公开(公告)号：US20170174507A1

公开(公告)日：2017-06-22

申请号：US14973319

申请日：2015-12-17

Applicant: Globalfoundries Singapore Pte. Ltd.

Inventor： Siddharth Chakravarty ,  Rakesh Kumar ,  Pradeep Yelehanka

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00293 ,  B81B7/0074 ,  B81B2203/0315 ,  B81C2201/0105 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0136

Abstract: Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.

公开(公告)号：US20170073224A1

公开(公告)日：2017-03-16

申请号：US15312146

申请日：2015-05-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Yonggang HU ,  Guoping ZHOU

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00 ,  B81C2201/0133 ,  B81C2201/0142

Abstract: An MEMS-based method for manufacturing a sensor comprises the steps of: forming a shallow channel (120) and a support beam (140) on a front surface of a substrate (100); forming a first epitaxial layer (200) on the front surface of the substrate (100) to seal the shallow channel (120); forming a suspended mesh structure (160) below the first epitaxial layer (200); and forming a deep channel (180) at a position on a back surface of the substrate (100) corresponding to the shallow channel (120), so that the shallow channel (120) is in communication with the deep channel (180). In the Method of manufacturing a MEMS-based sensor, when a shallow channel is formed on a front surface, a support beam of a mass block is formed, so the etching of a channel is easier to control, the process is snore precise. and the uniformity and the homogeneity of the formed support beam are better.

Abstract translation: 用于制造传感器的基于MEMS的方法包括以下步骤：在衬底（100）的前表面上形成浅沟道（120）和支撑梁（140）; 在所述衬底（100）的前表面上形成第一外延层（200）以密封所述浅沟道（120）; 在所述第一外延层（200）下方形成悬浮网状结构（160）; 以及在与所述浅通道（120）相对应的所述基板（100）的背表面上的位置处形成深通道（180），使得所述浅通道（120）与所述深通道（180）连通。 在制造基于MEMS的传感器的方法中，当在前表面上形成浅沟道时，形成质量块的支撑梁，因此通道的蚀刻更易于控制，工艺打鼾精确。 形成的支撑梁的均匀性和均匀性更好。

公开(公告)号：US20160264408A1

公开(公告)日：2016-09-15

申请号：US15031957

申请日：2014-10-15

Applicant: Swansea University

Inventor： Yufei LUI ,  Owen GUY

IPC: B81C1/00 ,  A61M37/00

CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C16/402

Abstract: A method of forming microneedles where through a series of coating and etching processes microneedles are formed from a surface as an array. The microneedles have a bevelled end and bore which are formed as part of the process with no need to use a post manufacturing process to finish the microneedle.

Abstract translation: 一种形成微针的方法，其中通过一系列涂层和蚀刻处理微针从表面形成为阵列。 微针具有倾斜的端部和孔，其形成为该过程的一部分，而不需要使用后制造工艺来完成微针。

公开(公告)号：US20160035512A1

公开(公告)日：2016-02-04

申请号：US14883836

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H11/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20150376798A1

公开(公告)日：2015-12-31

申请号：US14760305

申请日：2014-03-14

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： Anne Eugenie Sakdinawat ,  Chieh Chang

IPC: C23F1/02 ,  G21K1/06 ,  G02B5/18

CPC classification number: C23F1/02 ,  B81B2201/047 ,  B81C1/00619 ,  B81C2201/0133 ,  G02B5/1838 ,  G02B5/1857 ,  G03F7/0005 ,  G21K1/06 ,  G21K2201/067

Abstract: A method of ultra-high aspect ratio high resolution vertical directionality controlled metal-assisted chemical etching, V-MACE, is provided that includes forming a pattern on a substrate surface, using a lithographic or non-lithographic process, forming hole concentration balancing structures on the substrate, using a lithographic process or non-lithographic process, where the concentration balancing structures are proximal to the pattern, forming mechanical anchors internal or external to the patterned structures, forming pathways for etchant and byproducts to diffuse, and etching vertical features from the substrate surface into the substrate, using metal-assisted chemical etching, MACE, where the vertical features are confined to a vertical direction by the concentration balancing structures.

Abstract translation: 提供了一种超高纵横比高分辨率垂直方向性控制的金属辅助化学蚀刻V-MACE的方法，其包括使用光刻或非平版印刷工艺在基板表面上形成图案，在 基板，使用光刻工艺或非平版印刷工艺，其中浓度平衡结构靠近图案，在图案化结构的内部或外部形成机械锚，形成用于蚀刻剂和副产物扩散的路径，并从垂直特征 衬底表面进入衬底，使用金属辅助化学蚀刻MACE，其中垂直特征通过浓度平衡结构限制在垂直方向。

公开(公告)号：US20150200069A1

公开(公告)日：2015-07-16

申请号：US14670671

申请日：2015-03-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H59/00 ,  H01H49/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Abstract translation: 提供MEMS开关和制造MEMS开关的方法。 所述MEMS开关具有至少两个悬臂电极，所述至少两个悬臂电极具有重叠的端部，并且在被至少一个固定电极施加电压时被构造和可操作以彼此接触。

公开(公告)号：US20150031161A1

公开(公告)日：2015-01-29

申请号：US14514356

申请日：2014-10-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jong Woon Kim ,  Won Kyu Jeung

IPC: B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/0062 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2203/053 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/01 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/014 ,  C09K13/00 ,  C09K13/08 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/0922 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0871

Abstract: Disclosed herein an inertial sensor and a method of manufacturing the same. An inertial sensor 100 according to a preferred embodiment of the present invention is configured to include a plate-shaped membrane 110, a mass body 120 that includes an adhesive part 123 disposed under a central portion 113 of the membrane 110 and provided at the central portion thereof and a patterning part 125 provided at an outer side of the adhesive part 123 and patterned to vertically penetrate therethrough, and a first adhesive layer 130 that is formed between the membrane 110 and the adhesive part 123 and is provided at an inner side of the patterning part 125. An area of the first adhesive layer 130 is narrow by isotropic etching using the patterning part 125 as a mask, thereby making it possible to improve sensitivity of the inertial sensor 100.

Abstract translation: 本文公开了一种惯性传感器及其制造方法。 根据本发明的优选实施例的惯性传感器100被配置为包括板状膜110，质量体120，其包括设置在膜110的中心部分113下方并设置在中心部分处的粘合部123 以及设置在粘合部123的外侧并被图案化以垂直贯穿其中的图案形成部分125，以及形成在膜110和粘合部123之间的第一粘合层130，并且设置在第一粘合层130的内侧 图形部分125.通过使用图案形成部分125作为掩模的各向同性蚀刻，第一粘合剂层130的区域变窄，从而可以提高惯性传感器100的灵敏度。

公开(公告)号：US08841736B2

公开(公告)日：2014-09-23

申请号：US13960647

申请日：2013-08-06

Applicant: NXP B.V.

Inventor： Robert James Pascoe Lander

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81C1/00134 ,  B81C1/00928 ,  B81C2201/0133 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: An integrated circuit comprising a MEMS (microelectromechanical system) element in a plane of the integrated circuit, the MEMS element being suspended in a cavity over a substrate, said cavity including a first cavity region in said plane spatially separating an edge of the MEMS element from a wall section, said edge being arranged to be displaced relative to the wall section; and a second cavity region in said plane forming part of a fluid path further including the first cavity region, said fluid path defining a first volume; and a third cavity region in said plane defining a second volume in fluid connection with the second cavity region, wherein the maximum width of the second cavity region is larger than the maximum width of the third cavity region, the second and third cavity regions having maximum widths that are larger than the maximum width of the first cavity region.

Abstract translation: 一种集成电路，包括在所述集成电路的平面中的MEMS（微机电系统）元件，所述MEMS元件悬挂在衬底上的空腔中，所述空腔包括在所述平面中的空间上的第一空腔区域，以将所述MEMS元件的边缘与 壁部分，所述边缘被布置成相对于壁部分移位; 以及在所述平面中形成另外包括第一腔区域的流体路径的一部分的第二腔区，所述流体路径限定第一体积; 以及所述平面中的第三空腔区域，其限定与第二腔区域流体连接的第二容积，其中第二腔区域的最大宽度大于第三空腔区域的最大宽度，第二和第三空腔区域具有最大值 宽度大于第一空腔区域的最大宽度。

公开(公告)号：US08703517B2

公开(公告)日：2014-04-22

申请号：US13279409

申请日：2011-10-24

Applicant: Atsushi Taya ,  Katsuhiko Kanamori ,  Masashi Totokawa

Inventor： Atsushi Taya ,  Katsuhiko Kanamori ,  Masashi Totokawa

IPC: H01L21/02

CPC classification number: B81C1/00476 ,  B23K26/361 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B81B2201/0264 ,  B81C2201/0133 ,  C30B29/06 ,  C30B33/04 ,  C30B33/08 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/268 ,  H01L21/30608

Abstract: In a manufacturing method of a semiconductor device, a substrate including single crystalline silicon is prepared, a reformed layer that continuously extends is formed in the substrate, and the reformed layer is removed by etching. The forming the reformed layer includes polycrystallizing a portion of the single crystalline silicon by irradiating the substrate with a pulsed laser beam while moving a focal point of the laser beam in the substrate.

Abstract translation: 在半导体器件的制造方法中，制备包括单晶硅的衬底，在衬底中形成连续延伸的重整层，并且通过蚀刻去除重整层。 形成重整层包括通过在激光束的基底中移动焦点的同时用脉冲激光束照射单晶硅的一部分来多晶化。

公开(公告)号：US08691611B2

公开(公告)日：2014-04-08

申请号：US13290905

申请日：2011-11-07

Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

IPC: H01L21/3065

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。