公开(公告)号：US20140014994A1

公开(公告)日：2014-01-16

申请号：US13932661

申请日：2013-07-01

Applicant: Epistar Corporation

Inventor： Shih-I Chen ,  CHIA-LIANG HSU ,  Tzu-Chieh Hsu ,  Chun-Yi Wu ,  Chien-Fu Huang ,  Ching-Pei Lin

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。

公开(公告)号：US11349047B2

公开(公告)日：2022-05-31

申请号：US17114012

申请日：2020-12-07

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming Chen ,  Hao-Min Ku ,  Chih-Chiang Lu ,  Tzu-Chieh Hsu

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

公开(公告)号：US10090643B2

公开(公告)日：2018-10-02

申请号：US15794756

申请日：2017-10-26

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Yi-Wen Huang ,  Yi-Hung Lin ,  Chih-Chiang Lu

IPC: H01S5/187 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022 ,  H01S5/026 ,  H01S5/028 ,  H01S5/42

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

公开(公告)号：US09871171B2

公开(公告)日：2018-01-16

申请号：US14535995

申请日：2014-11-07

Applicant: EPISTAR CORPORATION

Inventor： Jen-Li Hu ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/42 ,  H01L33/38 ,  H01L33/14 ,  H01L33/40

CPC classification number: H01L33/46 ,  H01L33/14 ,  H01L33/145 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device comprises a light-emitting structure capable of emitting a light; an electrode formed on a side of the light-emitting structure; a transparent structure formed on a second side of the light-emitting structure, wherein the transparent structure is aligned to a region of the electrode, and comprises a first transparent layer and a second transparent layer around the first transparent layer; a contact structure formed on the second side of the light-emitting structure; and a reflective layer covering the transparent structure and the contact structure.

公开(公告)号：US09825088B2

公开(公告)日：2017-11-21

申请号：US14808295

申请日：2015-07-24

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Yi-Ming Chen ,  Yu-Ren Peng ,  Chun-Yu Lin ,  Chun-Fu Tsai ,  Tzu-Chieh Hsu

IPC: H01L29/06 ,  H01L31/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L27/153 ,  H01L33/005 ,  H01L33/08

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

公开(公告)号：US09793451B2

公开(公告)日：2017-10-17

申请号：US14553513

申请日：2014-11-25

Applicant: EPISTAR CORPORATION

Inventor： Chia-Liang Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Tzu-Chieh Hsu ,  Min-Hsun Hsieh

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/56 ,  H01L33/54 ,  H01L33/60 ,  F21V8/00 ,  H01L33/48

CPC classification number: H01L33/56 ,  G02B6/0025 ,  G02B6/0031 ,  G02B6/0073 ,  H01L33/48 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection.

公开(公告)号：US09530940B2

公开(公告)日：2016-12-27

申请号：US14589683

申请日：2015-01-05

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

IPC: H01L33/42 ,  H01L33/22 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US09508894B2

公开(公告)日：2016-11-29

申请号：US14908886

申请日：2013-07-29

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Ching-Pei Lin ,  Chung-Hsun Chien ,  Chien-Fu Huang ,  Hao-Min Ku ,  Min-Hsun Hsieh ,  Tzu-Chieh Hsu

IPC: H01L33/62 ,  H01L33/00 ,  H01L21/683

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

公开(公告)号：US09472719B2

公开(公告)日：2016-10-18

申请号：US14625156

申请日：2015-02-18

Applicant: EPISTAR CORPORATION

Inventor： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC: H01L33/10 ,  H01L33/12 ,  H01L33/42

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

Abstract: A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

Abstract translation: 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

公开(公告)号：US09461209B2

公开(公告)日：2016-10-04

申请号：US14853511

申请日：2015-09-14

Applicant: Epistar Corporation

Inventor： Min-Yen Tsai ,  Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Bo-Jiun Hu ,  Tzu-Yao Tseng ,  Jia-Kuen Wang ,  Kuan-Yi Lee ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/0012 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。