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公开(公告)号：AU2020385351A1
公开(公告)日：2022-04-21
申请号：AU2020385351
申请日：2020-11-10
Applicant: IBM
Inventor： HOLMES STEVEN , SADANA DEVENDRA , HART SEAN , BEDELL STEPHEN , LI NING , GUMANN PATRYK
Abstract: A quantum computing device is fabricated by forming, on a superconductor layer (410), a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer (340) outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region (240) surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate (204) is formed. A sensing region gate (202) is formed by coupling the semiconductor layer with a second metal layer. A chemical potential gate (208, 210) is also formed. A nanorod contact (206, 212) using the second metal within the portion of the device region outside the sensing region is formed.
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公开(公告)号：CA3176185A1
公开(公告)日：2021-12-23
申请号：CA3176185
申请日：2021-06-15
Applicant: IBM
Inventor： GUMANN PATRYK , CROSS ANDREW , HART SEAN , GAMBETTA JAY
Abstract: A quantum system includes a qubit array comprising a plurality of qubits. A bus resonator is coupled between at least one pair of qubits in the qubit array. A switch is coupled between the at least one qubit pair of qubits.
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公开(公告)号：SG11202110275QA
公开(公告)日：2021-10-28
申请号：SG11202110275Q
申请日：2020-06-19
Applicant: IBM
Inventor： JINKA OBLESH , OLIVADESE SALVATORE , HART SEAN , BRONN NICHOLAS , CHOW JERRY , BRINK MARKUS , GUMANN PATRYK , BOGORIN DANIELA
IPC: H01L23/367 , F25D19/00
Abstract: A thermalization structure is formed using a cover configured with a set of pillars, the cover being a part of a cryogenic enclosure of a low temperature device (LTD). A chip including the LTD is configured with a set of cavities, a cavity in the set of cavities having a cavity profile. A pillar from the set of pillars and corresponding to the cavity has a pillar profile such that the pillar profile causes the pillar to couple with the cavity of the cavity profile within a gap tolerance to thermally couple the chip to the cover for heat dissipation in a cryogenic operation of the chip.
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公开(公告)号：AU2020250769A1
公开(公告)日：2021-09-30
申请号：AU2020250769
申请日：2020-03-18
Applicant: IBM
Inventor： HART SEAN , GAMBETTA JAY MICHAEL , GUMANN PATRYK
Abstract: A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. The device further includes an electron system coupled to the resonator structure, and a gate positioned proximal to a portion of the electron system. The electron system and the gate are configured to interrupt the resonator structure at one or more predetermined locations forming a switch. The gate is configured to receive a gate voltage and vary an inductance of the electron system based upon the gate voltage. The varying of the inductance induces the resonator structure to vary a strength of coupling between the first device and the second device.
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公开(公告)号：AU2021417883A9
公开(公告)日：2025-03-13
申请号：AU2021417883
申请日：2021-12-30
Applicant: IBM
Inventor： GUMANN PATRYK , GRENDANIN VALERIO , HART SEAN , MCKAY DAVID , CHOW JERRY , ZARSKY DAVID , BAUER GILBERT
Abstract: A cryostat (100), comprising: a thermal shield (210) extending between a thermal stage (141) and a base structure (160) coupled to a bottom plate (116) of an outer vacuum chamber (110), the thermal stage (141) coupled to a top plate (114) of the outer vacuum chamber (110), the thermal shield (210) providing access to a sample mounting surface (430) encompassed within the thermal shield (210) from a region external to the outer vacuum chamber (110) via the top and bottom plates (114, 116) of the outer vacuum chamber (110).
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Patent Agency Ranking
公开(公告)号：AU2021290959A1
公开(公告)日：2022-11-10
申请号：AU2021290959
申请日：2021-06-15
Applicant: IBM
Inventor： GUMANN PATRYK , CROSS ANDREW , HART SEAN , GAMBETTA JAY
Abstract: A quantum system includes a qubit array comprising a plurality of qubits. A bus resonator is coupled between at least one pair of qubits in the qubit array. A switch is coupled between the at least one qubit pair of qubits.
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公开(公告)号：BR112021026226A2
公开(公告)日：2022-02-15
申请号：BR112021026226
申请日：2020-06-23
Applicant: IBM
Inventor： DANIELA FLORENTINA BOGORIN , ORCUTT JASON , NICHOLAS TORLEIV BRONN , GUMANN PATRYK , SALVATORE BERNARDO OLIVADESE , HART SEAN
Abstract: interpositor supercondutor para transdução ótica de informação quântica. um sistema para transdução ótica de informação quântica inclui um chip qubit incluindo uma pluralidade de qubits de dados configurada para operar em frequências de micro-ondas, e um chip de transdução separado do chip qubit, o chip de transdução incluindo um transdutor de frequência de micro-ondas para ótica. o sistema inclui um interpositor acoplado ao chip qubit e o chip de transdução, o interpositor incluindo um material dielétrico incluindo uma pluralidade de guias de onda de micro-ondas supercondutores formados na mesma. a pluralidade de guias de onda de micro-ondas supercondutores é configurada para transmitir informação quântica a partir da pluralidade de qubits de dados para o transdutor de frequência de micro- onda para ótica no chip de transdução e o transdutor de frequência de micro-onda para ótica é configurado para transduzir a informação quântica a partir das frequências de micro-ondas em frequências óticas.
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公开(公告)号：BR112021025694A2
公开(公告)日：2022-02-08
申请号：BR112021025694
申请日：2020-06-19
Applicant: IBM
Inventor： BERNARDO SALVATORE OLIVADESE , DANIELA FLORENTINA BOGORIN , CHOW JERRY , BRINK MARKUS , NICHOLAS TORLEIV BRONN , JINKA OBLESH , GUMANN PATRYK , HART SEAN
IPC: F25D19/00 , H01L23/367
Abstract: embalagem criogênica para termalização de dispositivos de temperatura baixa. uma estrutura de termalização é formada utilizando uma cobertura configurada com um conjunto de pilares, a cobertura sendo parte de um invólucro criogênico de um dispositivo de baixa temperatura (ltd). um chip incluindo o ltd é configurado com um conjunto de cavidades, uma cavidade no conjunto de cavidades tendo um perfil de cavidade. um pilar a partir do conjunto de pilares e correspondendo à cavidade tem um perfil de pilar de modo que o perfil de pilar faça com que o pilar acople com a cavidade do perfil de cavidade em uma tolerância de folga para termicamente acoplar o chip à cobertura para dissipação de calor em uma operação criogênica do chip.
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9.发明专利
公开(公告)号：IL288973D0
公开(公告)日：2022-02-01
申请号：IL28897321
申请日：2021-12-13
Applicant: IBM , BRONN NICHOLAS , BOGORIN DANIELA , GUMANN PATRYK , HART SEAN , OLIVADESE SALVATORE
Inventor： BRONN NICHOLAS , BOGORIN DANIELA , GUMANN PATRYK , HART SEAN , OLIVADESE SALVATORE
Abstract: A system for transmission of quantum information for quantum error correction includes an ancilla qubit chip including a plurality of ancilla qubits, and a data qubit chip spaced apart from the ancilla qubit chip, the data qubit chip including a plurality of data qubits. The system includes an interposer coupled to the ancilla qubit chip and the data qubit chip, the interposer including a dielectric material and a plurality of superconducting structures formed in the dielectric material. The superconducting structures enable transmission of quantum information between the plurality of data qubits on the data qubit chip and the plurality of ancilla qubits on the ancilla qubit chip via virtual photons for quantum error correction.
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公开(公告)号：SG11202109828YA
公开(公告)日：2021-10-28
申请号：SG11202109828Y
申请日：2020-03-19
Applicant: IBM
Inventor： HART SEAN , GUMANN PATRYK
IPC: G06N10/00
Abstract: A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. A gate is positioned proximal to a portion of the resonator structure. The gate is configured to receive a gate voltage and vary a kinetic inductance of the portion of the resonator based upon the gate voltage. The varying of the kinetic inductance induces the resonator structure to vary a strength of coupling between the first superconducting device and the second superconducting device.
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