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    Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
    22.
    发明专利
    Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support 未知

    公开(公告)号：AU3216597A

    公开(公告)日：1998-01-05

    申请号：AU3216597

    申请日：1997-06-02

    Applicant: LAM RES CORP

    Inventor： BENJAMIN NEIL ,  HYLBERT JON ,  MANGANO STEFANO

    IPC: H01L21/302 ,  H01J37/16 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/677

    Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION
    23.
    发明专利
    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION 未知

    公开(公告)号：SG10201609601XA

    公开(公告)日：2016-12-29

    申请号：SG10201609601X

    申请日：2005-12-01

    Applicant: LAM RES CORP

    Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

    IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

    ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON-UNIFORMITY IN PLASMA
    24.
    发明专利
    ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON-UNIFORMITY IN PLASMA 未知

    公开(公告)号：SG10201510350WA

    公开(公告)日：2016-01-28

    申请号：SG10201510350W

    申请日：2008-06-25

    Applicant: LAM RES CORP

    Inventor： BENJAMIN NEIL

    Abstract: An arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber.

    26.
    发明专利
    未知

    公开(公告)号：DE69736977T2

    公开(公告)日：2007-09-13

    申请号：DE69736977

    申请日：1997-06-02

    Applicant: LAM RES CORP

    Inventor： BENJAMIN NEIL ,  HYLBERT JON ,  MANGANO STEFANO

    IPC: H01L21/00 ,  H01L21/302 ,  H01J37/20 ,  H01L21/285 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/677

    Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

    PLASMA PROCESSOR FOR LARGE WORKPIECES
    28.
    发明专利
    PLASMA PROCESSOR FOR LARGE WORKPIECES 未知

    公开(公告)号：CA2523264A1

    公开(公告)日：1996-06-13

    申请号：CA2523264

    申请日：1995-12-05

    Applicant: LAM RES CORP

    Inventor： VELTROP ROBERT ,  BARNES MICHAEL ,  BEER RICHARD ,  BENJAMIN NEIL ,  HOLLAND JOHN

    IPC: H05H1/46

    Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION
    29.
    发明专利
    METHOD AND APPARATUS FOR CONTROLLING SPATIAL TEMPERATURE DISTRIBUTION 未知

    公开(公告)号：SG10201408008QA

    公开(公告)日：2015-01-29

    申请号：SG10201408008Q

    申请日：2005-12-01

    Applicant: LAM RES CORP

    Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

    IPC: C23F4/00 ,  H01L21/683 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065

    Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

    METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLEDAND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM
    30.
    发明专利
    METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLEDAND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM 未知

    公开(公告)号：SG184777A1

    公开(公告)日：2012-10-30

    申请号：SG2012070926

    申请日：2008-09-29

    Applicant: LAM RES CORP

    Inventor： MARAKHTANOV ALEXEI ,  BENJAMIN NEIL ,  HUDSON ERIC ,  DHINDSA RAJINDER

    Abstract: METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY COUPLED AND AN INDUCTIVELYCOUPLED PLASMA PROCESSINC SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.Fig. 3A

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