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    22.
    发明专利
    未知

    公开(公告)号：DE10041698A1

    公开(公告)日：2002-03-14

    申请号：DE10041698

    申请日：2000-08-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KERSCH ALFRED ,  SPITZER ANDREAS

    IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  C30B25/02 ,  H01L21/205 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8239

    Abstract: Production of a crystalline solid body layer on a substrate (3) by CVD comprises introducing an auxiliary material (H) into the reaction chamber in addition to the starting gases (P) containing the elements of the solid body layer. The auxiliary material is obtained in such a way that it contains molecules which have a dipole moment and the properties to deposit during the deposition process over a short time on the substrate surface to form the crystal structure of the solid body layer. Preferred Features: The auxiliary material is introduced from an external supply such as a supply vessel. The auxiliary material consists of reaction products of the CVD process pumped from the reaction chamber.

    23.
    发明专利
    未知

    公开(公告)号：DE102006023046A1

    公开(公告)日：2007-11-22

    申请号：DE102006023046

    申请日：2006-05-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KERSCH ALFRED ,  LINK ANGELA ,  SUNDQVIST JONAS ,  ERBEN ELKE

    IPC: C23C16/448 ,  C23C16/455

    Abstract: A method and apparatus for providing a gaseous precursor for a coating process. A starting material having a pulverulent precursor material is heated in order to cause a vaporization of the pulverulent precursor material, whereby a gaseous precursor is produced. A carrier gas is flowed past the starting material at a distance minimizing or preventing a convective gas flow, while transporting the gaseous precursor to a processing region containing a wafer to be coated.

    24.
    发明专利
    未知

    公开(公告)号：DE10249207B4

    公开(公告)日：2006-04-06

    申请号：DE10249207

    申请日：2002-10-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KERSCH ALFRED ,  RABERG WOLFGANG ,  SCHWARZL SIEGFRIED

    IPC: H01L27/22 ,  B81C1/00 ,  G11C11/15 ,  H01F41/30 ,  H01F41/34

    Abstract: An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (alpha) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).

    26.
    发明专利
    未知

    公开(公告)号：DE10232179A1

    公开(公告)日：2004-02-05

    申请号：DE10232179

    申请日：2002-07-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SABISCH WINFRIED ,  KERSCH ALFRED ,  SCHULZE-ICKING GEORG ,  WITKE THOMAS ,  ZEDLITZ RALF

    IPC: C23C14/35 ,  H01J37/34

    Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

    27.
    发明专利
    未知

    公开(公告)号：DE10131709A1

    公开(公告)日：2003-01-30

    申请号：DE10131709

    申请日：2001-06-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： GOEBEL BERND ,  STEINHOEGL WERNER ,  KERSCH ALFRED ,  GUTSCHE MARTIN

    IPC: H01L21/3213 ,  H01L21/8242

    Abstract: Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.

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