公开(公告)号：DE10032412A1

公开(公告)日：2002-01-24

申请号：DE10032412

申请日：2000-07-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  HANEDER THOMAS PETER ,  HOENLEIN WOLFGANG ,  KREUPL FRANZ

IPC: B82B3/00 ,  G11C11/21 ,  G11C11/56 ,  G11C13/02 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/15 ,  H01L29/16 ,  H01L51/30 ,  H01L51/20

Abstract: Electronic storage element (600) comprises first nanotubes (601) and second nanotubes (603) arranged skew to each other or crossing each other so that an electrical coupling is produced between one part of the first tubes and one part of the second tubes. It is possible to decide whether the tubes are electrically coupled to each other or not at their crossing points (605). An Independent claim is also included for a process for the production of an electronic storage element. Preferred Features: The nanotubes are carbon nanotubes. A dielectric is arranged between the first and second nanotubes. A layer system made up of a first silicon dioxide layer, a silicon nitride layer and a second silicon dioxide layer is arranged between the first and second nanotubes.

公开(公告)号：DE59814458D1

公开(公告)日：2010-08-26

申请号：DE59814458

申请日：1998-08-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLOSE HELMUT ,  LEHMANN VOLKER ,  REISINGER HANS ,  HOENLEIN WOLFGANG

IPC: H01L27/04 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/822 ,  H01L21/8242

公开(公告)号：DE102004031128A1

公开(公告)日：2006-01-19

申请号：DE102004031128

申请日：2004-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINLESBERGER GERNOT ,  ENGELHARDT MANFRED ,  KREUPL FRANZ ,  HOENLEIN WOLFGANG

IPC: H01L21/768 ,  H01L23/532 ,  H01L51/10 ,  H01L51/30

公开(公告)号：DE50104250D1

公开(公告)日：2004-11-25

申请号：DE50104250

申请日：2001-12-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GOEBEL HOLGER ,  HOENIGSCHMID HEINZ ,  HOENLEIN WOLFGANG ,  HANEDER THOMAS ,  ULLMANN MARC

IPC: G11C11/22 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

Abstract: The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

公开(公告)号：DE10161312A1

公开(公告)日：2003-07-10

申请号：DE10161312

申请日：2001-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINHOEGL WERNER ,  KREUPL FRANZ ,  HOENLEIN WOLFGANG

IPC: H01L21/768 ,  H01L51/30

Abstract: An arrangement and process for producing a circuit arrangement is disclosed. The process includes having a layer arrangement, in which two electrically conductive interconnects running substantially parallel to one another are formed on a substrate. At least one auxiliary structure is formed on the substrate and between the two interconnects, running in a first direction, which first direction includes an angle of between 45 degrees and 90 degrees with a connecting axis of the interconnects, running orthogonally with respect to the two interconnects, the at least one auxiliary structure being produced from a material which allows the at least one auxiliary structure to be selectively removed from a dielectric layer. The dielectric layer is formed between the two interconnects, in such a manner that the at least one auxiliary structure is at least partially covered by the dielectric layer.

公开(公告)号：DE10126606A1

公开(公告)日：2002-12-19

申请号：DE10126606

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOENLEIN WOLFGANG

IPC: H02N1/00

Abstract: The arrangement has a plate arrangement subjected to electrostatic charging with at least two parallel flat plates (1,2) at a distance apart, one fixed and one movable, and a number of flexible hairs (4) attached to the fixed plate and aligned to protrude towards the movable plate with a defined preferred direction. The movable plate is moved with respect to the fixed plate by electrostatic attraction and its direction of motion can be determined by the direction of alignment of the elastic hairs when it comes into contact with them.

公开(公告)号：DE10103340A1

公开(公告)日：2002-08-22

申请号：DE10103340

申请日：2001-01-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KREUPL FRANZ ,  HOENLEIN WOLFGANG

IPC: C01B31/02 ,  C23C16/02 ,  C23C16/26 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  B82B3/00 ,  B81C3/00 ,  D01F9/14 ,  H01L51/30 ,  H01L51/40

公开(公告)号：DE10006964C2

公开(公告)日：2002-01-31

申请号：DE10006964

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOENLEIN WOLFGANG ,  ENGELHARDT MANFRED ,  KREUPL FRANZ

IPC: H01J9/02 ,  H01J1/304 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H05K3/40 ,  B82B3/00 ,  B82B1/00

Abstract: The invention provides in a preferred embodiment an electronic component comprising a first conductive layer, a non-conductive layer and a second conductive layer. A hole is etched through the non-conductive layer. A nanotube, which is provided in said hole, links the first conductive layer to the second conductive layer in a conductive manner.