公开(公告)号：KR1020080111964A

公开(公告)日：2008-12-24

申请号：KR1020070060575

申请日：2007-06-20

Applicant: 삼성디스플레이 주식회사 ,  성균관대학교산학협력단

Inventor： 황태형 ,  염근영 ,  정창현 ,  이준희

IPC: H05B33/10

CPC classification number: C23C16/509 ,  C23C16/029 ,  C23C16/30 ,  C23C16/401 ,  C23C28/00 ,  H01J37/32091 ,  H01L51/5256

Abstract: An apparatus for depositing thin film capable of preventing delamination of protective film and method thereof are provided to reduce moisture permeability by improving light transmission. An apparatus(100) for depositing thin film forms a protective film having a structure in which an inorganic film and an organic film are laminated by turns on a substrate(10), and comprises a reaction chamber(110), a radio frequency electrode(120), a supporting substrate(130), a power supply unit, a first reaction gas supply unit(151), a second reaction gas supply unit(152), and an inert gas supply unit(153). The radio frequency electrode is installed inside the reaction chamber, and receives a radio frequency power. The supporting substrate is installed inside the reaction chamber, supports the substrate, and receives a bias voltage. The power supply unit supplies a radio frequency voltage and the bias voltage to the radio frequency electrode and the substrate. The first reaction gas supply unit supplies a first reaction gas inside the reaction chamber while forming the inorganic film on the substrate. The second reaction gas supply unit supplies a second reaction gas inside the reaction chamber while forming the inorganic film and the organic film on the substrate. The inert gas supply unit supplies an inert gas inside the reaction chamber while forming the inorganic film and the organic film on the substrate.

Abstract translation: 提供一种用于沉积能够防止保护膜分层的薄膜的设备及其方法，以通过改善透光性来降低透湿性。 一种用于沉积薄膜的设备（100）形成了一种保护膜，该保护膜具有将基底（10）上的无机膜和有机膜层叠的结构，并且包括反应室（110），射频电极 120），支撑基板（130），电源单元，第一反应气体供应单元（151），第二反应气体供应单元（152）和惰性气体供应单元（153）。 射频电极安装在反应室内，并接收射频电力。 支撑基板安装在反应室内，支撑基板，并接收偏置电压。 电源单元向射频电极和基板提供射频电压和偏置电压。 第一反应气体供给单元在反应室内供给第一反应气体，同时在基板上形成无机膜。 第二反应气体供给单元在反应室内供给第二反应气体，同时在基板上形成无机膜和有机膜。 惰性气体供给单元在反应室内供给惰性气体，同时在基板上形成无机膜和有机膜。

公开(公告)号：KR1020080081873A

公开(公告)日：2008-09-10

申请号：KR1020080061416

申请日：2008-06-27

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  박상덕 ,  박병재

IPC: H01L21/3065

CPC classification number: H01J37/32422 ,  H01L21/67069

Abstract: A neutral beam grid structure is provided to facilitate a micro-patterning process by maintaining a straightness of a neutral beam. An ion beam from an ion beam source(100) passes through a grid(200), which is located behind an ion source. Plural slits(300) are normally formed in a vertical direction on a surface of the grid. The slits are formed to be in a bar-like oval shape. A ratio of a diameter of the slit with respect to a hole size of the ion beam source lies between 1:0.3 and 1:0.5, such that a mechanical strength of the grid is increased. The number of slits formed on the grid is determined according to a grid size and a spacing between the grids.

Abstract translation: 提供中性束格栅结构以便通过维持中性光束的平直度来促进微图形化过程。 来自离子束源（100）的离子束通过位于离子源之后的栅格（200）。 多个狭缝（300）通常在网格的表面上沿垂直方向形成。 狭缝形成为棒状的椭圆形。 狭缝的直径相对于离子束源的孔尺寸的比率在1:0.3至1:0.5之间，使得网格的机械强度增加。 栅格上形成的狭缝的数量根据网格尺寸和网格之间的间距来确定。

公开(公告)号：KR100857840B1

公开(公告)日：2008-09-10

申请号：KR1020070021853

申请日：2007-03-06

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  박상덕 ,  박병재

IPC: H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32935

Abstract: A high-density plasma source and a controlling method thereof are provided to increase or decrease a size of a power electrode by forming a chamber with a conductive chamber. A conductive chamber(4) is used for forming a plasma generation space. A substrate is loaded on a lower part of the inside of the conductive chamber. An inductive coil(2) is installed in the inside or the outside of the conductive chamber. A power supply unit(6,7) generates plasma in the inside of the conductive chamber by applying RF power to at least one of the conductive chamber and the inductive coil. A control unit controls the power supply unit in order to control one of a gap between plasma sheaths formed in the inside of the conductive chamber or a profile. The power supply unit applies the power to each of plural regions of the conductive chamber.

Abstract translation: 提供高密度等离子体源及其控制方法，以通过形成具有导电室的室来增加或减小功率电极的尺寸。 导电室（4）用于形成等离子体产生空间。 衬底被装载在导电室的内部的下部。 感应线圈（2）安装在导电室的内部或外部。 电源单元（6,7）通过向导电室和感应线圈中的至少一个施加RF功率来在导电室的内部产生等离子体。 控制单元控制电源单元以控制形成在导电室内部的等离子体护套之间的间隙或者轮廓之一。 电源单元对导电室的多个区域中的每一个施加电力。

公开(公告)号：KR100801614B1

公开(公告)日：2008-02-11

申请号：KR1020070022192

申请日：2007-03-06

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  박상덕 ,  장재형

IPC: H01L29/778 ,  H01L21/3065

CPC classification number: H01L29/66621 ,  H01L29/66462

Abstract: A gate recess etching method of an HEMT(High Electron Mobility Transistor) device is provided to improve etch selectivity by using a neutral beam using neon particles instead of argon particles. A loading process is performed to load an HEMT device to an inside of an etch chamber(S200). An absorbing process is performed to apply an etch gas to an etching target layer of the HEMT device by inputting the etch gas into the inside of the etch chamber(S210). An etch gas removal process is performed to remove the remaining etch gas(S220). An irradiation process is performed to irradiate a neutral beam onto the etching target layer of the HEMT device(S230). An etching residue removal process is performed to remove etching residues(S240). The energy of the neutral beam is maintained to be smaller than the bond strength of the etching target layer.

Abstract translation: 提供HEMT（高电子迁移率晶体管）器件的栅极凹槽蚀刻方法，以通过使用氖颗粒代替氩颗粒使用中性束来提高蚀刻选择性。 执行加载过程以将HEMT装置加载到蚀刻室的内部（S200）。 通过将蚀刻气体输入到蚀刻室的内部，执行吸收处理以将蚀刻气体施加到HEMT器件的蚀刻目标层（S210）。 执行蚀刻气体去除工艺以除去剩余的蚀刻气体（S220）。 执行照射处理以将中性束照射到HEMT装置的蚀刻目标层上（S230）。 进行蚀刻残留物去除处理以去除蚀刻残留物（S240）。 中性光束的能量保持小于蚀刻目标层的结合强度。

公开(公告)号：KR100698387B1

公开(公告)日：2007-03-23

申请号：KR1020060014569

申请日：2006-02-15

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  박병재 ,  민경석

IPC: H01L33/22

Abstract: A GaN-based semiconductor light emitting device using a neutral beam etching apparatus and a method for manufacturing the same are provided to form a photonic crystal on a p type nitride semiconductor layer by reducing damage of an active layer and the p type nitride semiconductor layer in a rough etch process. An n type nitride semiconductor layer(20), an active layer(30), and a p type semiconductor layer(40) are sequentially grown on a substrate(10). The active layer and the p nitride semiconductor layer are partially etched to expose a part of the n type nitride semiconductor layer. A hole having a predetermined pattern is formed on the p type semiconductor layer which is not etched in the etch process. An n type electrode and a p type electrode are formed on the n type nitride semiconductor layer and the p type nitride semiconductor layer, respectively. The predetermined pattern is formed by using a neutral beam etching apparatus.

Abstract translation: 提供一种使用中性光束蚀刻装置的GaN基半导体发光器件及其制造方法，通过减少有源层和p型氮化物半导体层的损伤，在p型氮化物半导体层上形成光子晶体 粗蚀刻工艺。 在衬底（10）上依次生长n型氮化物半导体层（20），有源层（30）和p型半导体层（40）。 部分蚀刻有源层和p氮化物半导体层以暴露n型氮化物半导体层的一部分。 在蚀刻工艺中未被蚀刻的p型半导体层上形成具有预定图案的孔。 n型电极和p型电极分别形成在n型氮化物半导体层和p型氮化物半导体层上。 通过使用中性光束蚀刻装置形成预定图案。

公开(公告)号：KR20210000134A

公开(公告)日：2021-01-04

申请号：KR20190075038

申请日：2019-06-24

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  문무겸 ,  김동우 ,  장윤종

IPC: C23C14/32 ,  B22F1/00 ,  B22F9/14 ,  H05H1/24

Abstract: 나노입자코팅장치가개시된다. 상기나노입자코팅장치는유전체; 상기유전체상에배치되는제1 전극; 상기제1 전극의반대편에서상기유전체를상기제1 전극과의사이에두고, 상기유전체와이격되게배치되는제2 전극; 상기제1 전극및 상기제2 전극에전압을인가하는전원공급장치; 및상기제1 전극및 상기제2 전극에전압이인가되면플라즈마가발생하는영역으로서, 상기유전체와상기제2 전극사이에위치하는플라즈마발생부를포함하고, 상기제2 전극의일부또는전체는상기플라즈마발생부에노출되는것을특징으로한다.

公开(公告)号：KR102008158B1

公开(公告)日：2019-08-07

申请号：KR1020170057884

申请日：2017-05-10

Applicant: 성균관대학교산학협력단

Inventor： 이성주 ,  전재호 ,  박진홍 ,  염근영 ,  최승혁

IPC: H01L29/788 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L21/285 ,  H01L29/24

公开(公告)号：KR101817210B1

公开(公告)日：2018-01-15

申请号：KR1020160097949

申请日：2016-08-01

Applicant: 세메스 주식회사 ,  성균관대학교산학협력단

Inventor： 미쉬라 ,  이승배 ,  하창승 ,  염근영 ,  양경채 ,  박성우 ,  신태호

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32917 ,  H01L21/3065 ,  H01L21/32136 ,  H05H1/46

Abstract: 본발명은플라즈마를균일하게생성하고제어하기위한플라즈마발생장치, 그를포함하는기판처리장치, 및그 제어방법을제공한다. 본발명의일 실시예에따라챔버내부에제공되는기판상에플라즈마공정을수행하기위해플라즈마를발생시키는플라즈마발생장치는, 고주파전력을제공하는고주파전원; 및상기고주파전원으로부터고주파전력을공급받아상기챔버내부에공급되는가스를플라즈마상태로여기시키는플라즈마소스를포함하며, 상기플라즈마소스는복수의안테나를포함하며, 상기안테나들사이에는적어도하나의가변소자가연결될수 있다.

Abstract translation: 本发明提供一种用于均匀地产生和控制等离子体的等离子体产生装置，包括该等离子体的基板处理装置以及控制方法。 根据本发明的实施例，提供了一种等离子体产生设备，用于产生等离子体以对设置在腔室中的衬底执行等离子体处理，等离子体产生设备包括：用于提供高频功率的高频电源; 以及等离子体源，其从所述高频电源接收高频电力并且将供应到所述室中的气体激发成等离子体状态，其中所述等离子体源包括多个天线， 可以连接。

公开(公告)号：KR1020160130017A

公开(公告)日：2016-11-10

申请号：KR1020150061732

申请日：2015-04-30

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  김경남 ,  문무겸 ,  박진우 ,  성다인 ,  오종식 ,  오지수

IPC: H01B13/00 ,  H01B5/14 ,  H01B1/06 ,  H01B1/08 ,  H01B1/12 ,  H01B1/02

Abstract: 본발명은투명전극의제조방법및 이에의해제조된투명전극에관한것으로, 상기투명전극의제조방법은기재를준비하는기재준비단계; (1) 상기기재를표면처리하거나, (2) 상기기재에유기용매를코팅하여유기용매레이어를형성시키는기재처리단계; 상기기재상에금속나노와이어또는금속나노메쉬를코팅하는금속코팅단계; 상기금속나노와이어또는금속나노메쉬상에고분자, 산화물및 질화물중 적어도하나를포함한물질을코팅하여제1전극층을형성하는제1전극층형성단계; 및상기기재를제거하는기재제거단계를포함하는것을특징으로한다. 본발명에의하면, 표면거칠기가개선된투명전극을제공하여디스플레이소자또는플렉서블소자에유용하게적용할수 있다.

公开(公告)号：KR101463109B1

公开(公告)日：2014-11-20

申请号：KR1020120119405

申请日：2012-10-26

Applicant: 성균관대학교산학협력단

Inventor： 염근영 ,  전민환 ,  김경남 ,  김회준 ,  김태형

IPC: H05H1/34 ,  H05H1/46 ,  H01L21/3065

Abstract: 플라스마 발생 장치가 개시되며, 상기 플라스마 발생 장치는 멀티전극에 인가되는 펄스 신호를 통해 플라스마를 발생시키는 본체부; 상기 멀티전극에 각각 서로 상이한 주파수를 가지는 펄스 신호를 인가하는 소스 파워; 상기 소스 파워에 인가되는 클럭 신호를 조절하여 상기 멀티전극에 각각 인가되는 펄스 신호를 서로 동기화시키는 주 제어부를 포함하되, 상기 주 제어부는 상기 소스 파워에 인가되는 펄스 신호를 제어하여 상기 플라스마의 특성을 조절한다.