Abstract:
The intensity at which electrons emitted by a first plate structure (10) in a slat-panel display strike a second plate structure (12) for causing it to emit light is controlled so as to reduce image degradation that could otherwise arise from undesired electron-trajectory changes caused by effects such as the presence of a spacer system (14) between the plate structures. An electron-emissive region (20) in the first plate structure typically contains multiple laterally separated electron-emissive portions (201 and 202) for selectively emitting electrons. An electron-focusing system in the first plate structure has corresponding focus openings (40p1 and 40p2) through which electrons emitted by the electron-emissive portions respectively pass. Upon being struck by the so-emitted electrons, a light-emissive region (22) in the second plate structure emits light to produce at least part of a dot of the display's image.
Abstract:
Openings are created in a structure by a process in which a plate (20) is furnished with a sacrificial patterned masking layer divided into multiple laterally separated mask portions (22A). A primary layer of actinic material (28) is provided over the masking layer and in the space between the mask portions. Material of the primary layer that is not shadowed by a mask formed with the mask portions is backside exposed to actinic radiation (30). Material of the primary layer not exposed to the radiation is removed. Segments of the masking layer not covered by exposed material of the primary layer are then removed. Consequently, openings extend through the primary layer where the segments of the masking layer have been removed. The process is typically employed in forming an optical device such as a flat-panel cathode-ray tube display in which the openings in the primary layer receive light-emissive material.
Abstract:
A present invention field emission display brightness compensation system and method is capable of providing uniform display correction. In one present compensation system and method a masking process is utilized that adjusts the emissions for a particular area (330, 350, 370, 390). In one exemplary implementation, the relative value of a pixel driver voltage is adjusted to correspond to a base brightness area. For example, an emitter uniformity area adjustment table is utilized to adjust the voltage value of the emitters. In emitter uniformity area adjustment table provides a correlation between a pixel location and a brightness level adjustment. The emitter uniformity area adjustment tables are utilized to create a software filtering mask that provides compensation for uniformity differences between different spots or areas in the display.
Abstract:
A method for attaching a faceplate and a backplate (205) of a field emission display device (200). Specifically, one embodiment of the present invention discloses a method for protecting a silicon nitride passivation layer (290) from reacting with a glass seal sealing material (260) that contains lead oxide during an oven sealing or laser sealing process (350). The passivation layer (290) protects row and column electrodes (220, 230) in the display device (200). A barrier material (280) fully encapsulates the silicon nitride passivation layer (290). In one embodiment, silicon dioxide is the barrier material (280). In another embodiment, spin-on-glass is the barrier material (280). In still another embodiment, cermet is the barrier material (280).
Abstract:
A flat-panel display is hermetically sealed by a process in which a first plate structure (30) is positioned generally opposite a second plate structure (32) such that sealing material (34) provided over the second plate structure lies between the plate structures. In a gravitational sealing technique, the first plate structure is positioned vertically below the second plate structure. The sealing material is heated so that it moves vertically downward under gravitational influence to meet the first plate structure and seal the plate structures together. In a global-heating gap-jumping technique, the plate structures and sealing material are globally heated to cause the sealing material to jump a gap between the sealing material and the first plate structure. When the first plate structure is positioned vertically above the second plate structure, the sealing material moves vertically upward to meet the first plate structure and close the gap.
Abstract:
A field emission display (700) having an improved operational life. In one embodiment, the field emission display (700) comprises a plurality of row lines (230), a plurality of column lines (250), and a plurality of electron emissive elements (40) disposed at intersections of the plurality of row lines (230) and column lines (250), a column driver circuit (740) and a row driver circuit (720). The column driver circuit (740) is coupled to drive column voltage signals over the plurality of column lines (250); and the row driver circuit (720) is coupled to activate and deactivate the plurality of row lines (230) with row voltage signals. According to the present invention, operation life of the field emission display is extended when the electron emissive elements are intermittently reverse-biased by the column voltage signals and the row voltage signals. In another embodiment, the row driver circuit is responsive to a SLEEP signal (770). The row driver circuit (720), upon receiving the SLEEP signal (770), drives a sleep-mode voltage over the row lines (230) to reverse-bias the electron emissive elements.
Abstract:
A method for uniformly depositing polymer particles (800) onto the surface of a gate metal layer during the formation of a gate electrode. In one embodiment, the present invention comprises immersing a substrate (906) having a layer of a gate metal disposed over the surface thereof in a fluid bath (902) containing polymer particles. Additionally, in the present embodiment, the layer of gate metal disposed over the substrate has approximately the same thickness as a desired thickness of the gate electrode to be formed. Next, the present embodiment applies a uniform potential across the surface of the layer of gate metal such that the polymer particles (800) are uniformly deposited onto the layer of gate metal with a spatial density of approximately 100,000,000 to 1,000,000,000,000 particles per square centimeter. In the present embodiment the polymer particles adhere to the surface of the layer of gate metal via Van der Waal's forces and/or via a charge difference between each particle and the layer of gate metal. The present embodiment then removes the substrate having the layer of the gate metal and the particles deposited thereon from the fluid bath.
Abstract:
An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode. The resistor can be formed in a manner self aligned to control electrodes (38 or 52A/58B) of the device or with a separate resistor mask.
Abstract:
A method for forming a conductively coated matrix structure for separating rows and columns of sub-pixels (106) on the faceplate (104) of a flat panel display device. One embodiment deposits a photoresistive material (108) over the interior surface (102) of a faceplate having a non-conductive opaque matrix structure (100) formed thereon, and into sub-pixel regions separated by the matrix structure. The photoresistive material is dried and exposed to light (112) in the sub-pixel regions. After unexposed photoresistive material (110) is removed, a layer of aluminum is evaporated onto the interior surface of the faceplate such that the matrix structure and the exposed layer of photoresistive material in the sub-pixel regions is coated with conductive aluminum. Next, an etchant is applied to the exposed photoresistive material disposed in the sub-pixel regions, removing the exposed photoresistive material and the overlying Al layer from the sub-pixel regions, such that the conductive Al layer remains only on the matrix structure, and does not cover the sub-pixel regions.
Abstract:
A method for forming a gate electrode comprises depositing a gate metal (604) over an insulating substrate (602) and etching openings in areas of the gate layer which are exposed through a hard mask. The layer of the gate metal (604) is deposited to a thickness approximately the same as the thickness desired for the gate electrode. Next, polymer particles (700) are deposited over the layer of gate metal. A hard mask layer (800) is then deposited over the polymer particles and the layer of gate metal. Then the polymer particles (700) and portions of the hard mask (800) which overlie the polymer particles are removed such that first regions of the gate metal (604) are exposed while second regions remain covered by the hard mask. After openings have been formed completely through the gate metal in the first regions, the remaining portions of the hard mask are removed.