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公开(公告)号：KR1020060080216A
公开(公告)日：2006-07-07
申请号：KR1020067005788
申请日：2004-09-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/26
CPC classification number: H01L21/67115 , H01L21/324 , H01L21/67109
Abstract: Disclosed is a heat treatment apparatus for conducting heat treatments such as annealing at a temperature not less than 400°C on an object such as a silicon wafer. The apparatus comprises a process chamber (4) which has a transmitting window (8) in a ceiling portion. A stage (10) on which an object to be treated (W) is placed is so arranged in the chamber as to face the transmitting window. Heating lamps (42A, 42B) are arranged above the process chamber for heating the object through the transmitting window by irradiating the object with heat rays. The stage (10) is provided with a thermoelectric converter (24) which is at least capable of cooling the object. Consequently, the object is mainly heated through irradiation of heat rays from the heating lamps, and forcedly cooled down using the thermoelectric converter.
Abstract translation: 公开了一种用于进行热处理的热处理装置，例如在诸如硅晶片的物体上在不低于400℃的温度下退火。 该装置包括处理室（4），其在顶部具有发射窗（8）。 放置待处理物体（W）的台架（10）配置在室内面对发射窗口。 加热灯（42A，42B）设置在处理室的上方，用于通过用热射线照射物体通过透射窗加热物体。 级（10）设置有至少能够冷却物体的热电转换器（24）。 因此，主要通过照射来自加热灯的热射线来加热物体，并使用热电转换器强制冷却。
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公开(公告)号：KR101168827B1
公开(公告)日：2012-07-25
申请号：KR1020117016768
申请日：2008-09-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
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公开(公告)号：KR101059314B1
公开(公告)日：2011-08-24
申请号：KR1020097004654
申请日：2007-08-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/26
CPC classification number: H01L21/67115 , H01L21/67109 , H01L31/1864 , Y02E10/50 , Y02P70/521
Abstract: Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.
Abstract translation: 本发明提供一种退火装置，其不存在因发热引起的发光量减少而导致的光能量利用率降低，能够维持稳定的性能的问题。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b，其包括LED33并面向晶片W的表面以向晶片W上照射光; 透光构件18a和18b，其与加热源17a和17b对齐地布置以透射从LED 33发射的光; 在处理容器1的相反侧支撑透光部件18a和18b以便与加热源17a和17b直接接触并由高热导率材料制成的冷却部件4a和4b; 以及用冷却剂冷却冷却构件4a和4b的冷却机构。
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公开(公告)号：KR1020110089886A
公开(公告)日：2011-08-09
申请号：KR1020117016768
申请日：2008-09-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
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公开(公告)号：KR1020110009187A
公开(公告)日：2011-01-27
申请号：KR1020107026632
申请日：2009-06-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/268 , H01L21/324
CPC classification number: H01L21/67115
Abstract: 본 발명은 피처리체에 대하여 어닐링 처리를 시행하는 어닐링 장치에 있어서, 상기 피처리체가 수용되는 처리 용기와, 상기 처리 용기 내에서 상기 피처리체를 지지하는 지지 수단과, 상기 처리 용기 내에 처리 가스를 공급하는 가스 공급 수단과, 상기 처리 용기 내의 분위기를 배기하는 배기 수단과, 상기 피처리체의 이면 전체를 향하여 가열광을 조사하는 복수의 레이저 소자를 갖는 이면측 가열 수단을 구비한 것을 특징으로 하는 어닐링 장치이다.
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Patent Agency Ranking
公开(公告)号：KR100977886B1
公开(公告)日：2010-08-24
申请号：KR1020087006943
申请日：2006-09-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67115 , H01L21/324 , H01L21/67109
Abstract: 피처리체(W)에 대하여 소정의 열처리를 실시하도록 한 열처리 장치(2)와, 배기 가능하게 이루어진 처리 용기(4)와, 상기 처리 용기(4)내에 마련되어, 그 상면측에 상기 피처리체를 탑재시키기 위한 탑재대(18)와, 상기 탑재대(18)의 상부에 마련된 복수의 열전 변환 소자(22)와, 상기 처리 용기의 천장부를 기밀히 덮는 광투과창(8)과, 상기 처리 용기(4)내를 향해서 필요한 가스를 도입하는 가스 도입 수단(12)을 구비하고 있다. 상기 광투과창(8)의 상방에, 상기 피처리체를 향해서 가열용의 빛을 사출하는 반도체 광사출 소자(58)을 포함하는 복수의 가열 광원(52)으로 이루어지는 가열 수단(46)이 마련되어 있다. 이것에 의해, 가열 효율이 높고, 또한 피처리체에 대하여 한층 더 고속에서의 승온 및 강온이 가능해진다.
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公开(公告)号：KR1020100041817A
公开(公告)日：2010-04-22
申请号：KR1020107002723
申请日：2008-09-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
Abstract: An annealing apparatus is provided with a processing chamber (1) wherein a wafer (W) is stored; heating sources (17a, 17b) which are arranged to face the surface of the wafer (W) and have a plurality of LEDs (33) for irradiating the wafer (W) with light; and light transmitting members (18a, 18b), which are arranged corresponding to the heating sources (17a, 17b) and transmit light emitted from the light emitting element (33). The heat sources (17a, 17b) are constituted by attaching a plurality of the light emitting elements (33) on a supporting body (32) to face the wafer (W), and each of the light emitting elements is separately covered with a lens layer (20) composed of a transparent resin.
Abstract translation: 退火装置设有处理室（1），其中晶片（W）被储存; 所述加热源（17a，17b）配置成与所述晶片（W）的表面相对配置并且具有用于用光照射所述晶片（W）的多个LED（33） 以及对应于加热源（17a，17b）布置并透射从发光元件（33）发射的光的透光构件（18a，18b）。 热源（17a，17b）通过将多个发光元件（33）附着在支撑体（32）上以面对晶片（W）而构成，并且每个发光元件分别被透镜覆盖 层（20）由透明树脂构成。
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公开(公告)号：KR100919330B1
公开(公告)日：2009-09-25
申请号：KR1020080073221
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: 본 발명은 피처리체에 대해 성막 처리를 실시하기 위한 처리 챔버의 천정부에 설치되어 소정 가스를 공급하는 샤워 헤드 구조체로서, 복수의 가스 분사 구멍이 개구된 저부를 갖는 컵 형상으로 형성되고, 그 컵 형상의 개구측에 상기 천정부로의 장착용 접합 플랜지부가 일체적으로 형성된 헤드 본체와, 상기 헤드 본체의 저부 근방에 설치되어, 상기 헤드 본체를 원하는 온도로 조정하는 헤드 가열부를 구비하고, 저온하에서의 재현성을 향상시킨 성막 처리와 고온하에서의 반응 부생성물의 제거를 실행하는 샤워 헤드 구조체이다.
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公开(公告)号：KR1020080083243A
公开(公告)日：2008-09-17
申请号：KR1020080073222
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: A shower head structure and a gas processing apparatus are provided to prevent the friction between members by forming an adiabatic material including a resin in a gap between the members. A process chamber performs a substrate treatment process. The process chamber includes a shower head installed therein in order to supply a process gas. A gas injection unit includes a plurality of gas injection holes(94) which are formed at a bottom part of the shower head. A junction unit is formed at a top end of the shower head in order to install the shower head at a top end of the process chamber. A sidewall part and the shower head are formed with one body. The sidewall part includes a concave part(118) for reducing a sectional surface thereof.
Abstract translation: 提供了一种淋浴头结构和气体处理装置，以通过在构件之间的间隙中形成包括树脂的绝热材料来防止构件之间的摩擦。 处理室进行基板处理工艺。 处理室包括安装在其中以供应处理气体的淋浴喷头。 气体喷射单元包括形成在喷淋头的底部的多个气体喷射孔（94）。 接头单元形成在淋浴头的顶端，以将淋浴头安装在处理室的顶端。 侧壁部分和淋浴头形成有一个主体。 侧壁部分包括用于减小其截面的凹部（118）。
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公开(公告)号：KR1020080083242A
公开(公告)日：2008-09-17
申请号：KR1020080073221
申请日：2008-07-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205 , H01L21/02 , H01L21/00
CPC classification number: C23C16/45565 , C23C16/4405 , C23C16/4557 , C23C16/45572
Abstract: A gas processing apparatus is provided to enhance reproducibility of a layer by forming uniformly a thickness of a layer. A shower head is installed in the inside of a process chamber in order to supply a process gas. A plurality of gas injection holes(94) are formed at a bottom part of the shower head. A junction part is formed at a top end of the shower head in order to bond the shower head. A sealing member(110) is formed at a junction part between the process chamber and the shower head. An adiabatic material is inserted into a sealing side between the process chamber and the junction part.
Abstract translation: 提供一种气体处理装置，以通过均匀地形成层的厚度来增强层的再现性。 淋浴头安装在处理室的内部，以便提供处理气体。 多个气体喷射孔（94）形成在淋浴头的底部。 接头部分形成在淋浴头的顶端以便结合淋浴喷头。 密封构件（110）形成在处理室和淋浴头之间的接合部分处。 将绝热材料插入处理室和接合部分之间的密封侧。
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