,以及 由介电材料制成的支撑构件(10),与信号线整体形成以支撑信号线。 支撑构件(10)具有至少一个连接构件(12),其在由信号线(20)和接地板(20)之间产生由空气空间制成的绝缘层的位置处抵靠接地板(30) (30)。

    A SLANTED CONNECTOR
    225.
    发明公开
    A SLANTED CONNECTOR 有权
    直角插头

    公开(公告)号:EP1247343A1

    公开(公告)日:2002-10-09

    申请号:EP00983625.5

    申请日:2000-12-01

    Inventor: GREK, Joachim

    Abstract: A slanted connector and a method for mounting the same, having first connector means (20) extended in a first direction and second connector means (29a-c) extended in a slanted direction in relation to the first connector means (20).According to the invention the slanted connector comprises a first part (2) comprising the first connector means (20) and a second part (21a-e) comprising the second connector means (29a-c). The second part (21a-e) is connectable to the first connector means (20) and has a bent form in order to engage the first connector means (20) in a first direction and provide the second connector means (29a-c) protruding in at least one second direction slanted to the first direction, the second part (21a-e) having a circuit pattern to connect the first connector means (20) to the second connector means (29a-c).

    Electrical connection box for a vehicle
    227.
    发明公开
    Electrical connection box for a vehicle 有权
    车辆的电气连接盒

    公开(公告)号:EP1187259A2

    公开(公告)日:2002-03-13

    申请号:EP01307481.0

    申请日:2001-09-03

    Abstract: An electrical connection box for use in a vehicle has bus bars (10, 11) in a casing with upstanding connection tabs (10a, 11a) which are alongside and spaced from each other. Insulation resin embeds the tabs while leaving exposed projecting portions. A connector (20) attached to the casing has a housing (21) containing terminals (7, 8) respectively engaged with the projecting portions of the tabs. The resin material provides a recess (15) located between the tabs (10a, 11a) and the housing of said connector (20) has a partition wall (22) of insulating material which lies between the terminals (7, 8) and extends into the recess (15), to prevent leak current between the terminals.

    Abstract translation: 一种用于车辆中的电连接盒,具有位于壳体中的汇流条(10,11),该汇流条具有直立的连接片(10a,11a),所述连接片沿着彼此并且彼此间隔开。 绝缘树脂嵌入接片,同时留下暴露的突出部分。 连接到壳体的连接器(20)具有包含分别与突片的突出部分接合的端子(7,8)的壳体(21)。 树脂材料提供位于凸片(10a,11a)之间的凹槽(15),并且所述连接器(20)的壳体具有位于端子(7,8)之间并延伸到绝缘材料的隔离材料的隔壁(22) (15),以防止端子之间的泄漏电流。

    METHOD FOR FABRICATING A SELF-LIMITING SILICON BASED INTERCONNECT FOR TESTING BARE SEMICONDUCTOR DICE
    229.
    发明公开
    METHOD FOR FABRICATING A SELF-LIMITING SILICON BASED INTERCONNECT FOR TESTING BARE SEMICONDUCTOR DICE 失效
    制作一个探头硅基用于测试裸半导体芯片

    公开(公告)号:EP0792518A1

    公开(公告)日:1997-09-03

    申请号:EP95940644.0

    申请日:1995-11-06

    Abstract: A method for forming a self-limiting, silicon based interconnect for making temporary electrical contact with bond pads on a semiconductor die is provided. The interconnect includes a silicon substrate having an array of contact members adapted to contact the bond pads on the die for test purposes (e.g., burn-in testing). The interconnect is fabricated by: forming the contact members on the substrate; forming a conductive layer on the tip of the contact members; and then forming conductive traces to the conductive layer. The conductive layer is formed by depositing a silicon containing layer (e.g., polysilicon, amorphous silicon) and a metal layer (e.g., titanium, tungsten, platinum) on the substrate and contact members. These layers are reacted to form a silicide. The unreacted metal and silicon containing layer are then etched selective to the conductive layer which remains on the tip of the contact members. Conductive traces are then formed in contact with the conductive layer using a suitable metallization process. Bond wires are attached to the conductive traces and may be attached to external test circuitry. Alternately, another conductive path such as external contacts (e.g., slide contacts) may provide a conductive path between the conductive traces and external circuitry. The conductive layer, conductive traces and bond wires provide a low resistivity conductive path from the tips of the contact members to external test circuitry.

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