公开(公告)号：WO2003012819A1

公开(公告)日：2003-02-13

申请号：PCT/US2002/014630

申请日：2002-05-10

Applicant: THE UNITED STATES OF AMERICA, as represented by the SECRETARY OF THE NAVY NAVAL RESEARCH LABORATORY

Inventor： PEHRSSON, Pehr ,  BUTLER, James

IPC: H01J9/00

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter is provided. The method is comprised of implanting ions into a diamond lattice (10) to form cones (11a) or other continuous regions of damaged diamond (11). These regions (11) are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips (13) at or near the point of enntry of the ion into the diamond. The tips (13) may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material (16) may also be placed in proximity to the tips (13) to generate an electric field sufficient to extract electrons from the conducting tips (13) into either the region above the surface, or into the wide band-gap semiconductor layer (18) in contact with the tips (13). The surface of the wideband gap semiconductor (18) or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种制造电子发射器的方法。 该方法包括将离子注入到金刚石晶格（10）中以形成锥体（11a）或损坏的金刚石（11）的其它连续区域。 这些区域（11）比周围的金刚石晶格更具导电性，并且在离子进入金刚石的点处或附近具有局部尖锐的尖端（13）。 然后，可以另外用一层宽带隙半导体涂覆尖端（13）。 还可以将导电材料（16）放置在接近尖端（13）处，以产生足以将电子从导电尖端（13）提取到表面上方的区域中的电场，或者进入宽带隙 半导体层（18）与尖端（13）接触。 宽带隙半导体（18）或金刚石的表面可以被化学修饰以增强来自表面的电子的发射。

公开(公告)号：WO99000816A1

公开(公告)日：1999-01-07

申请号：PCT/IB1998/000980

申请日：1998-06-25

IPC: H01J1/30 ,  H01J1/308

CPC classification number: H01J1/308 ,  H01J2201/30457

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K = 1334 +/- 4 cm with a half-width value of 12 +/- 6 cm , at K = 1140 +/- 20 cm and at K = 1470 +/- 20 cm , the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm . The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross section.

Abstract translation: 在具有冷阴极的电子发射部件中，包括基底和具有含金刚石的材料的覆盖层，所述金刚石材料由纳米晶体金刚石构成，所述纳米晶体金刚石具有三条拉曼光谱，即K = 1334 +/- 4cm -1 >，半径宽度为12 +/- 6cm -1，K = 1140 +/- 20cm -1，K = 1470 +/- 20cm -1，冷阴极 表现出低提取场强，在低于10 -4 mbar的压力下的稳定发射，陡峭的电流 - 电压特性和超过1微安/ mm 2的稳定的发射电流。 元件的电子发射表现出长时间的稳定性，电子束横截面的恒定强度。

公开(公告)号：WO9822967A3

公开(公告)日：1998-08-27

申请号：PCT/US9719767

申请日：1997-10-31

Applicant: SI DIAMOND TECHN INC

Inventor： BOJKOV CHRISTO P ,  FINK RICHARD LEE ,  KUMAR NALIN ,  TIKHONSKI ALEXEI ,  YANIV ZVI

IPC: G09G3/22 ,  G09G3/34 ,  H01J1/304 ,  H01J9/02 ,  H01J29/46 ,  H01J

CPC classification number: H01J29/467 ,  G09G3/22 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A cathode assembly includes a substrate (100), a plurality of electrically conducting strips (101), deposited on the substrate, and a continuous layer of diamond material (200) deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips.

公开(公告)号：WO9606442A3

公开(公告)日：1996-06-06

申请号：PCT/US9510117

申请日：1995-08-09

Applicant: FED CORP

Inventor： JONES GARY W

IPC: G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J

CPC classification number: G09G3/025 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0422 ,  H04N13/0427 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0456 ,  H04N13/0459 ,  H04N13/0497

Abstract: An imaging apparatus (100) for providing an image from a display (106) to an observer (101), comprising: a display (106) generating an optical output, an imaging surface member (109) constructed and arranged for viewing by said observer, and a scanning mirror/lens assembly (102) optically interposed between the display and the imaging surface member, and constructed and arranged to motively repetitively scan the display, generate a scanned image, and transmit the scanned image to the imaging surface member, for viewing of the scanned image. Various field emitter display designs and subassemblies are described, which may be usefully employed in such imaging apparatus.

公开(公告)号：WO1996008025A2

公开(公告)日：1996-03-14

申请号：PCT/US1995011291

申请日：1995-09-07

Applicant: FED CORPORATION

Inventor： FED CORPORATION ,  JONES, Gary, W. ,  KIM, Jong ,  ZIMMERMAN, Steven, M.

IPC: H01J01/02

CPC classification number: G02B27/017 ,  G01R33/10 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G02B2027/0132 ,  G02B2027/0136 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N5/70 ,  H04N5/7408 ,  H04N5/7491 ,  H04N13/194 ,  H04N13/286 ,  H04N13/324 ,  H04N13/341 ,  H04N13/344 ,  H04N13/361 ,  H04N13/363 ,  H04N13/365 ,  H04N13/398

Abstract: A field emitter array magnetic sensor (FEAMS) device, comprising: an anode; a base plate member having on a first side thereof a plurality of gated field emitter elements thereon, in spaced proximal relationship to the anode. The plurality of gated field emitter elements and the anode structure are arranged so that each of the gated field emitter elements is in electron emitting relationship to varying electron impingement sites depending on intensity of the magnetic field on the gated field emitter element. The device includes structure for sensing the locations of the anode structure electron impingement sites receiving electrons from the plurality of gated field emitter elements, and determining the strength and orientation of the magnetic field. Also disclosed are various anode configurations which may be usefully employed in the FEAMS device of the invention.

公开(公告)号：WO1996003762A1

公开(公告)日：1996-02-08

申请号：PCT/RU1995000154

申请日：1995-07-18

Applicant: GIVARGIZOV, Evgeny Invievich ,  ZHIRNOV, Viktor Vladimirovich ,  STEPANOVA, Alla Nikolaevna ,  OBOLENSKAYA, Lidia Nikolaevna

IPC: H01J01/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as a ballast resistor connected in series. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of (h) to the diameter (D) at the emitter base is not less than 1. The angle alpha at the emitter tip does not exceed 30 DEG . The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

Abstract translation: 矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 （h）与发射极基底的直径（D）之比不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

公开(公告)号：WO1995022169A1

公开(公告)日：1995-08-17

申请号：PCT/US1995001920

申请日：1995-02-14

Applicant: E.I. DU PONT DE NEMOURS AND COMPANY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： E.I. DU PONT DE NEMOURS AND COMPANY ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  BLANCHET-FINCHER, Graciela, Beatriz ,  COATES, Don, Mayo ,  DEVLIN, David, James ,  EATON, David, Fielder ,  SILZARS, Aris, K. ,  VALONE, Steven, Michael

IPC: H01J01/30

CPC classification number: H01J1/304 ,  H01J2201/30457

Abstract: A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

Abstract translation: 一种场发射电子发射器，包括由至少一种金刚石，类金刚石碳或玻璃碳复合纤维形成的电极，所述复合纤维在所述非金刚石芯上具有金刚石，类金刚石碳或玻璃碳涂层， 金刚石芯和采用这种场发射电子发射体的电子器件。

公开(公告)号：WO1994020975A1

公开(公告)日：1994-09-15

申请号：PCT/US1994002669

申请日：1994-03-11

Applicant: FED CORPORATION

Inventor： FED CORPORATION ,  JONES, Gary, W.

IPC: H01J19/24

CPC classification number: H01J31/127 ,  G02B27/2235 ,  G09G3/001 ,  H01J3/022 ,  H01J9/025 ,  H01J29/028 ,  H01J29/82 ,  H01J29/94 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H04N5/70 ,  H04N5/7491

Abstract: A vertical field emitter structure (116) and field emission device such as a flat panel display (123) utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures (321), comprising an emitter or gated emitter (328) with conductive columns connecting the emitter to an underlying resistor or conductor structure (325) formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-on voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.

Abstract translation: 垂直场致发射结构（116）和利用这种结构的场致发射器件如平板显示器（123）。 描述了自对准栅极和发射极制造，以及虚拟列场发射器结构（321），其包括发射极或门控发射极（328），其中导电柱将发射极连接到由化学或电子发射器形成的下伏电阻或导体结构（325） 下层的部分的其他修改。 本发明的显示器利用具有低导通电压和高加速电压的场致发射结构，从而可以实现高亮度，小像素尺寸，低制造成本，均匀亮度和高能量效率。

公开(公告)号：WO1992014260A1

公开(公告)日：1992-08-20

申请号：PCT/US1992001148

申请日：1992-02-10

Applicant: MICROELECTRONICS AND COMPUTER TECHNOLOGY ... ,  HUGHES AIRCRAFT COMPANY ,  KUMAR, Nalin ,  GORUGANTHU, Rama, R. ,  GHAZI, Mohammed, K.

Inventor： MICROELECTRONICS AND COMPUTER TECHNOLOGY ... ,  HUGHES AIRCRAFT COMPANY

IPC: H01L21/288

CPC classification number: H01L24/13 ,  H01J2201/30457 ,  H01L24/11 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/11312 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H05K3/0023 ,  H05K3/0041 ,  H05K2201/2081 ,  H05K2203/0554 ,  H05K2203/107 ,  H01L2924/00014 ,  H01L2924/013

Abstract: The field of the invention is making bonding bumps (22) on the pad areas (12) of a substrate (10). The technical problem is the time-consuming conventional processes for making thick (1-20 micron) bumps (22). The invention's solution is depositing the bumps (22) by localized metal cluster ion deposition. One embodiment includes depositing a layer (18a) of metallic adhesion material over a surface on substrate (10a), depositing metallic bumps (40) on the metallic adhesion material over each of the pad areas (12a) using a focused liquid metal ion source (20), and chemically etching the layer (18a) of metallic adhesion material off the surface outside of the deposited bumps (40). The principal use of the invention is making bonding bumps on integrated circuit chips.

Abstract translation: 本发明的领域是在衬底（10）的焊盘区域（12）上形成焊接凸块（22）。 技术问题是制造厚（1-20微米）凸块（22）的耗时的常规方法。 本发明的解决方案是通过局部金属簇离子沉积沉积凸块（22）。 一个实施例包括在衬底（10a）上的表面上沉积金属粘合材料层（18a），使用聚焦液体金属离子源（金属粘合材料）上的金属粘合材料沉积在每个焊盘区域（12a）上的金属凸块（40） 20），并且将金属粘合材料的层（18a）化学蚀刻在沉积的凸块（40）外面的表面之外。 本发明的主要用途是在集成电路芯片上形成接合凸块。

公开(公告)号：WO1992002030A1

公开(公告)日：1992-02-06

申请号：PCT/US1990005963

申请日：1990-10-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  ZIMMERMAN, Stephen, Michael

IPC: H01J01/30

CPC classification number: H01J9/025 ,  H01J21/105 ,  H01J2201/30457 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

Abstract translation: 本发明一般涉及一种新的集成真空微电子器件（VMD）及其制造方法。 真空微电子器件需要几种独特的三维结构：尖锐的场发射尖端，尖端在真空环境中的控制栅格结构内的精确对准以及用于收集尖端发射的电子的阳极。 还公开了形成二极管，三极管，四极管，五极管和其他类似结构的新结构和工艺。 所制造的最终结构也可以连接到其他类似的VMD设备或其他电子设备。