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公开(公告)号：KR1020080058897A
公开(公告)日：2008-06-26
申请号：KR1020060133094
申请日：2006-12-22
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L27/1229 , H01L27/1277 , H01L27/3262
Abstract: A method for manufacturing a unit pixel driving device of an organic light emitting display is provided to improve a manufacturing process by forming simultaneously channels of a switching transistor and a driving transistor. An amorphous silicon layer including a first and second amorphous regions is formed on a substrate(10). The first and second amorphous regions are formed on the same plane. A hydrophobic self-assembled monolayer is formed on the first amorphous region. A solution including nickel particles is coated on the second amorphous region and the hydrophobic self-assembled monolayer by using a hydrophilicity difference so that the amount of nickel particles of the second amorphous region is larger than the amount of nickel particles of the hydrophobic self-assembled monolayer. The hydrophobic self-assembled monolayer is evaporated by an annealing process. A first and second crystalline regions are formed by crystallizing the first and second amorphous regions. A first and second channel regions are formed by patterning the first and second crystalline regions. A first and second electrodes(50,60) are formed on the first and second channel regions.
Abstract translation: 提供一种用于制造有机发光显示器的单位像素驱动装置的方法，以通过同时形成开关晶体管和驱动晶体管的沟道来改善制造工艺。 在基板（10）上形成包括第一和第二非晶区域的非晶硅层。 第一和第二非晶区域形成在同一平面上。 在第一非晶区上形成疏水性自组装单层。 通过使用亲水性差异将包含镍颗粒的溶液涂覆在第二非晶区域和疏水性自组装单层上，使得第二非晶区域的镍颗粒的量大于疏水性自组装的镍颗粒的量 单层。 疏水性自组装单层通过退火工艺蒸发。 第一和第二结晶区域通过使第一和第二非晶区域结晶而形成。 通过图案化第一和第二晶体区域形成第一和第二沟道区域。 第一和第二电极（50,60）形成在第一和第二沟道区上。
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公开(公告)号：KR1020070024196A
公开(公告)日：2007-03-02
申请号：KR1020050078881
申请日：2005-08-26
Applicant: 삼성전자주식회사
IPC: H01L21/203
CPC classification number: H01L21/02381 , C23C14/165 , C23C14/5813 , H01L21/02422 , H01L21/02488 , H01L21/02631
Abstract: A method for forming a silicon thin film is provided to form a high-quality polycrystalline silicon in a glass substrate or a plastic substrate as well as a silicon wafer by using a proper process pressure and an RF output in a sputtering process performed on silicon as a target material while using Xe as a sputtering gas. Xe ions generated by an RF power not lower than 200 watts are collided with a silicon target material to generate silicon particles from a silicon target. The silicon particles are deposited on a predetermined substrate at a process pressure not higher than 5 millitorr. An annealing process is performed at a predetermined temperature.
Abstract translation: 提供一种形成硅薄膜的方法，通过在硅上进行的溅射工艺中使用适当的工艺压力和RF输出，在玻璃基板或塑料基板以及硅晶片中形成高质量的多晶硅 使用Xe作为溅射气体时的目标材料。 由不低于200瓦的RF功率产生的Xe离子与硅靶材料碰撞，以从硅靶产生硅颗粒。 硅颗粒以不高于5毫托的工艺压力沉积在预定的基材上。 在预定温度下进行退火处理。
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公开(公告)号：KR1020060099870A
公开(公告)日：2006-09-20
申请号：KR1020050021377
申请日：2005-03-15
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/66757 , H01L29/4908 , H01L29/42384
Abstract: 캡핑막을 구비하는 박막 트랜지스터 및 그 제조 방법에 관해 개시한다. 여기서, 본 발명은 기판, 상기 기판 상에 형성된 버퍼막, 상기 버퍼막 상에 형성되어 있고, 제1 및 제2 불순물 영역과 채널 영역을 포함하는 폴리 실리콘층, 상기 폴리실리콘층의 상기 채널영역 상에 순차적으로 적층된 게이트 절연막 및 게이트 전극 및 상기 게이트 전극 상에 적층된 캡핑막을 포함하는 것을 특징으로 하는 박막 트랜지스터 및 그 제조 방법을 제공한다.
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公开(公告)号：KR1020060041414A
公开(公告)日：2006-05-12
申请号：KR1020040090495
申请日：2004-11-08
Applicant: 삼성전자주식회사
IPC: H01L21/20 , H01L21/203
CPC classification number: H01L29/66765 , C23C14/3464 , C23C14/46 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02631
Abstract: 양질의 다결정 실리콘 TFT의 제조 방법에 관해 개시된다. 본 발명에 따른 다결정 실리콘 TFT의 제조방법은:
게이트 위에 게이트 절연물질층과 비정질 실리콘층을 IBD(Ion Beam Deposition)에 의해 다결정 실리콘을 형성하는 단계; IBD로 증착된 비정질 실리콘층 위에 게이트 절연물질층을 형성하는 단계;를 포함한다.
다결정, 바텀, 게이트, TFTAbstract translation: 公开了一种在衬底上制备半导体膜的方法。 该方法包括在沉积室中布置绝缘衬底，并使用离子束沉积将半导体膜沉积到绝缘衬底上，其中沉积期间绝缘衬底的温度不超过250℃。该方法可以产生薄膜晶体管 。 所公开的离子束沉积方法在较低温度和低杂质下形成具有所需光滑度和晶粒尺寸的膜形态。 能够在诸如塑料柔性基底的低熔点基底上沉积半导体膜。
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公开(公告)号：KR1020050054788A
公开(公告)日：2005-06-10
申请号：KR1020030088423
申请日：2003-12-06
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L21/02532 , H01L21/02164 , H01L21/02274 , H01L21/02354 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2026 , H01L21/31608 , H01L29/4908 , H01L29/66757 , H01L29/78675
Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.
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Patent Agency Ranking
公开(公告)号：KR101813169B1
公开(公告)日：2017-12-28
申请号：KR1020170032461
申请日：2017-03-15
Applicant: 삼성전자주식회사
IPC: G02F1/1362 , G02F1/133 , G09G3/36
Abstract: 전기적신뢰성이향상된능동형표시장치의스위칭소자및 그구동방법이개시된다. 개시된능동형표시장치의스위칭소자는직렬연결된다수의박막트랜지스터를포함한다. 따라서, 하나의스위칭소자내에서다수의박막트랜지스터가동시에온(ON)이되는시간이외에는, 하나의스위칭소자내의각각의박막트랜지스터에비동시적으로양의전압을인가함으로써스위칭소자의신뢰성을향상시킬수 있다.
Abstract translation: 公开了一种具有改善的电可靠性的有源矩阵显示装置的开关元件及其驱动方法。 有源显示装置的开关装置包括串联连接的多个薄膜晶体管。 因此，它可以，开关装置的可靠性由开关元件内将正电压施加到异步给每个在所述一方的开关元件的薄膜晶体管的提高比的时间的晶体管被同时导通（ON）薄膜的一些其他 。
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公开(公告)号：KR101600051B1
公开(公告)日：2016-03-07
申请号：KR1020100014739
申请日：2010-02-18
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , G02F1/136 , B82Y10/00
Abstract: 산화물반도체및 이를포함하는산화물박막트랜지스터에대해서개시된다. 상기산화물반도체는 In-Zn 산화물에 Hf이포함되어형성된것으로최적의조성범위를지닌산화물반도체를제공할수 있다.
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公开(公告)号：KR101510212B1
公开(公告)日：2015-04-10
申请号：KR1020080053128
申请日：2008-06-05
Applicant: 삼성전자주식회사
IPC: G02F1/136 , H01L29/786
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: 투명한산화물반도체를채널물질로사용하는산화물반도체박막트랜지스터의제조방법이개시된다. 개시되는산화물반도체박막트랜지스터의제조방법은, 채널층상에보호막을형성한다음, 100℃이상의온도에서 1시간이상열처리공정을수행하는단계를포함한다.
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公开(公告)号：KR101270174B1
公开(公告)日：2013-05-31
申请号：KR1020070124383
申请日：2007-12-03
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: 산화물반도체박막트랜지스터의제조방법이개시된다. 개시된제조방법은기판상에게이트를형성한다음, 이게이트를덮도록기판상에게이트절연막을형성하는단계; 게이트절연막상에산화물반도체로이루어진채널층을형성하는단계; 채널층의양측면상에각각소스및 드레인전극을형성하는단계; 채널층에산소를공급하기위한플라즈마처리공정을수행하는단계; 소스및 드레인전극과, 채널층을덮도록보호막을형성하는단계; 및보호막을형성한다음, 열처리공정을수행하는단계;를포함한다.
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公开(公告)号：KR1020110063252A
公开(公告)日：2011-06-10
申请号：KR1020100029352
申请日：2010-03-31
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/78606 , H01L27/1225 , H01L27/1248
Abstract: PURPOSE: A transistor, a method for manufacturing the same, and an electronic device including the transistor are provided to improve the reliability of a flat display apparatus by being adapted to the flat display apparatus. CONSTITUTION: A multi-layered structure includes a silicon oxide layer(10), a silicon oxynitride layer(20), and a silicon nitride layer(30). The silicon oxide layer is capable of being formed at low temperature between 100 and 250 degrees Celsius or at high temperature between 250 and 450 degrees Celsius. The characteristic change of a channel layer(C1) is suppressed by a protective layer(P1). The thicknesses of a gate(G1), the channel layer, a gate insulating layer, a source electrode(S1), a drain electrode(D1), and a protective layer are respectively between 50 and 300nm, between 40 and 100nm, between 50 and 400nm, between 10 and 200nm, between 10 and 200nm, and between 250 and 1200nm.
Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电子器件，以通过适用于平板显示装置来提高平板显示装置的可靠性。 构成：多层结构包括氧化硅层（10），氧氮化硅层（20）和氮化硅层（30）。 氧化硅层能够在低于100摄氏度至250摄氏度的低温或250至450摄氏度的高温下形成。 通过保护层（P1）抑制沟道层（C1）的特性变化。 栅极（G1），沟道层，栅极绝缘层，源极（S1），漏极（D1）和保护层的厚度分别为50〜300nm，40nm〜100nm，50nm 在400nm和200nm之间，在10nm和200nm之间，在250nm和1200nm之间。
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