Abstract:
PURPOSE: A memory cell and a memory device using the same are provided to improve stability by preventing an electrode from being floated in a memory array area. CONSTITUTION: A ferroelectric transistor(110) is provided. A plurality of switching devices(111,112,113) are electrically combined with the ferroelectric transistor. A plurality of control lines transmit each control signal for controlling a plurality of switching device to each switching device. The plurality of switching devices are individually controlled based on each control signal to prevent each electrode of the ferroelectric transistor from being floated.
Abstract:
PURPOSE: A transparent transistor and a manufacturing method thereof are provided to improve the efficiency of a process and solve a contact resistor problem by forming a multilayer transparent conductive layer capable of improving transparency and conductivity. CONSTITUTION: A source electrode and a drain electrode(S/D) includes a lower transparent layer(110), a metal layer(120), and a multilayer structure of an upper transparent layer(130) and is formed on a substrate. A channel is formed between the source electrode and the drain electrode. The gate electrode(G) is formed by being aligned with the channel. The lower transparent layer or the upper transparent layer is formed into a transparency semiconductor layer same as the channel. The gate electrode has a lower transparent layer, a metal layer, and a multilayer of the upper transparent layer.
Abstract:
PURPOSE: A transparent signboard is provided to improve space utilization by displaying necessary information without interrupting a visual field of people. CONSTITUTION: A transparent signboard(200) includes a transparent display(200a), a controller(200b) and a interface unit(200c). The transparent display displays information in a transparent state. The transparent display is made of a transparent OLED and a transparent backplane. The transparent backplane includes a transparent oxide thin film transistor. The controller controls the transparent display. The interface unit supplies the interface between the controller and the transparent display.
Abstract:
PURPOSE: A composition for a sputtering target of an oxide semiconductor thin film, a method for manufacturing the sputtering target, and the sputtering target are provided to obtain a transparent oxide semiconductor film showing high mobility through a low-temperature process less than 300°C. CONSTITUTION: A method for manufacturing a sputtering target comprises the following steps: blending(S11) and crashing raw material powder consisting of aluminum oxide, zinc oxide, and tin oxide; molding(S12) the powder in a desired form; fist calcinating a molding product at 500 - 1000°C; pulverizing and mixing the molding product which is fist calcinated; and molding the mixed powder; sintering(S13) the molding product. Indium oxide is more included in the raw material powder.
Abstract:
A foldable display device using a transparent display is provided to output various images to respective transparent displays, thereby improving user's convenience. A transparent display unit(220) comprises a transparent display(222). The transparent display unit enables switching into a transparent mode transmitting light or a display mode outputting image data. A control unit(210) sets the transparent display in the transparent mode or the display mode based on a signal received during an activation state of a device. A lower panel housing is connected to the transparent display unit to enable folding and unfolding.
Abstract:
An organic light-emitting diode touch screen device and a manufacturing method thereof are provided to ensure a thin organic light-emitting diode touch screen device and to simplify a manufacturing process by using an infrared sensor. An organic light-emitting diode touch screen device comprises a display light-emitting unit and a touch sensing unit. The display light-emitting unit(200) includes a thin film transistor and an organic light-emitting diode controlled by the thin film transistor. The touch sensing unit(210) includes an infrared sensor and an infrared filter filtering and transmitting only infrared signals generated in the infrared sensor. The display light-emitting unit is arranged on the planar surface of the organic light-emitting diode touch screen device. The touch sensing unit is arranged between the display light-emitting units evenly.