公开(公告)号：DE10255117A1

公开(公告)日：2004-06-17

申请号：DE10255117

申请日：2002-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MIKOLAJICK THOMAS ,  WERNER WOLFGANG ,  KLOSE HELMUT

IPC: H01L27/24 ,  H01L45/00 ,  H01L27/112 ,  H01L21/8246

Abstract: A semiconductor memory device with a phase transformation memory effect includes at least one memory element in a semiconductor substrate, and a cavity arrangement including at least one cavity in spatial proximity to the respective memory element. The cavity is in spatial arrangement with the respective memory element so as to reduce thermal coupling of the respective memory element to the areas surrounding the memory element, which also reduces the thermal conductivity between memory element and the areas surrounding the memory element.

公开(公告)号：DE10232642A1

公开(公告)日：2004-02-12

申请号：DE10232642

申请日：2002-07-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRZALKOWSKI BERNHARD ,  KAHLMANN FRANK ,  WERNER WOLFGANG

IPC: H01F17/00 ,  H01L27/08

Abstract: An integrated transformer for signal transmission comprises a long coil of rectangular cross-section which is electrically isolated from, but adjacent to, a second coil. The ratio between the height and width of the rectangular coil is greater than unity and preferably. more than three.

公开(公告)号：DE10129348A1

公开(公告)日：2003-01-09

申请号：DE10129348

申请日：2001-06-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  HIRLER FRANZ

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: Device has two connectors of either conductor type contactable on either side of a semiconducting body, a drift zone bounding the first zone extending vertically to the second side, a body zone of a second type and a control electrode isolated from the body and is arranged in the semiconducting body lateral direction almost without overlapping the drift and second connection zones. The device has a first connection zone (112) of one conductor type contactable on one side of a semiconducting body (100), a second zone (132A) of this type contactable on the other side of the body, a drift zone (114A,114B) bounding on the first zone extending vertically to the second side, a body zone (122,124) of a second type and a control electrode isolated with respect to the body. The control electrode (142A,B) is arranged in the lateral direction of the semiconducting body almost without overlapping the drift zone and second connection zone. AN Independent claim is also included for the following: a method of manufacturing a semiconducting component.

公开(公告)号：DE19750131C2

公开(公告)日：2002-06-13

申请号：DE19750131

申请日：1997-11-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  TIMME HANS-JOERG

IPC: G01L13/00 ,  G01L9/00 ,  G01L9/12 ,  G01L13/06 ,  H01L49/00 ,  G01L15/00

Abstract: A micromechanical differential pressure sensor device for measuring a pressure difference between two mutually separated spaces or media, in which two absolute pressure measuring devices are monolithically integrated on a single support substrate, in particular on a semiconductor chip. The absolute pressure measuring devices are preferably fabricated by surface micromachining.

公开(公告)号：DE10026925C2

公开(公告)日：2002-04-18

申请号：DE10026925

申请日：2000-05-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG

IPC: H01L29/08 ,  H01L29/10 ,  H01L29/45 ,  H01L29/739 ,  H01L29/78

Abstract: The field effect semiconductor has a semiconductor body (1) provided with at least one inner zone (2) of one conductivity type, incorporating at least one base zone (4) of opposite conductivity type at the surface (3) of the semiconductor body, in turn incorporating a source zone (5) with the same conductivity as the inner zone. A further base zone (15) is separated from the first base zone by an intermediate zone (16) with the same conductivity as the inner zone. A source contact zone (17) provides a low-ohmic connection between the source zone, the base zone and the further base zone.

公开(公告)号：DE10040452A1

公开(公告)日：2002-03-07

申请号：DE10040452

申请日：2000-08-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/78

Abstract: Auxiliary electrode regions (15) are provided in drain zones (6) of the device, to extract charge carriers from the drain zones when the semiconductor device is blocking. The auxiliary electrode terminal (H) and the source electrode (S) preferably have the same potential.

公开(公告)号：DE10038177A1

公开(公告)日：2002-02-21

申请号：DE10038177

申请日：2000-08-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  HIRLER FRANZ ,  TIHANYI JENOE

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78 ,  H01L21/336

Abstract: The invention relates to a semiconductor device which can be controlled by means of a field effect. Said device contains a semiconductor body (100) comprising a doped first and second contact area (20, 22, 24, 30) to which connecting electrodes (90, 92) for applying power supply potential are connected. A first control electrode (40, 42, 44; 48, 49) is insulated in relation to the semiconductor body (100; 200) and can be connected to a first control potential. A second control electrode (60, 62, 64; 66, 68; 67, 69; 61, 63) is arranged adjacently in relation to the first control electrode (40, 42, 44; 48, 49). Said second control electrode is arranged in the semiconductor body in an insulated manner and can be connected to a second control potential.

公开(公告)号：DE10014660A1

公开(公告)日：2001-10-11

申请号：DE10014660

申请日：2000-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  HIRLER FRANZ

IPC: H01L21/764 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/51 ,  H01L29/78

Abstract: The semiconducting arrangement has at least two rigid electrodes (6) that are electrically separated by an insulating arrangement consisting of at least one insulating or holding coating and/or a pn junction. The insulating arrangement also contains at least one hollow vol. (7).

公开(公告)号：DE10012610A1

公开(公告)日：2001-09-27

申请号：DE10012610

申请日：2000-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  AHLERS DIRK

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L29/808

Abstract: The device has a semiconductor substrate of a first conductivity type, on which a more lightly doped semiconductor layer of an opposite, second conductivity type or of the first conductivity type is arranged in the form of a drift segment (1) for taking up the blocking voltage of the semiconductor device. In the drift segment, laterally aligned semiconductor regions (3,4;3'4') of first and second conductivity type are alternately arranged. The semiconductor regions (3,3') of the first conductivity type are connected to the semiconductor substrate, on which a first electrode (D;S) is arranged, by an electrically conductive connection (5,5') fed through the semiconductor layer (2,2'). The semiconductor regions (4,4') of the second conductivity type are connected to a second electrode (S,D) on the semiconductor layer by a further conductive connection (6,6') fed through the semiconductor regions (3,4;3',4').

公开(公告)号：DE10007416C1

公开(公告)日：2001-06-21

申请号：DE10007416

申请日：2000-02-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  PFIRSCH FRANK ,  KASCHANI KARIM-THOMAS TAGHIZAD

IPC: H01L27/07 ,  H02M3/00 ,  H01L29/78 ,  H01L29/872 ,  H02M7/48

Abstract: A controlled semiconductor arrangement of a MOS-field-effect transistor (T), a diode (D) and a Schottky diode (SD), in which the source or drain of the MOSFET (T) are connected to the anode of the Schottky diode (SD). The bulk-zone of the MOSFET (T) is connected via the anode contact (8) of the diode (D) to the drain (5;4) or source (4;5) of the MOSFET (T), the latter being specifically a n-channel MOS- FET (T), and the diode a pn n-diode structure.