-
公开(公告)号：KR1020120079282A
公开(公告)日：2012-07-12
申请号：KR1020110000493
申请日：2011-01-04
Applicant: 한국화학연구원
CPC classification number: C07F9/94 , C23C16/18 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel bismuth amino alkoxide compound with an amino alkoxide ligand and a method for preparing the same are provided to deposit a thin film or various alloys. CONSTITUTION: A bismuth amino alkoxide compound is denoted by chemical formula 1(Bi[O-A-NR^1R^2]_3) or formula 2(Bi[O-CR^3R^4(CH_2)_m-NR^1R^2]_3). A method for preparing the compound of chemical formula 1 comprises a step of reacting bismuth halide compound of chemical formula 2(BiX) with alkali metal salt of alcohol of chemical formula 4(M[O-A-NR_1R_2]). A bismuth compound of chemical formula 6(Bi[NR^5_2]_3) is prepared by reacting a bismuth halide compound of chemical formula 3(BiX_3) with alkali metal compounds of chemical formula 5(M[NR^5_2]). A bismuth-containing thin film is prepared using the bismuth amino alkoxide compounds as a precursor.
Abstract translation: 目的：提供一种具有氨基醇盐配体的新型铋氨基烷氧基化合物及其制备方法，以沉积薄膜或各种合金。 构成：铋氨基烷氧基化合物由化学式1（Bi [OA-NR] 1R ^ 2] _3）或式2（Bi [O-CR 3 3R 4（CH 2）m-NR 1 R 1）2] _3）。 制备化学式1化合物的方法包括使化学式2（BiX）的卤化铋化合物与化学式4的醇的碱金属盐（M [O-A-NR_1R_2]）反应的步骤。 通过使化学式3（BiX_3）的卤化铋化合物与化学式5的碱金属化合物（M [NR 5 - 5]]反应，制备化学式6的铋化合物（Bi [NR 5/2] _3）。 使用铋氨基醇盐化合物作为前体制备含铋的薄膜。
-
Patent Agency Ranking
公开(公告)号：KR1020120032720A
公开(公告)日：2012-04-06
申请号：KR1020100094200
申请日：2010-09-29
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , C01G15/00 , C01P2004/64 , C23C16/40
Abstract: PURPOSE: A novel gallium glycolate compounds and a method for preparing the same are provided to ensure excellent thermal stability and easy storage. CONSTITUTION: A gallium glycolate compound is denoted by chemical formula 1. The gallium glycolate compound is prepared by reacting gallium compounds of chemical formula 2(GaX^1_3) and glycolate compound of chemical formulas 3(HOCOCH_2OR^3) and 4(HOCH_2COOR^3). A gallium oxide thin film is formed by MOCVD using gallium glycolate compounds as a precursor.
Abstract translation: 目的：提供新型的乙醇酸镓化合物及其制备方法，以确保优异的热稳定性和易于储存。 构成：化学式1表示乙酸羟乙酯化合物。通过使化学式2的镓化合物（GaX 3）和化学式3（HOCOCH 2 OR 3）和4（HOCH 2 COOR 3）的乙醇酸化合物 ）。 通过MOCVD，使用乙酸羟乙酯化合物作为前体形成氧化镓薄膜。
-
公开(公告)号：KR101116402B1
公开(公告)日：2012-03-09
申请号：KR1020090048234
申请日：2009-06-01
Applicant: 한국화학연구원
IPC: C07F7/18 , C23C16/42 , H01L21/205
Abstract: 본발명에따른실리콘알콕사이드화합물은상온에서액체상태로존재하며낮은온도에서휘발되는특성을나타냄으로실리콘을포함하는물질의박막증착또는여러가지합금제조에실리콘원료물질로유용하게사용될수 있다.
-
公开(公告)号：KR1020110094686A
公开(公告)日：2011-08-24
申请号：KR1020100014241
申请日：2010-02-17
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , C01G15/00 , C01P2004/64 , C04B35/01 , C04B35/62222 , C04B2235/3286 , C23C16/18 , C23C16/40
Abstract: PURPOSE: A method for preparing a novel gallium compound using modified glycine is provided to ensure thermal stability and to prepare gallium oxide nanoparticles and a compound containing gallium. CONSTITUTION: A gallium dialkylglycinate is denoted by chemical formula 1. The compound of chemical formula 1 is prepared by reacting a gallium halide compound of chemical formula 2(GaX_3) with a compound of chemical formula 3(NaOCOCH_2NR_1R_2). A gallium oxide thin film is prepared using the compound of chemical formula 1 as a precursor.
Abstract translation: 目的：提供一种使用改性甘氨酸制备新型镓化合物的方法，以确保热稳定性和制备氧化镓纳米颗粒和含镓化合物。 构成：化学式1表示二烷基甘氨酸镓。化学式1的化合物通过使化学式2（GaX 3）的卤化镓化合物与化学式3的化合物（NaOCOCH 2 NR 1 R 2）反应而制备。 使用化学式1的化合物作为前体制备氧化镓薄膜。
-
公开(公告)号：KR1020110094677A
公开(公告)日：2011-08-24
申请号：KR1020100014231
申请日：2010-02-17
Applicant: 한국화학연구원
CPC classification number: C07F5/00 , C01G15/00 , C01P2004/64 , C04B35/01 , C04B35/62222 , C04B2235/3286 , C23C16/18 , C23C16/40
Abstract: PURPOSE: A novel indium compound using modified glycine and a method for preparing the same are provided to ensure thermal stability and easy handling and to be used as a precursor for producing a compound containing indium. CONSTITUTION: An indium dialkyl glycine compound is denoted by chemical formula 1. In chemical formula 1, R1 and R2 are independently linear or branched alkyl group of C1-C5. The compound of chemical formula 1 is prepard by reacting an indium halide compound of chemical formula 2(InX_3) with a compound of chemical formula 3(NaOCOCH_2NR_1R_2). An indium oxide thin film is prepared using the indium dialkyl glycine compound as a precursor.
Abstract translation: 目的：提供一种使用改性甘氨酸的新型铟化合物及其制备方法，以确保热稳定性和易于处理，并用作生产含铟化合物的前体。 构成：化学式1表示铟二烷基甘氨酸化合物。在化学式1中，R 1和R 2独立地为C1-C5的直链或支链烷基。 通过使化学式2的卤化铟化合物（InX 3）与化学式3的化合物（NaOCOCH 2 NR 1 R 2）反应来制备化学式1的化合物。 使用铟二烷基甘氨酸化合物作为前体制备氧化铟薄膜。
-
公开(公告)号：KR1020100129608A
公开(公告)日：2010-12-09
申请号：KR1020090048255
申请日：2009-06-01
Applicant: 한국화학연구원
IPC: C07F7/18 , C23C16/42 , H01L21/205
CPC classification number: C07F7/1804 , C23C16/24 , C23C16/401 , C23C16/45525 , H01L21/2053
Abstract: PURPOSE: A silicon amino alkoxide compound is provided to use as a silicon ingredient for thin film deposition or alloy manufacturing. CONSTITUTION: A silicon amino alkoxide compound is denoted by chemical formula 1. A silicon amino alkoxide compound is prepared by reacting alkali metal salt of chemical formulas 4(M^1O-A^1-ONR^1R^2) and 5(M^2O-A^2-ONR^4R^5) with a silicon compound of chemical formula 3([R^6]_3-a-bX^1_bX^2_aSi-SiX^1_nX^2_m[R^3]_3-n-m). A silicon-containing thin film is prepared using the silicon amino alkoxide compound as a precursor. The thin film is formed by metal organic chemical vapor deposition or atom layer deposition.
Abstract translation: 目的：提供硅氨基醇盐化合物作为薄膜沉积或合金制造的硅成分。 组成：硅烷氧基化合物由化学式1表示。硅氨基烷氧基化合物是通过使化学式4的碱金属盐（M 1 O-A 1 - ONR ^ 1R ^ 2）和5（M' 2 O-A ^ 2-ONR ^ 4R ^ 5）与化学式3的硅化合物（[R 6] 3-a-bX 1 1-x X 2 2-Si x Si 1 N x ^ 2] [R 3 3] _3nm） 。 使用硅氨基醇盐化合物作为前体制备含硅薄膜。 薄膜由金属有机化学气相沉积或原子层沉积形成。
-
-
-
-
-
Search Results
26
records
(took 0.024 seconds)
