公开(公告)号：KR101356696B1

公开(公告)日：2014-01-29

申请号：KR1020070082989

申请日：2007-08-17

Applicant: 삼성전자주식회사

Inventor： 강보수 ,  겐리치스테파노비치 ,  박영수 ,  이명재 ,  안승언 ,  이창범

IPC: H01L29/86 ,  H01L29/861

CPC classification number: H01L29/242 ,  H01L27/1021 ,  H01L27/24 ,  H01L29/24 ,  H01L29/267 ,  H01L29/8618

Abstract: 본 발명은 다이오드 구조체 및 이를 포함하는 메모리 소자에 관한 것이다. 다이오드 구조체에 있어서, 제 1전극 상기 제 1 전극 상에 형성된 p형 Cu 산화층 상기 p형 Cu 산화층 상에 형성된 n형 InZn 산화층 및 상기 n형 InZn 산화층 상에 형성된 제 2전극을 포함하는 다이오드 구조체 및 이를 포함하는 메모리 소자를 제공한다.

公开(公告)号：KR1020130023641A

公开(公告)日：2013-03-08

申请号：KR1020110086562

申请日：2011-08-29

Applicant: 삼성전자주식회사

Inventor： 전상훈 ,  송이헌 ,  안승언 ,  김영 ,  김창정 ,  전용우

IPC: G06F3/042 ,  G06F3/041

CPC classification number: G06F3/042 ,  G06F3/0386 ,  H01L27/14679 ,  G06F3/0412 ,  G06F3/0421

Abstract: PURPOSE: A light touch screen device capable of supporting remote sensing and touch sensing is provided to use an oxide semiconductor transistor of which the photosensitive property is excellent as a light sensing device, thereby easily manufacturing a large size light touch screen device. CONSTITUTION: Sensing pixels are arranged in rows and columns. The sensing pixels include a light sensing pixel(210p) and a touch sensing pixel(210t). The light sensing pixel senses the light of an external light source. The touch sensing pixel senses reflected display light when a screen is touched. The light sensing pixel includes a first light sensor transistor(112) and a first switch transistor(111), which are serially connected. The touch sensing pixel includes a second light sensor transistor and a second switch transistor, which are serially connected. The light sensing pixel and the touch sensing pixel are alternately arranged in a row.

Abstract translation: 目的：提供一种能够支持遥感和触摸感测的轻触摸屏设备，以使用感光性能优异的氧化物半导体晶体管作为光感测装置，从而容易地制造大尺寸的轻触摸屏装置。 构成：传感像素以行和列排列。 感测像素包括感光像素（210p）和触摸感测像素（210t）。 光感测像素感测外部光源的光。 当触摸屏幕时，触摸感测像素感测反射的显示光。 感光像素包括串联连接的第一光传感器晶体管（112）和第一开关晶体管（111）。 触摸感测像素包括串联连接的第二光传感器晶体管和第二开关晶体管。 光感测像素和触摸感测像素交替排列成一行。

公开(公告)号：KR1020120124225A

公开(公告)日：2012-11-13

申请号：KR1020110041992

申请日：2011-05-03

Applicant: 삼성전자주식회사

Inventor： 안승언 ,  송이헌 ,  전상훈 ,  김영

IPC: G06F3/042 ,  G06F3/041 ,  G09G3/20

CPC classification number: G06F3/0421 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042 ,  G06F2203/04109

Abstract: PURPOSE: An optical touch screen device and a driving method thereof are provided to reduce a time delay caused by a parasitic capacitance, thereby easily implementing enlargement. CONSTITUTION: A gate driving unit(120) provides a gate voltage and a reset signal to an optical sensing pixel(110). A signal outputting unit(130) receives an optical sensing signal from the optical sensing pixel and outputs a data signal. The gate driving unit provides the reset signal to the optical sensing pixel and gate lines providing the gate voltage to the optical sensing pixel. The gate driving unit includes a reset line connected to the optical sensing pixels. An array of the optical sensing pixels includes the optical sensing pixels arranged by row/columns. [Reference numerals] (120) Gate driving unit; (130) Signal outputting unit

Abstract translation: 目的：提供一种光学触摸屏装置及其驱动方法，以减少由寄生电容引起的时间延迟，从而容易实现放大。 构成：栅极驱动单元（120）向光学感测像素（110）提供栅极电压和复位信号。 信号输出单元（130）从光学感测像素接收光学感测信号并输出​​数据信号。 栅极驱动单元向光学感测像素提供复位信号，并将栅极电压提供给光学感测像素。 栅极驱动单元包括连接到光学感测像素的复位线。 光学感测像素的阵列包括由行/列排列的光学感测像素。 （附图标记）（120）门驱动单元; （130）信号输出单元

公开(公告)号：KR1020120120707A

公开(公告)日：2012-11-02

申请号：KR1020110038442

申请日：2011-04-25

Applicant: 삼성전자주식회사

Inventor： 전상훈 ,  송이헌 ,  안승언 ,  김창정 ,  김영

IPC: H01L27/14

CPC classification number: H01L27/14632 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14623

Abstract: PURPOSE: An optical sensing device and a driving method thereof are provided to improve the operation reliability of the optical sensing device by simply preventing a shift phenomenon of a threshold voltage generated in an oxide semiconductor transistor. CONSTITUTION: A switch transistor(130) and an optical sensor transistor(140) are formed on a substrate(101). The switch transistor and the optical sensor transistor have one common source and drain electrode(109). A first gate electrode(102) and a second gate electrode(103) are partially formed on the substrate. A gate insulation layer(104) is formed on the substrate, the first gate electrode, and the second gate electrode. A first source and drain electrode(108) and a second source and drain electrode(109) are formed on both sides of a first channel layer(106) and a second channel layer(107).

Abstract translation: 目的：提供一种光学感测装置及其驱动方法，通过简单地防止在氧化物半导体晶体管中产生的阈值电压的偏移现象来提高光学传感装置的操作可靠性。 构成：在基板（101）上形成开关晶体管（130）和光学传感器晶体管（140）。 开关晶体管和光学传感器晶体管具有一个公共源极和漏极（109）。 第一栅电极（102）和第二栅电极（103）部分地形成在基板上。 在基板，第一栅电极和第二栅电极上形成栅极绝缘层（104）。 在第一沟道层（106）和第二沟道层（107）的两侧形成有第一源极和漏极（108）和第二源极和漏极（109）。

公开(公告)号：KR1020090126530A

公开(公告)日：2009-12-09

申请号：KR1020080052666

申请日：2008-06-04

Applicant: 삼성전자주식회사

Inventor： 이창범 ,  박영수 ,  이명재 ,  강보수 ,  안승언 ,  김기환

IPC: H01L27/115 ,  H01L21/8247 ,  B82Y10/00

CPC classification number: H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  G11C13/0004

Abstract: PURPOSE: A resistance random access memory is provided to stably improve a switching characteristic by including a simple switch. CONSTITUTION: A switch region(12) is made of the material having a bipolar characteristic. A memory register(14) is made of the material having the unipolar characteristic. A bottom electrode is formed in the lower part of the switch region. An upper electrode is formed on the top of the memory register. A middle electrode(13) is formed between the switch region and the memory register.

Abstract translation: 目的：提供一种电阻随机存取存储器，通过包括简单的开关来稳定地提高开关特性。 构成：开关区域（12）由具有双极特性的材料制成。 存储器寄存器（14）由具有单极性特性的材料制成。 底部电极形成在开关区域的下部。 上部电极形成在存储器寄存器的顶部。 在开关区域和存储器寄存器之间形成中间电极（13）。

公开(公告)号：KR1020080110462A

公开(公告)日：2008-12-18

申请号：KR1020080031366

申请日：2008-04-03

Applicant: 삼성전자주식회사

Inventor： 안승언 ,  이명재 ,  김석필 ,  박영수

IPC: H01L21/8242 ,  H01L27/108

Abstract: A memory device is provided to obtain stabilized switching current without having an effect on the degree of integration by arbitrarily controlling the aspect ratio of a memory area and switch region. A memory device comprises a first electrode(11) and a second electrode(14), a memory register(13), and a switch fabric(12). The memory register is formed between the first electrode and the second electrode. The switch fabric controls the current applied to the memory register. The memory area of the memory register and switch region of the switch fabric are different.

Abstract translation: 提供存储器件以获得稳定的开关电流，而不通过任意地控制存储区域和开关区域的纵横比而对集成度产生影响。 存储器件包括第一电极（11）和第二电极（14），存储器寄存器（13）和开关织物（12）。 存储器寄存器形成在第一电极和第二电极之间。 交换结构控制应用于存储器寄存器的电流。 存储器寄存器的存储区域和交换结构的交换区域不同。

公开(公告)号：KR1020080105979A

公开(公告)日：2008-12-04

申请号：KR1020080020589

申请日：2008-03-05

Applicant: 삼성전자주식회사

Inventor： 이창범 ,  박영수 ,  선우문욱 ,  강보수 ,  안승언

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/04 ,  G11C13/0004 ,  H01L27/2409 ,  H01L45/16

Abstract: A resistivity memory device is provided to lower the manufacturing cost and increase the adhesion property with other films. A resistivity memory device comprises the first electrode(E1), the second electrode(E2), the first structure(S1), and the first switching device. The first electrode is at least one. The second electrode is arranged apart from the first electrode. The first structure is equipped between the first and the second electrode. The second structure comprises the first resistance alteration layer(R1). The first switching device is electrically connected to the first resistance alteration layer. At least one of the first and the second electrode comprises the alloy layer of the non-precious metals and noble metals.

Abstract translation: 提供电阻率记忆装置以降低制造成本并增加与其它膜的粘附性。 电阻率存储器件包括第一电极（E1），第二电极（E2），第一结构（S1）和第一开关器件。 第一电极是至少一个。 第二电极与第一电极分开设置。 第一结构装备在第一和第二电极之间。 第二结构包括第一电阻改变层（R1）。 第一开关装置电连接到第一电阻改变层。 第一和第二电极中的至少一个包括非贵金属和贵金属的合金层。

公开(公告)号：KR1020080000357A

公开(公告)日：2008-01-02

申请号：KR1020060058096

申请日：2006-06-27

Applicant: 삼성전자주식회사

Inventor： 김동철 ,  백인규 ,  서동석 ,  이명재 ,  안승언

IPC: G11C16/04 ,  G11C16/12

CPC classification number: G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C13/0038

Abstract: A threshold switching operation method of a nonvolatile memory device applying a pulse voltage is provided to enable low current operation with a low voltage. A nonvolatile memory device includes a substrate(20), a bottom electrode(22) on the substrate, a metal oxide(24) on the bottom electrode and a top electrode(26) on the metal oxide. According to a threshold switching operation method of the nonvolatile memory device, a pulse voltage is applied to the metal oxide. The metal oxide has a thickness of 10-100nm. The amplitude of the pulse voltage is 0.1-50V. Pulse duration of the pulse voltage is 10-20microseconds.

Abstract translation: 提供施加脉冲电压的非易失性存储器件的阈值切换操作方法以使得能够以低电压进行低电流操作。 非易失性存储器件包括衬底（20），衬底上的底电极（22），底电极上的金属氧化物（24）和金属氧化物上的顶电极（26）。 根据非易失性存储器件的阈值切换操作方法，对金属氧化物施加脉冲电压。 金属氧化物的厚度为10-100nm。 脉冲电压的幅度为0.1-50V。 脉冲电压的脉冲持续时间为10-20微秒。

公开(公告)号：KR100668348B1

公开(公告)日：2007-01-12

申请号：KR1020050108125

申请日：2005-11-11

Applicant: 삼성전자주식회사

Inventor： 김동철 ,  유인경 ,  이명재 ,  서순애 ,  백인규 ,  안승언 ,  박병호 ,  차영관 ,  박상진

IPC: H01L27/115

CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/143 ,  H01L45/144

Abstract: A nonvolatile memory device and its manufacturing method are provided to realize stable memory switching characteristics by using contact layers for improving interface characteristics. A storage node(128) is connected to a switching device. The storage node includes a first electrode(123) and a second electrode(127). A data storing layer(125) is disposed between the first and the second electrodes and made of a transition metal oxide layer and an aluminum oxide layer. Contact layers(124,126) are formed on at least one surface of un upper surface and a lower surface of the data storing layer and made of a transition metal oxide layer. The contact layers increase interface characteristics between the first and the second electrodes.

Abstract translation: 提供非易失性存储器件及其制造方法，通过使用接触层来改善界面特性来实现稳定的存储器切换特性。 存储节点（128）连接到交换设备。 存储节点包括第一电极（123）和第二电极（127）。 数据存储层（125）设置在第一和第二电极之间，由过渡金属氧化物层和氧化铝层制成。 接触层（124,126）形成在数据存储层的上表面和下表面的至少一个表面上，并由过渡金属氧化物层制成。 接触层增加第一和第二电极之间的界面特性。

公开(公告)号：KR1020060105360A

公开(公告)日：2006-10-11

申请号：KR1020050028088

申请日：2005-04-04

Applicant: 삼성전자주식회사

Inventor： 안승언 ,  이명재 ,  김동철 ,  유인경 ,  서형석 ,  서순애

IPC: H01L27/115

CPC classification number: H01L27/0629 ,  H01L21/28273 ,  H01L21/823468

Abstract: 인가 전압에 따라 저항이 변하는 저항체를 메모리 노드 사용하는 불휘발성 메모리 소자와 그 제조 및 동작 방법에 관해 개시되어 있다. 개시된 본 발명의 불휘발성 메모리 소자는 표면에 버퍼층이 구비된 기판, 상기 버퍼층 상에 이격되게 형성된 소오스 및 드레인, 상기 소오스 및 드레인사이에 구비된 핀 채널, 상기 핀 채널과 상기 버퍼층사이에 구비되어 있고 상기 소오스 및 드레인에 연결된 메모리 노드, 상기 핀 채널과 상기 메모리 노드를 덮는 게이트 절연막 및 상기 소오스 및 드레인과 이격되어 있고 상기 게이트 절연막을 덮는 게이트 전극을 포함하는 것을 특징으로 한다. 상기 메모리 노드는 전이금속 산화막일 수 있고, 상기 게이트 전극과 상기 소오스 및 드레인사이에 스페이서가 구비될 수 있다.