公开(公告)号：SG11201704496RA

公开(公告)日：2017-07-28

申请号：SG11201704496R

申请日：2015-12-22

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201704280QA

公开(公告)日：2017-07-28

申请号：SG11201704280Q

申请日：2015-12-16

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA ,  GUEVENC HACI OSMAN ,  PROELSS JULIAN ,  LEUNISSEN LEONARDUS

IPC: C09G1/02 ,  H01L21/304 ,  H01L21/321

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：SG11201700255UA

公开(公告)日：2017-02-27

申请号：SG11201700255U

申请日：2015-07-14

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  SIEBERT MAX ,  LAN YONGQING ,  LAUTER MICHAEL ,  GUEVENC HACI OSMAN ,  PRÖLSS JULIAN ,  USMAN IBRAHIM SHEIK ANSAR ,  GOLZARIAN REZA

IPC: C09G1/00

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：SG11201408833YA

公开(公告)日：2015-01-29

申请号：SG11201408833Y

申请日：2013-06-21

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  LAUTER MICHAEL ,  CHIU WEI LAN WILLIAM

IPC: C09G1/02 ,  C09K3/14

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

公开(公告)号：SG11201404747UA

公开(公告)日：2014-09-26

申请号：SG11201404747U

申请日：2013-01-25

Applicant: BASF SE

Inventor： NOLLER BASTIAN MARTEN ,  LAUTER MICHAEL ,  LANGE ROLAND

IPC: H01L21/302 ,  H01L21/304 ,  H01L21/461 ,  H01L21/463

Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.

公开(公告)号：EP2870599A4

公开(公告)日：2016-03-30

申请号：EP13812480

申请日：2013-06-27

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  LI YUZHUO ,  LAUTER MICHAEL

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.

公开(公告)号：EP2870212A4

公开(公告)日：2016-03-30

申请号：EP13812726

申请日：2013-06-21

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  LAUTER MICHAEL ,  CHIU WEI LAN WILLIAM ,  LI YUZHUO

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.

公开(公告)号：EP3099756A4

公开(公告)日：2017-08-02

申请号：EP15743237

申请日：2015-01-21

Applicant: BASF SE

Inventor： LAUTER MICHAEL ,  LANGE ROLAND ,  NOLLER BASTIAN MARTEN ,  SIEBERT MAX

IPC: C09G1/18 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/76224

Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.

Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）胶态或气相无机颗粒或其混合物，（B）聚氨基酸和/或其盐和（M）水性介质。

公开(公告)号：EP3019569A4

公开(公告)日：2017-05-03

申请号：EP14823844

申请日：2014-07-01

Applicant: BASF SE

Inventor： REICHARDT ROBERT ,  KALLER MARTIN ,  LAUTER MICHAEL ,  LI YUZHUO ,  KLIPP ANDREAS

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自苯并三唑衍生物（用作腐蚀抑制剂）和（B）无机颗粒，有机颗粒或其复合物或混合物的化合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途，尤其是用于提高化学机械抛光（CMP）组合物用于从基底去除钽或氮化钽的选择性，用于制造 在所述衬底上存在铜的情况下的半导体器件。

公开(公告)号：EP2812911A4

公开(公告)日：2015-08-12

申请号：EP13746024

申请日：2013-01-25

Applicant: BASF SE ,  BASF SCHWEIZ AG

Inventor： LI YUZHUO ,  NOLLER BASTIAN MARTEN ,  LAUTER MICHAEL ,  LANGE ROLAND

IPC: H01L21/304 ,  C09G1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/463

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053