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    22.
    发明专利
    未知

    公开(公告)号：DE102006045704A1

    公开(公告)日：2008-04-03

    申请号：DE102006045704

    申请日：2006-09-27

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： KRAEUTER GERTRUD

    IPC: G02B1/04 ,  G02B1/10 ,  H01L31/0232 ,  H01L33/58 ,  H01L33/60

    Abstract: The element has an optics body (2), which contains a plastic material such as thermoplastic material, where the optics body is encased completely by a protection layer (3), which contains silicon oxide. The protection layer exhibits a thickness, which is smaller than wavelength of electromagnetic radiation to which optical influence of the optics body is provided. The protection layer is provided as a diffusion barrier against penetration of humidity into the optics body. An independent claim is also included for an optoelectronic component with the optical element.

    23.
    发明专利
    未知

    公开(公告)号：DE102005047152A1

    公开(公告)日：2007-04-12

    申请号：DE102005047152

    申请日：2005-09-30

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： PLOESL ANDREAS ,  KRAEUTER GERTRUD ,  BUTENDEICH RAINER

    IPC: H01L33/00 ,  H01L33/04 ,  H01L33/12

    Abstract: The substrate has a sacrificial layer (32) attached on a wafer substrate, where a band gap of the sacrificial layer is smaller than a band gap of a gallium arsenide. An epitaxial layer (33) has a band gap that is larger than the band gap of the sacrificial layer. The sacrificial layer contains germanium, gallium arsenide nitride, gallium arsenide antimonide and indium gallium arsenide. The sacrificial layer has a super lattice structure, which is arranged at a lattice structure of wafers. A lattice adjustment layer (35b) is located between the sacrificial layer and epitaxial layer. Independent claims are also included for the following: (1) an LED-thin film chip, which is manufactured by an epitaxial substrate; (2) a method for manufacturing an epitaxial substrate; and (3) a method for manufacturing a light emitting diode thin film chip.

    24.
    发明专利
    未知

    公开(公告)号：DE102004060358A1

    公开(公告)日：2006-04-13

    申请号：DE102004060358

    申请日：2004-12-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： WAITL GUENTER ,  KRAEUTER GERTRUD ,  HAHN BERTHOLD ,  BRUNNER HERBERT ,  HAERLE VOLKER ,  JAEGER HARALD ,  EISSLER DIETER

    IPC: H01L33/50

    Abstract: The invention relates to a method of making LED chips provided with a luminescence conversion material containing at least one phosphor. In the method, a layer composite is prepared that includes an LED layer sequence for a multiplicity of LED chips and comprises on a main surface at least one electrical contact surface for each LED chip, for electrically connecting said chip. A layer of adhesion promoter is applied to the main surface and selectively removed from at least portions of the contact surfaces. At least one phosphor is then applied to the main surface. Alternatively, a luminescence conversion material is applied to the main surface and selectively removed from at least portions of the contact surfaces. The invention also relates to an LED chip provided with a luminescence conversion material.

    25.
    发明专利
    未知

    公开(公告)号：DE10112542A1

    公开(公告)日：2002-10-02

    申请号：DE10112542

    申请日：2001-03-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： KRAEUTER GERTRUD ,  PLOESL ANDREAS ,  JACOB ULRICH

    IPC: H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/54 ,  H01L33/00 ,  H01S5/026

    Abstract: The invention relates to a radiation-emitting semiconductor component comprising a layered structure (30) containing an active layer (32) which, when in operation, emits radiation of a spectral distribution (60), and electrical contacts (36,38,40) for impressing a current in the layered structure (30). Said component comprises an anti-reflection coating (44) which at least partially surrounds the active layer (32) and retains a short-wave part of the emitted radiation (60).

    OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
    26.
    发明申请
    OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
    光电子器件及其生产方法

    公开(公告)号：WO2011113720A3

    公开(公告)日：2011-11-10

    申请号：PCT/EP2011053381

    申请日：2011-03-07

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KRAEUTER GERTRUD

    Inventor： KRAEUTER GERTRUD

    IPC: H01L23/06 ,  H01L33/48

    CPC classification number: H01L33/60 ,  H01L23/06 ,  H01L33/486 ,  H01L33/56 ,  H01L51/5237 ,  H01L51/5271 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014

    Abstract: The invention relates to an optoelectronic component comprising a housing (1) having a duroplast, a recess (2) in the housing (1), a radiation-emitting component (3) arranged in the recess (2), wherein the duroplast comprises a material that is selected from: aminoplast-duroplast, urea duroplast, melamine formaldehyde duroplast, moist polyester duroplasts, bulk molded compounds, polyester resin, phenol resin, vinylester resin, and wherein the optoelectronic component has an injection point (4).

    Abstract translation: 的光电元件，其包括壳体（1），包括热固性塑料，凹部（2）在所述壳体（1），发射辐射的元件（3），其被布置在凹部（2），其中，所述热固性树脂包含选自以下的材料 ：具有氨基塑料热固性塑料，脲热固性三聚氰胺 - 甲醛热固性塑料，湿润聚酯热固性材料，块状成形体的化合物，聚酯树脂，酚醛树脂，Vinylesterharz，并且其中该光电子部件是注射点（4）。

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    27.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开
    光电半导体器件

    公开(公告)号：WO2010145893A2

    公开(公告)日：2010-12-23

    申请号：PCT/EP2010056602

    申请日：2010-05-12

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KRAEUTER GERTRUD

    Inventor： KRAEUTER GERTRUD

    IPC: H01L33/44 ,  H01L33/56

    CPC classification number: H01L33/44 ,  H01L33/56

    Abstract: In at least one embodiment of the optoelectronic semiconductor component (1), the latter has a housing base (2) and at least one semiconductor chip (3), which is attached to the housing base (2). In operation, the optoelectronic semiconductor chip (3) emits primary radiation, the primary radiation having a proportion of ultraviolet radiation. Furthermore, the semiconductor component (1) comprises a filter means (4), which is equipped to absorb the ultraviolet proportion of the primary radiation, wherein the filter means (14) is at least partly located between the semiconductor chip (3) and the housing base (2) and/or between the semiconductor chip (3) and an optical component (7). The proportion of ultraviolet radiation, in reference to a total optical output of the primary radiation, is between 0.1% and 4.0% inclusive.

    Abstract translation: 在光电子半导体器件（1）中的至少一个实施例具有本体（2）和至少一个光电子半导体芯片的壳体基座（3），其被附接至壳体基体（2）。 在光电子半导体芯片的操作步骤（3）发射的初级辐射，其中具有紫外线分量的初级辐射。 此外，半导体器件（1）包括适于吸收初级辐射的紫外线成分的过滤器装置（4），其中所述过滤装置（4）至少在所述半导体芯片之间的部分（3）和壳体基体（2）和/ 或者是将半导体芯片（3）和光学部件（7）之间。 紫外线照射部件，基于所述初级辐射的总光功率，是0.1％和4.0％之间。

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