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公开(公告)号:DE10316579A1
公开(公告)日:2004-11-04
申请号:DE10316579
申请日:2003-04-10
Applicant: INFINEON TECHNOLOGIES AG
Inventor: GNAT MARCIN , SCHNEIDER RALF , VOLLRATH JOERG
IPC: G11C7/10 , H03K19/00 , H03K19/0175
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公开(公告)号:DE10302650A1
公开(公告)日:2004-08-12
申请号:DE10302650
申请日:2003-01-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PROELL MANFRED , SCHROEDER STEPHAN , SCHNEIDER RALF , KLIEWER JOERG
IPC: G11C7/12 , G11C7/18 , G11C11/4094 , G11C11/4097 , G11C11/4091
Abstract: RAM memory with shared SA structure, wherein a short circuit transistor (30) is connected, for all bit transfer line pairs connected to a sense amplifier (SA), to the sense amplifier and can be separately switched for each individual control line (9) using a short circuit control signal. An independent claim is made for a control method for a RAM memory with shared SA structure.
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公开(公告)号:DE10131277A1
公开(公告)日:2003-01-16
申请号:DE10131277
申请日:2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNEIDER RALF , WIRTH NORBERT , STAVROU EVANGELOS , HARTNER TOBIAS
Abstract: A process for address coding a semiconductor memory device comprises forming the device with a memory cell field with physical and electrical X:Y addresses. A physical address of a given cell is placed in an address installing device and decoded in an address decoding device (18) in its decoding mode. An Independent claim is also included for a semiconductor device for the above process.
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公开(公告)号:DE10059553A1
公开(公告)日:2002-06-27
申请号:DE10059553
申请日:2000-11-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNEIDER RALF , WIRTH NORBERT , BENZINGER HERBERT
Abstract: A circuit configuration and a method for the synchronization of signals include transmitting signals in parallel through data lines and buffer-storing the signals in a synchronizing unit. A clock signal is determined from the signals of a data line and is used for synchronizing the outputting of the signals. The signals are output in the order in which the signals were read. The signals are likewise output through a plurality of data lines, the signals being output temporally synchronously. Propagation time differences are compensated due to the buffer-storage. Moreover, the clock signal is determined from the signals themselves. Consequently, the use of an additional clock signal is not necessary.
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公开(公告)号:DE102004015269B4
公开(公告)日:2008-03-27
申请号:DE102004015269
申请日:2004-03-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: VOLLRATH JOERG , GNAT MARCIN , SCHNEIDER RALF , CAMPENHAUSEN AUREL VON
IPC: G11C29/00 , G01R19/165 , G11C5/14 , G11C11/4074 , G11C29/48 , G11C29/50 , H02H3/00
Abstract: An integrated circuit includes a current generator circuit with a first input terminal for applying a reference voltage and a second input terminal for applying an input voltage, which is generated internally from an externally applied supply voltage by a voltage generator circuit. The current generator circuit is connected to an output terminal via an interconnect. A first current flows on the interconnect in a test operating state of the integrated circuit. The current generator circuit generates a first partial current in a first test cycle of a test operating state and a second partial current in a subsequent second test cycle. The partial currents are each superposed on the first current on the interconnect. Consequently, three currents occur at the output terminal during the test operating state. The internally generated input voltage of the current generator circuit is determined from the three currents and the reference voltage.
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公开(公告)号:DE10302650B4
公开(公告)日:2007-08-30
申请号:DE10302650
申请日:2003-01-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PROELL MANFRED , SCHROEDER STEPHAN , SCHNEIDER RALF , KLIEWER JOERG
IPC: G11C11/4091 , G11C7/12 , G11C7/18 , G11C11/4094 , G11C11/4097
Abstract: RAM memory with shared SA structure, wherein a short circuit transistor (30) is connected, for all bit transfer line pairs connected to a sense amplifier (SA), to the sense amplifier and can be separately switched for each individual control line (9) using a short circuit control signal. An independent claim is made for a control method for a RAM memory with shared SA structure.
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公开(公告)号:DE10358038B4
公开(公告)日:2006-05-18
申请号:DE10358038
申请日:2003-12-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNEIDER RALF , SCHROEDER STEPHAN , PROELL MANFRED , AUGE JUERGEN
IPC: G11C11/407 , G11C7/00 , G11C16/04 , G11C29/44
Abstract: An integrated circuit includes a programming circuit ( 10 ) for generating programming signals (PS 1 , . . . , PS 4 ) with a first input terminal (E 1 ) for applying a control voltage (ES), a second input terminal (E 2 ) for applying a reference voltage (Vref), a storage circuit ( 30 ) with programmable switches ( 35, . . . , 38 ) and output terminals (A 1 , . . . , A 4 ). The programming circuit in each case generates a programming signal (PS 1 , . . . , PS 4 ) when the control voltage (ES) exceeds a predefined threshold voltage formed from the reference voltage. The number of programming signals (PS 1 , . . . , PS 4 ) is dependent on the magnitude of the threshold voltage exceeded by the control voltage (ES). The programming signals are used for programming the programmable switches ( 35, . . . , 38 ). The programming state of the programmable switches can be read out via the output terminals (A 1 , . . . , A 4 ) of the integrated circuit. The integrated circuit enables the storage of external operating parameters of the integrated circuit.
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公开(公告)号:DE10312497A1
公开(公告)日:2004-10-07
申请号:DE10312497
申请日:2003-03-17
Applicant: INFINEON TECHNOLOGIES AG
Inventor: EGGERS GEORG , SCHNEIDER RALF
Abstract: The device (1) provides a synchronization signal of given frequency by selection of the impedance of at least one resonator device (8) within a resonance circuit (17) coupled to a driver device (7) providing the synchronization signal, such that the resonance frequency corresponds to the required synchronization signal frequency. An independent claim for a synchronization clock signal generation method is also included.
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公开(公告)号:DE10255834A1
公开(公告)日:2004-06-17
申请号:DE10255834
申请日:2002-11-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: PROELL MANFRED , SCHROEDER STEPHAN , SCHNEIDER RALF , KLIEWER JOERG
IPC: G11C7/06 , G11C7/12 , G11C7/18 , G11C11/4091 , G11C11/4094 , G11C11/4097 , G11C7/00 , G11C11/407
Abstract: The integrated semiconducting memory has at least one read amplifier (SA) and at least one pair of bit lines (BL) consisting of n segment bit line pairs (SBL) that can be electrically connected to the read amplifier separately from each other, where n is a natural number greater than 1. Each segment bit line pair can be electrically connected to the read amplifier by a switching arrangement (SW1-SW3).
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公开(公告)号:DE10161049C2
公开(公告)日:2003-10-23
申请号:DE10161049
申请日:2001-12-12
Applicant: INFINEON TECHNOLOGIES AG
Inventor: SCHNEIDER RALF , BUCKSCH THORSTEN
IPC: G01R31/30 , G01R31/3187 , G01R31/3193 , H01L21/66 , G06F11/26
Abstract: An integrated test circuit, as part of an integrated circuit, includes phase-shifted test signals fed through inputs A and B. These test signals are conducted through a plurality of cascaded delay elements, the advancing of the first test signal through the delay elements being held and evaluated by the second test signal.
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