公开(公告)号：USD707641S1

公开(公告)日：2014-06-24

申请号：US29462300

申请日：2013-08-01

Applicant: Epistar Corporation

Designer： Shao-Ping Lu ,  Wen-Luh Liao ,  Shih-I Chen ,  Chia-Liang Hsu

公开(公告)号：US10693039B2

公开(公告)日：2020-06-23

申请号：US15602421

申请日：2017-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

公开(公告)号：US10693034B2

公开(公告)日：2020-06-23

申请号：US15683041

申请日：2017-08-22

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

IPC: H01L21/683 ,  H01L33/62 ,  H01L33/00

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US09685588B2

公开(公告)日：2017-06-20

申请号：US15083743

申请日：2016-03-29

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Cheng ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30 ,  H01L33/46

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.

公开(公告)号：US09478698B2

公开(公告)日：2016-10-25

申请号：US14174036

申请日：2014-02-06

Applicant: Epistar Corporation

Inventor： Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Yi-Ming Chen ,  Yi-Tang Lai ,  Jhih-Jheng Yang ,  Chih-Wei Wei ,  Ching-Sheng Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Ye-Ming Hsu

IPC: H01L33/02 ,  H01L33/00

CPC classification number: H01L33/02 ,  H01L33/0079

Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。

公开(公告)号：US09331247B2

公开(公告)日：2016-05-03

申请号：US14286685

申请日：2014-05-23

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh Liao ,  Shao-Ping Lu ,  Hung-Ta Chen ,  Shih-I Chen ,  Chia-Liang Hsu ,  Shou-Chin Wei ,  Ching-Pei Lin ,  Yu-Ren Peng ,  Chien-Fu Huang ,  Wei-Yu Chen ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.

Abstract translation: 发光元件包括反射层; 在反射层上的第一透明层; 在所述第一透明层上具有活性层的发光层; 以及形成在第一透明层中的空腔。

公开(公告)号：US20140014994A1

公开(公告)日：2014-01-16

申请号：US13932661

申请日：2013-07-01

Applicant: Epistar Corporation

Inventor： Shih-I Chen ,  CHIA-LIANG HSU ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang ,  Ching-Pei Lin

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。

公开(公告)号：US11211522B2

公开(公告)日：2021-12-28

申请号：US16908167

申请日：2020-06-22

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.

公开(公告)号：US10985301B2

公开(公告)日：2021-04-20

申请号：US16001676

申请日：2018-06-06

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L27/15 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/44 ,  H01L33/48 ,  H01L25/075 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

公开(公告)号：US10367118B2

公开(公告)日：2019-07-30

申请号：US15266249

申请日：2016-09-15

Applicant: EPISTAR CORPORATION

Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC: H01L33/10 ,  H01L33/12 ,  H01L33/42 ,  H01L33/38 ,  H01L33/46 ,  H01L33/30

Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.