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    Use of poly-o-hydroxyamide polymers for adhesive bonding, especially for bonding chips and-or wafers, e.g. silicon wafers with titanium nitride-coated silicon chips
    21.
    发明专利
    Use of poly-o-hydroxyamide polymers for adhesive bonding, especially for bonding chips and-or wafers, e.g. silicon wafers with titanium nitride-coated silicon chips 未知

    公开(公告)号：DE10137376A1

    公开(公告)日：2003-02-27

    申请号：DE10137376

    申请日：2001-07-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA

    IPC: C08G69/26 ,  C08G69/32 ,  C08L77/00 ,  C09J5/00 ,  C09J5/06 ,  C09J177/00 ,  C09J177/06 ,  C09J177/10 ,  C09J179/00 ,  C09J5/04 ,  C09J179/08 ,  H01L21/58

    Abstract: Poly-o-hydroxyamides used for adhesive bonding. The use of poly-o-hydroxyamides (PHA) of formula (I) for adhesive bonding. a, d = 0 or 1; b, c = 0-100; X = H, optionally substituted alkylcarbonyl, alkenylcarbonyl, cycloalkenylcarbonyl, arylcarbonyl, aralkylcarbonyl, aralkenylcarbonyl, aralkynylcarbonyl or heterocycloalkylcarbonyl (if a or d = 0), or hydroxy, optionally substituted alkoxy, alkenoxy, aryloxy, cycloalkenoxy, amino, alkylamino, alkenylamino, arylamino, arylalkenoxy or arylalkylamino (if a or d = 1); Y1-Y4 = arylene, polynuclear aromatic hydrocarbylene, a condensed ring system, alkylene, alkenylene, alkynylene, aralkylene, aralkenylene, aralkynylene, heterocyclo- or cyclo-alkylene (all optionally substituted); Z1-Z3 = aryl, aralkyl, aralkenyl, aralkynyl, heteroaryl, polynuclear aromatic hydrocarbon groups or condensed ring systems (all optionally substituted) . Independent claims are also included for (1) (1) a method for bonding materials or components by coating the surface(s) with (I), bringing the joint halves together, crosslinking (I) and possibly heating to convert (I) into the corresponding polybenzoxazole (2) (2) objects or components with at least two parts bonded together with (I) by this method (3) (3) adhesive compositions containing 10-45 wt% (I), 55-90 wt% organic solvent and possibly 0.1-10 wt% crosslinker.

    Verfahren zum Herstellen einer integrierten Schaltung mit einer Mehrzahl von Widerstandsänderungsspeicherzellen
    23.
    发明专利
    Verfahren zum Herstellen einer integrierten Schaltung mit einer Mehrzahl von Widerstandsänderungsspeicherzellen 未知

    公开(公告)号：DE102008025473B4

    公开(公告)日：2015-10-15

    申请号：DE102008025473

    申请日：2008-05-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HAPP THOMAS ,  KASKO IGOR ,  WALTER ANDREAS

    IPC: H01L45/00 ,  H01L27/24

    Abstract: Verfahren zum Herstellen einer integrierten Schaltung mit einer Mehrzahl von Widerstandsänderungsspeicherzellen, wobei das Verfahren aufweist: – Ausbilden eines Halbleitersubstrats; – Ausbilden einer Isolationsschicht auf dem Halbleitersubstrat; – Ausbilden eines Grabens innerhalb der Isolationsschicht; – Einführen von Dotiermaterial eines ersten Leitungstyps durch den Graben in das Halbleitersubstrat, wodurch ein erstes Halbleitergebiet gebildet wird; – Füllen des Grabens mit einem Füllmaterial; – Ausbilden eines Kontaktloches innerhalb der Isolationsschicht benachbart zu dem Graben; – Einführen von Dotiermaterial eines zweiten Leitungstyps durch das Kontaktloch in das Halbleitersubstrat, wodurch ein zweites Halbleitergebiet gebildet wird, das zusammen mit dem ersten Halbleitergebiet eine Diode mit einem pn-Übergang ausbildet, wobei der pn-Übergang ein laterales pn-Übergangsgebiet bildet; – Entfernen des Füllmaterials; – Füllen des Grabens und des Kontaktloches mit leitendem Material, wodurch in dem Graben eine Wortleitung auf dem Halbleitersubstrat, und in dem Kontaktloch ein leitendes Verbindungselement gebildet wird; – Ausbilden eines Speicherelementes oberhalb des Halbleitersubstrats derart, dass das Speicherelement über das leitende Verbindungselement mit dem zweiten Halbleitergebiet verbunden ist.

    24.
    发明专利
    未知

    公开(公告)号：DE502004009020D1

    公开(公告)日：2009-04-02

    申请号：DE502004009020

    申请日：2004-08-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER ,  WALTER ANDREAS ,  ZSCHIESCHANG UTE

    IPC: H01L51/10 ,  G03F1/90 ,  H01B3/18 ,  H01B3/44 ,  H01L51/05

    Abstract: An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

    26.
    发明专利
    未知

    公开(公告)号：DE50308900D1

    公开(公告)日：2008-02-14

    申请号：DE50308900

    申请日：2003-05-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  GNUECHTEL INGO ,  MALTENBERGER ANNA ,  SEZI RECAI ,  HARTMANN HORST

    IPC: C07C215/82 ,  C07C217/90 ,  C07B61/00 ,  C07C213/02 ,  C07C215/80

    Abstract: Bis-aminophenols are new. Bis-aminophenols of formula (I) are new. G = oxgyen or sulfur; M = formula (II)-(IX); R1, R2 = phenyl, -(CH2)nCH3, -G-(CH2)nCH3, -C(CH3)3, -GC(CH3)3, -(CF2)nCF3, -G-(CF2)nCF3, -G-CH(CH3)2, -CH(CH3)2, -CF(CF3)2, -C(CF3)3, -N(CH3)2, -N(CF3)2, -C(R1)(R2)-, -C(O)-, -O-, -S- or -N(R1)-; n = 0-5. An Independent claim is included for a process for the preparation of bis-aminophenols (I) by reaction of a diol (II) to form a nitroso compound followed by reduction to form the bis-aminophenol (I).

    28.
    发明专利
    未知

    公开(公告)号：DE10136382B4

    公开(公告)日：2006-05-24

    申请号：DE10136382

    申请日：2001-07-26

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  SEZI RECAI

    IPC: C08G73/22 ,  C09J179/06 ,  H01B3/30 ,  H01B3/42 ,  H01L21/312

    Abstract: The following invention relates to phenyl-linked polybenzoxazoles having terminal, aryl- or heteroaryl-attached cyanate groups which can be used for adhesive bonding and as dielectrics, especially for electronic components, and to a process for preparing them.

    29.
    发明专利
    未知

    公开(公告)号：DE50300404D1

    公开(公告)日：2005-05-04

    申请号：DE50300404

    申请日：2003-06-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEZI RECAI ,  WALTER ANDREAS ,  MALTENBERGER ANNA ,  LOWACK KLAUS ,  HALIK MARCUS

    IPC: C08G73/02 ,  C08G69/26 ,  C08G69/32 ,  C08G73/22 ,  H01B3/30

    Abstract: Poly-o-hydroxyamides with divalent polynuclear (hetero)aromatic residues in the polymer chain. Poly-o-hydroxyamides of formula (I), in which M1 = -CO-Y3-CO-; M2 = -NHZ2(OR1)2NH-COY3CO-; M3-M5 = -NHZ1(OR1)2NH-COY2CO-, -X1COY4CO- or -X2COY5CO-; M6 = -NHZ3(OR1)2NH-; Z1-Z3 = various tetravalent (hetero)aromatic groups, based e.g. on -Phe-C(Ph)2)-Phe-, -Phe-O-Ada-O-Phe- (for Z2; 8 groups listed) or on benzene (1,2,4,5), naphthalene (2,3,6,7 or 1,2,5,6), furan-tetrayl etc. (for Z1 and Z3; 11 groups listed); Y1-Y5 = various divalent (hetero)aromatic or other groups based e.g. on benzene, naphthalene, pyrazine, furan, pyridine, biquinolyl, norbornene etc. (21 groups listed); X1, X2 = various ester, carbonate, ether, ketone or amide groups; A = (a) H, -CO(CH2)kCH3, -COCH=CH2, -CO-aryl etc. (if a = 0 and/or f = 1; 14 groups listed) or (b) OH, amino, -OCH2CH=CH2, aryloxy etc. (if a = 1 and/or f = 0; 9 groups listed); R1 = H, -(CH2)iCH3, -(CH2)iPh, -COO(CH2)iCH3 or -COO(CH2)iPh; Ph = phenyl; Phe = phenylene; Ada = adamantylene; a, f = 0 or 1; b = 1-200; c = 0-200; d, e = 0-50; i = 0-10 . Full definitions are given in the DEFINITIONS (Full Definitions) field. Independent claims are also included for (1) (1) polybenzoxazoles (PBO) obtained from (I) (2) (2) a method (M1) for the production of (I) by reacting monomers of formula H2N-Z(OR1)2-NH2 (II) with dicarboxylic acids or activated derivatives thereof of formula L-CO-Y-CO-L (III) (3) (3) a method (M2) for the production of PBO by heating (I) (4) (4) electronic components (EC) with a dielectric containing PBO as above (5) (5) a method (M3) for the production of EC by coating a substrate with a solution of (I), evaporating the solvent, heating the resulting film to form PBO, structuring the PBO film to form a resist with trenches, depositing a conductive material on the relief so as to fill the trenches and then removing excess conductive material (6) (6) a method (M4) for the production of EC by coating a solution of (I) onto a substrate with trenches between metallic surface structures, evaporating the solvent so that the trenches are filled with (I) and then heating to form PBO . Z = Z1, Z2 or Z3; Y = Y1-Y5; L = OH or an activating group .

    30.
    发明专利
    未知

    公开(公告)号：DE10147927B8

    公开(公告)日：2004-07-08

    申请号：DE10147927

    申请日：2001-09-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WALTER ANDREAS ,  SEZI RECAI ,  LOWACK KLAUS ,  MALTENBERGER ANNA

    IPC: C08G73/00 ,  C08G73/10 ,  C09D5/25 ,  H01B3/30 ,  H01L21/312 ,  H01L23/532 ,  C08G73/22

    Abstract: Poly-o-hydroxyamides are cyclicized to obtain polybenzoxazoles. The poly-o-hydroxyamides provide effective filling of trenches. In particular, the poly-o-hydroxyamides can fill trenches having a width of less than 100 nm and an aspect ratio of more than 4. Further, the polybenzoxazoles of the invention are very suitable for the damascene process. A dielectric can be made from the polybenzoxazole. In turn, semiconductor devices can include the dieletric. Processes for making the poly-o-hydroxyamides, polybenzoxazoles, and semiconductor devices are included.

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