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    Multiple-qubit wave-activated controlled gate
    22.
    发明专利
    Multiple-qubit wave-activated controlled gate 未知

    公开(公告)号：GB2528196A

    公开(公告)日：2016-01-13

    申请号：GB201516760

    申请日：2014-01-21

    Applicant: IBM

    Inventor： CHOW JERRY ,  GAMBETTA JAY ,  MERKEL SETH ,  RIGETTI CHAD TYLER ,  STEFFEN MATTHIAS

    IPC: H01L49/00 ,  G06N99/00

    Abstract: A device includes a housing, at least two qubits disposed in the housing and a resonator disposed in the housing and coupled to the at least two qubits, wherein the at least two qubits are maintained at a fixed frequency and are statically coupled to one another via the resonator, wherein energy levels I03> and I12> are closely aligned, where in a tuned microwave signal applied to the qubit activates a two-qubit phase interaction.

    MULTIPLE CRYOGENIC SYSTEMS SECTIONED WITHIN A COMMON VACUUM SPACE
    23.
    发明专利
    MULTIPLE CRYOGENIC SYSTEMS SECTIONED WITHIN A COMMON VACUUM SPACE 未知

    公开(公告)号：AU2022205759A9

    公开(公告)日：2025-03-20

    申请号：AU2022205759

    申请日：2022-01-05

    Applicant: IBM

    Inventor： CORCOLES-GONZALEZ ANTONIO ,  GUMANN PATRYK ,  CHOW JERRY

    IPC: F25B9/10 ,  F25B9/12 ,  F25D19/00 ,  F28D15/02

    Abstract: Techniques facilitating multiple cryogenic systems sectioned within a common vacuum space are provided. In one example, a cryostat can comprise a plurality of thermal stages and a thermal switch. The plurality of thermal stages can intervene between a 4-Kelvin (K) stage and a Cold Plate stage. The plurality of thermal stages can include a Still stage and an intermediate thermal stage that can be directly coupled mechanically to the Still stage via a support rod. The thermal switch can be coupled to the intermediate thermal stage and an adjacent thermal stage. The thermal switch can facilitate modifying a thermal profile of the cryostat by providing a switchable thermal path between the intermediate thermal stage and the adjacent thermal stage.

    LOW THERMAL CONDUCTIVITY SUPPORT SYSTEM FOR CRYOGENIC ENVIRONMENTS
    24.
    发明专利
    LOW THERMAL CONDUCTIVITY SUPPORT SYSTEM FOR CRYOGENIC ENVIRONMENTS 未知

    公开(公告)号：AU2021417412B2

    公开(公告)日：2024-12-05

    申请号：AU2021417412

    申请日：2021-12-30

    Applicant: IBM

    Inventor： GUMANN PATRYK ,  GRENDANIN VALERIO ,  CHOW JERRY

    IPC: F25B9/12 ,  F25B9/10

    Abstract: Techniques facilitating low thermal conductivity support systems within cryogenic environments are provided. In one example, a cryostat can comprise a support rod and a washer. The support rod can couple first and second thermal stages of the cryostat. The washer can intervene between the support rod and the first thermal stage. The washer can thermally isolate the support rod and the first thermal stage.

    Fabricação de estruturas de transmon qubit flip-chip para dispositivos de computação quântica
    25.
    发明专利
    Fabricação de estruturas de transmon qubit flip-chip para dispositivos de computação quântica 未知

    公开(公告)号：BR112021025721A2

    公开(公告)日：2022-02-08

    申请号：BR112021025721

    申请日：2020-06-15

    Applicant: IBM

    Inventor： CHOW JERRY ,  ROSENBLATT SAMI

    IPC: H01L27/18 ,  G06N10/00 ,  H01L39/22 ,  H01L39/24

    Abstract: fabricação de estruturas de transmon qubit flip-chip para dispositivos de computação quântica. um dispositivo de computação quântica (300) é formado usando um primeiro chip (302) e um segundo chip (306), o primeiro chip tendo um primeiro substrato (303), um primeiro conjunto de blocos (312 a, b) e um conjunto de junções josephson (304) dispostas no primeiro substrato. o segundo chip tem um segundo substrato (307), um segundo conjunto de pads (308) disposto no segundo substrato oposto ao primeiro conjunto de pads e uma segunda camada (310 a, b) formada em um subconjunto do segundo conjunto de pads. a segunda camada é configurada para ligar o primeiro chip e o segundo chip. o subconjunto do segundo conjunto de pads corresponde a um subconjunto do conjunto de junções josephson selecionadas para evitar a colisão de frequência entre qubits em um conjunto de qubits. um qubit é formado usando uma junção josephson do subconjunto de junções josephson e outra junção josephson não no subconjunto tornando-se inutilizável para formar qubits.

    Transmon qubits with trenched capacitor structures
    27.
    发明专利
    Transmon qubits with trenched capacitor structures 未知

    公开(公告)号：AU2020271227A1

    公开(公告)日：2021-10-14

    申请号：AU2020271227

    申请日：2020-04-06

    Applicant: IBM

    Inventor： ADIGA VIVEKANANDA ,  SANDBERG MARTIN ,  CHOW JERRY ,  PAIK HANHEE

    IPC: H01L27/18 ,  G06N10/00 ,  H01L39/22 ,  H01L39/24

    Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

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