A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION

    公开(公告)号:SG11201700255UA

    公开(公告)日:2017-02-27

    申请号:SG11201700255U

    申请日:2015-07-14

    Applicant: BASF SE

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS
    29.
    发明公开
    CHEMICAL-MECHANICAL POLISHING COMPOSITION COMPRISING BENZOTRIAZOLE DERIVATIVES AS CORROSION INHIBITORS 有权
    ZUSAMMENSETZUNGFÜRCHEMISCH-MECHANISCHES POLIEREN MIT BENZOTRIAZOLDERIVATEN ALS KORROSIONSINHIBITOREN

    公开(公告)号:EP3019569A4

    公开(公告)日:2017-05-03

    申请号:EP14823844

    申请日:2014-07-01

    Applicant: BASF SE

    CPC classification number: C09K3/1463 C09G1/02 H01L21/3212

    Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

    Abstract translation: 提供化学机械抛光(CMP)组合物,其包含(A)一种或多种选自苯并三唑衍生物(用作腐蚀抑制剂)和(B)无机颗粒,有机颗粒或其复合物或混合物的化合物。 本发明还涉及选自苯并三唑衍生物的某些化合物作为腐蚀抑制剂的用途,尤其是用于提高化学机械抛光(CMP)组合物用于从基底去除钽或氮化钽的选择性,用于制造 在所述衬底上存在铜的情况下的半导体器件。

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